Highlighting trapping phenomena in microwave GaN HEMTs by low-frequency -parameters
Clément Potier, Jean-Claude Jacquet, Christian Dua, Audrey Martin, Michel Campovecchio, Mourad Oualli, Olivier Jardel, Stéphane Piotrowicz, Sylvain Laurent, Raphaël Aubry, Olivier Patard, Piero Gamarra, Marie-Antoinette di Forte-Poisson, Sylvain L. Delage, Raymond Quéré
This paper presents an original characterization method of trapping phenomena in gallium nitride high electron mobility transistors (GaN HEMTs). This method is based on the frequency dispersion of the output-admittance that is characterized by low-frequency S-parameter measurements. As microwave performances of GaN HEMTs are significantly affected by trapping effects, trap characterization is esse