Performance study of a 248 GHz voltage controlled hetero-integrated source in InP-on-BiCMOS technology
Maruf Hossain, Ina Ostermay, Nils G. Weimann, Franz Josef Schmueckle, Johannes Borngraeber, Chafik Meliani, Marco Lisker, Bernd Tillack, Olaf Krueger, Viktor Krozer, Wolfgang Heinrich
This paper presents the performance study of a 248 GHz voltage-controlled hetero-integrated signal source using indium phosphide (InP)-on-bipolar complementary metal-oxide-semiconductor (BiCMOS) technology. The source consists of a voltage controlled oscillator (VCO) in 0.25 µm BiCMOS technology and a frequency multiplier in 0.8 µm transferred-substrate InP-heterojunction bipolar transistor techno