EuMC: Comparison of SiC and GaN Substrates Used for Epitaxy of HEMT Structures
M. Leszczynski, P. Prystawko, P. Kruszewski, J. Plesiewicz, I. Kasalynas, R. Dwilinski, M. Zajac, R. Kucharski
Proceedings of the 43rd European Microwave Conference
Comparison of SiC and GaN Substrates Used for Epitaxy of HEMT Structures
Leszczynski M1,2, Prystawko P1,2, Kruszewski P1,2, Plesiewicz J2, Kasalynas I3, Dwiliski R4, Zajc M4, Kucharski R4
Institute of High Pressure Physics UNIPRESS, Warsaw, Poland 2 TopGaN Sp.z.o.o., Warsaw, Poland 3 Institute of Semiconductor Physics, Vilnus University, Vilnu