Proceedings of the 44th European Microwave Conference Design of a GaN HEMT Power Amplifier Using Resistive Loaded Harmonic Tuning Sebastian Preis1,2*, Zihui Zhang1, Mhd. Tareq Arnous1 2 Microwave Engineering Laboratory, Berlin Institute of Technology, Berlin, Germany Ferdinand-Braun-Institut, Leibniz-Institut fuer Hoechstfrequenztechnik, Berlin, Germany switch-mode or harmonically tuned amplifie

Proceedings of the 44th European Microwave Conference Feasibility of UHF-RFID Links Involving Loop-Tags Implanted into Human Limbs R.Lodato, G. Marrocco Dep. of Civil Engineering and Informatics Pervasive Electromagnetic Lab, University of Tor Vergata Rome, Italy lodato-disp.uniroma2.it, gaetano.marrocco-uniroma2.it R.Pinto, V. Lopresto Unit of Radiation Biology and Human Health ENEA Rome, Italy

Proceedings of the 44th European Microwave Conference Using Common-Mode Filtering Structures with Microstrip Differential Lines in a Multilayer Printed Circuit Board Environment Evan Sawyer, Christopher Kodama, Christopher O'Daniel, Joshua Cook and Edward Wheeler Electrical and Computer Eng. Rose-Hul man Institute of Tech., 5500 Wabash Avenue, Terre Haute, IN 47803, USA wheeler-rose-hulman.edu Ab

Proceedings of the 44th European Microwave Conference 60 GHz-Band Electro-Optic Modulators Using Array Antenna Electrodes and Polarization-Reversed Structures for SDM Wireless Systems Hiroshi Murata, Naohiro Kohmu, Yasuyuki Okamura Graduate School of Engineering Science, Osaka University 1-3 Machikaneyama, Toyonaka, Osaka 560-8531 Japan. murata-ee.es.osaka-u.ac.jp Abstract-- New array antenna ele

Proceedings of the 44th European Microwave Conference Miniaturized MEMS-based GSG Probes for Microwave Characterization Jaouad Marzouk, Steve Arscott, Kamel Haddadi,Tuami Lasri and Gilles Dambrine Institute of Electronics, Microelectronics and Nanotechnology, University Lille 1 Avenue Poincaré CS 60069 ­ 59652 Villeneuve d'Ascq Cedex ­ France Mail: jaouad.marzouk-iemn.univ-lille1.fr Abstract --

Proceedings of the 44th European Microwave Conference A 25W X-band GaN PA in SMT Package Leckey, J.G M/A-COM Technology Solutions, Belfast, N. Ireland. jonathan.leckey-macomtech.com Abstract--A single stage X-band (9-10GHz) PA module has been developed using a discrete 0.25um GaN transistor with 4.8mm gate periphery, that incorporates input and output matching via discrete substrates in package.

Proceedings of the 44th European Microwave Conference Phase-Modulated DSM-PWM Hybrids with Pulse Length Restriction for Switch-Mode Power Amplifiers Daniel Markert , Christoph Haslach , Holger Heimpel , Andreas Pascht , and Georg Fischer Labs, Alcatel-Lucent Deutschland AG, 70435 Stuttgart, Lorenzstr. 10 Erlangen-Nuremberg, Institute for Electronics Engineering, 91058 Erlangen, Cauerstr. 9 Email:

Proceedings of the 44th European Microwave Conference Improved phase linearity in Source Field Plate AlGaN/GaN HEMTs P. Colantonio, F. Giannini, R. Giofr´ and L. Piazzon e V. Camarchia, G. Ghione, M. Pirola and R. Quaglia A. Nanni, A. Pantellini and C. Lanzieri DEE - University of Roma Tor Vergata DET - Politecnico di Torino Selex ES - GaAs/GaN Foundry R&D Via del Politecnico 1 - Roma, Italy Cors

Proceedings of the 44th European Microwave Conference Asymmetrical Mechanical Design for Bouncing Suppression in RF-MEMS Switches Emilien Lemoine, Cyril Guines, Arnaud Pothier, Pierre Blondy XLIM-UMR CNRS 7252 Université de Limoges 87000 Limoges France Abstract-- Contact bouncing is among the most critical phenomenon reducing RF-MEMS reliability. This paper shows that very simple changes in switc

Proceedings of the 44th European Microwave Conference Microstructured Frequency Selective Quasi-Optical Components for Submillimeter-Wave Applications S. A. Kuznetsovl,2,3, M. A. Astafyevl,2, A. V. Gelfand3, and A. V. Arzhannikovl,2 Novosibirsk State University, Novosibirsk, Russia Budker Institute of Nuclear Physics SB RAS, Novosibirsk, Russia 3 Institute of Semiconductor Physics SB RAS, Novosib