Proceedings of the 10th European Microwave Integrated Circuits Conference C-Band Power Amplifier Design Based on Low-Frequency Waveform Engineering Elisa Cipriani, Paolo Colantonio, Franco Giannini Department of Electronic Engineering Università degli Studi di Roma Tor Vergata Roma, Italy elisa.cipriani-uniroma2.it Gianni Bosi, Antonio Raffo, Valeria Vadalà, Giorgio Vannini Department of Enginee

Proceedings of the 10th European Microwave Integrated Circuits Conference High Speed Phase Modulator Driver Unit in 55 nm SiGe BiCMOS for a Single-Channel 100 Gb/s NRZ Silicon Photonic Modulator Jérémie Prades1,2, Anthony Ghiotto1, Denis Pache2, and Eric Kerhervé1 1 Univ. Bordeaux, Bordeaux INP, CNRS, IMS, UMR 5218, F-33400, Talence, France 2 STMicroelectronics, 850 rue Jean Monnet, F-38926, Cro

Proceedings of the 10th European Microwave Integrated Circuits Conference Thermal Performance Assessment in AlGaN/GaN Structures By Microsensor Integration Osvaldo Arenas, Élias Al Alam, Ahmed Chakroun, Vincent Aimez, Abdelatif Jaouad, Richard Ares, Francois Boone, Hassan Maher Laboratoire Nanotechnologies Nanosystèmes (LN2) CNRS UMI-3463. Institut Interdisciplinaire d'Innovation Technologique (3

Proceedings of the 10th European Microwave Integrated Circuits Conference High Efficiency Ultra Broadband GaN Amplifier Using Series-Shunt Inductor Matching Network Eigo Kuwata, Atsuo Sugimoto, Christer M. Andersson, Shuichi Sakata, Hidetoshi Koyama, Yoshitaka Kamo, Koji Yamanaka and Hiroshi Fukumoto Information Technology R&D Center Mitsubishi Electric Corporation Ofuna 5-1-1, 247-8501 Kamakura,

Proceedings of the 10th European Microwave Integrated Circuits Conference Temperature Measurements in RF Operating Conditions of AlGaN/GaN HEMTs Using IR Microscopy and Raman Spectroscopy Lény Baczkowski1,2, Jean-Claude Jacquet1, Olivier Jardel1, Christophe Gaquière2, Myriam Moreau3, Dominique Carisetti4, Laurent Brunel5, and Franck Vouzelaud6 III-V Lab, Marcoussis, France IEMN, University of Lil

Proceedings of the 10th European Microwave Integrated Circuits Conference Joint Compensation of I/Q Impairments, Power Amplifier Nonlinearity and Crosstalk in MIMO Transmitters using Two-Box Model Milica Bozic, Djuradj Budimir Wireless Communication Research Group, University of Westminster London, W1W 6UW, UK e-mail: d.budimir-wmin.ac.uk Abstract--A novel two-box model for joint compensation of

Proceedings of the 10th European Microwave Integrated Circuits Conference A First Step Towards a 230W SSPA for Galileo System Exploiting European GaN Technology R. Giofr´ , P. Colantonio, E. Cipriani, e R. Danieli, F. Giannini Electronic Engineering Department University of Roma Tor Vergata via del Politecnico 1, 00133 Roma, Italy Email: giofr-ing.uniroma2.it L. Gonzalez, F. De Arriba, L. Cabria

Proceedings of the 10th European Microwave Integrated Circuits Conference A Dual-Band UMTS/LTE Highly Power-Efficient Class-ABJ Doherty GaN PA V. Carrubba, E. Ture, S. Maroldt, M. Mußer, F. Van Raay, R. Quay, O. Ambacher Fraunhofer Institute for Applied Solid State Physics (IAF), Tullastrasse 72, 79108, Freiburg, Germany Abstract -- This paper reports on the realization of a dual-band high power

Proceedings of the 10th European Microwave Integrated Circuits Conference Active Baseband Drain-Supply Terminal Load-Pull of an X-band GaN MMIC PA Gian Piero Gibiino#,*, Gustavo Avolio*, Scott Schafer°, Dominique Schreurs*, Zoya Popovi°, Alberto Santarelli#, Fabio Filicori# DEI "Guglielmo Marconi", University of Bologna, Viale Risorgimento 2, 40136 Bologna, Italy * Div. ESAT-TELEMIC, KU Leuven, K

Proceedings of the 10th European Microwave Integrated Circuits Conference Tunable In-package Impedance Matching for High Power Transistors based on Printed Ceramics Alex Wiens , Sebastian Preis , Christian Kohler , Daniel Kienemund , Holger Maune , Olof Bengtsson , M. Nikfalazar , Joachim R. Binder , Wolfgang Heinrich and Rolf Jakoby Institut Ferdinand-Braun-Institut, für Mikrowellentechnik un