Proceedings of the 10th European Microwave Integrated Circuits Conference 0.25 µm AlGaN/GaN HEMT Nonlinearity Modelling and Characterization Over a Wide Temperature Range Mohammad A Alim1, Ali A Rezazadeh1, Christophe Gaquiere2, Mayahsa M Ali1, Norshakila Haris1, Peter B Kyabaggu1 and Yongjian Zhang1 Microwave and Communication System Group, School of Electrical and Electronics Engineering, The U

Proceedings of the 10th European Microwave Integrated Circuits Conference Trap investigation under class AB operation in AlGaN/GaN HEMTs based on Output-Admittance Frequency Dispersion, Pulsed and Transient Measurements Agostino Benvegnù1,2, Davide Bisi2, Sylvain Laurent1, Matteo Meneghini2, Gaudenzio Meneghesso2, Jean-Luc Muraro3, Denis Barataud1, Enrico Zanoni2, Raymond Quere1. 1 C²S² departme

Proceedings of the 10th European Microwave Integrated Circuits Conference Center Frequency and Bandwidth tunable Waveguide Bandpass Filter with Transmission Zeros Christian Arnod Tesat Spacecom GmbH 71522 Backnang, Germany Email: christian.arnold-tesat.de Jean Parlebas Tesat Spacecom GmbH 71522 Backnang, Germany Email: jean.parlebas-tesat.de Thomas Zwick Department of Microwave and Electronics

Proceedings of the 10th European Microwave Integrated Circuits Conference 100-166 GHz Wide Band High Speed Digital Dynamic Frequency Divider Design in 0.13 µm SiGe BiCMOS Technology U. Ali, M. Bober, A. Thiede University of Paderborn, Warburger Str.100, 33098 Paderborn, Germany umair.ali-uni-paderborn.de S. Wagner Fraunhofer - IAF, Tulla Str.72, 79108 Freiburg, Germany sandrine.wagner-iaf.fraunh

Proceedings of the 10th European Microwave Integrated Circuits Conference Analysis of a GaN/SiC UHF Radar Amplifier for Operation at 125V Bias Gabriele Formicone and James Custer Integra Technologies Inc. 321 Coral Circle, El Segundo, CA, 90245 USA Abstract--The relationship between Fe concentration in the buffer layer and breakdown voltage of an AlGaN/GaN on SiC HEMT transistor has been investi

Proceedings of the 10th European Microwave Integrated Circuits Conference A 25 W, 2.3 to 2.7 GHz Wideband LDMOS Two-stage RFIC Power Amplifier for Driver and Small-cell Doherty Application David Yu-Ting Wu, Lei Zhao, Margaret Szymanowski Freescale Semiconductor Inc., Tempe, Arizona, USA 85284 Abstract--A 25 W, dual-path, two-stage wideband RFIC power transistor covering 2.3 to 2.7 GHz band and t

Proceedings of the 10th European Microwave Integrated Circuits Conference G-Band Frequency Doubler based on InP Transferred-Substrate Technology T. Al-Sawaf, M. Hossain, N. Weimann, O. Krüger, V. Krozer, W. Heinrich Ferdinand-Braun-Institut (FBH), Leibniz-Institut für Höchstfrequenztechnik, Berlin, Germany Email: thualfiqar.alsawaf-fbh-berlin.de Abstract-- A G-band broadband frequency doubler bas

Proceedings of the 10th European Microwave Integrated Circuits Conference New Ultra Low ESR Mosaïc PICS Capacitors For Power Conversion Mohamed Mehdi Jatlaoui, Ludovic Fourneaud, Frederic Voiron, IPDiA 2 rue de la girafe, Caen, France mohamed.jatlaoui-ipdia.com Abstract--This paper presents a new architecture of capacitive elements (MOSAIC), where the global capacitance is constructed out of a ma

Proceedings of the 10th European Microwave Integrated Circuits Conference Tunable Band-Reject Filter and Suppression of InBand Interfering Signals in Mobile Communication Dieter Ferling, Xin Yu, Rupert Rheinschmitt, and Andreas Pascht Alcatel-Lucent Bell Labs 70435 Stuttgart, Germany Abstract -- For supporting a more efficient usage of available spectrum by mobile communication in unlicensed ban

Proceedings of the 10th European Microwave Integrated Circuits Conference Project-Based RF/Microwave Education Richard L. Campbell and Branimir Pejcinovic Department of Electrical and Computer Engineering Portland State University Portland, Oregon USA Abstract--Immediate application of learned fundamentals to laboratory work is standard practice in Electrical Engineering Education, but student e