Proceedings of the 8th European Microwave Integrated Circuits Conference Design and Breakdown Behavior of 77 GHz Variable Gain Power Amplifiers in SiGe-Technology K. Borutta # , B. Laemmle # , C. Wagner , L. Maurer , R. Weigel # and D. Kissinger # Institute for Electronics Engineering, University of Erlangen-Nuremberg, Cauerstr. 9, 91058 Erlangen, Germany, borutta-lte.e-technik.uni-erlangen.de

Proceedings of the 8th European Microwave Integrated Circuits Conference Investigation of gate and drain leakage currents of AlGaN/GaN HEMTs at subthreshold regime for temperature range 300K ­ 400K M. Rzin*1, A. Curutchet*, N. Labat*, N. Malbert*, L.Brunel*^, B. Lambert^ IMS laboratory, UMR-CNRS 5218, Talence, France 1 mehdi.rzin-u-bordeaux1.fr ^ United Monolithic Semiconductors, Villebon-sur-Yve

Proceedings of the 8th European Microwave Integrated Circuits Conference Efficiency Enhancement of an Envelope Tracking Power Amplifier Combining Supply Shaping and Dynamic Biasing F. F. Tafuri, D. Sira, O. K. Jensen, T. Larsen Department of Electronic Systems, TPS Aalborg University Niels Jernes Vej 12, 9220 Aalborg, Denmark {fft, ds, okj, tl}-es.aau.dk Abstract-- This paper presents a new meth

Proceedings of the 8th European Microwave Integrated Circuits Conference Next-Generation CMOS-on-Insulator Multi-element Network For Broadband Antenna Tuning Tero Ranta, Richard Whatley, Chih-Chieh Cheng and Marc Facchini Mobile Wireless Solutions Business Unit Peregrine Semiconductor Corporation San Diego, CA 92121, United States Abstract-- Increased spectrum coverage and data rates required by

Proceedings of the 8th European Microwave Integrated Circuits Conference Design of a 24 GHz Analog Frontend for an Optically Powered RFID Transponder for the Integration into Metallic Components Johannes Meyer, Quang Huy Dao and Bernd Geck Institut für Hochfrequenztechnik und Funksysteme Leibniz Universität Hannover Hannover, Germany meyer-hft.uni-hannover.de Abstract-- The fundamental construct

Proceedings of the 8th European Microwave Integrated Circuits Conference Load-Modulated GaN Power Amplifier Implementing Tunable Thick Film BST Components Mhd. Tareq Arnous1, Alex Wiens2, Sebastian Preis1, Holger Maune2, Khaled Bathich1, Mohmmad Nikfalazar2, Rolf Jakoby2 and Georg Boeck1, 3 2 Microwave Engineering Laboratory, Berlin Institute of Technology Berlin, Germany Institute for Microwave

Proceedings of the 8th European Microwave Integrated Circuits Conference Compact 110-170 GHz Amplifier in 50 nm mHEMT Technology with 25 dB Gain T. Merkle, S. Koch Sony Deutschland GmbH Stuttgart, Germany Email: thomas.merkle-eu.sony.com A. Leuther, M. Seelmann-Eggebert, H. Massler I. Kallfass Fraunhofer Institute for Applied Solid State Physics (IAF) Freiburg, Germany Email: arnulf.leuther-iaf.

Proceedings of the 8th European Microwave Integrated Circuits Conference A Linear 4W Power Amplifier at K-Band Using 250nm AlGaN/GaN HEMTs C. Friesicke , R. Quay , B. Rohrdantz , and A. F. Jacob Institut f¨ r Hochfrequenztechnik, Technische Universit¨ t Hamburg-Harburg, Denickestr. 22, 21073 Hamburg, Germany u a christian.friesicke-tuhh.de Fraunhofer Institute for Applied Solid-State Physics,

Proceedings of the 8th European Microwave Integrated Circuits Conference A 6-GS/s 6-bit Time Interleaved SAR-ADC Hao Huang, Markus Grözing, Johannes Digel, Damir Ferenci, Felix Lang, Manfred Berroth Institute of Electrical and Optical Communications Engineering, University of Stuttgart, Stuttgart, Germany Abstract-- This paper presents a 6-GS/s 6-bit time-interleaved successive approximation regi

Proceedings of the 8th European Microwave Integrated Circuits Conference A Novel Self Collapsed Corrugated MEMS Phase Shifter Maher Bakri-Kassem Department of Electrical Engineering, American University of Sharjah, Sharjah, UAE mbakrikassem-aus.edu Abstract-- A novel CPW based phase shifter that relies on automatic collapse of capacitive switches is designed, fabricated and tested. The novel desi