Proceedings of the 7th European Microwave Integrated Circuits Conference A Distributed Electro-thermal Model of AlGaN/GaN HEMT Power-Bar derived from the Elementary Cell Model A. Xiong, E. Gatard, C. Charbonniaud AMCAD Engineering France xiong-amcad-engineering.fr M. Faqir, M. Kuball University of Bristol United Kingdom M. Buchta United Monolithic Semiconductors GmbH Germany S. Rochette THALES

Proceedings of the 7th European Microwave Integrated Circuits Conference Moment Matching Compact Models of Multiport Lossless Junctions from Terminal Frequency Response Lorenzo Codecasa, Marco Politi Dip. di Elettronica e Informazione Politecnico di Milano Milan, Italy codecasa-elet.polimi.it, politi-elet.polimi.it Abstract--A novel multipoint moment matching technique is presented to derive comp

Proceedings of the 7th European Microwave Integrated Circuits Conference K-Band Wide-Locking-Range Divide-by-5 Injection-Locked Frequency Divider in a 0.18-m CMOS Technology Po-Chi Wang, Jhin-Ying Lyu, Ming-Wei Li, Tzuen-Hsi Huang, and Huey-Ru Chuang Institute of Computer and Communication Engineering, Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan, R.O.C chu

Proceedings of the 7th European Microwave Integrated Circuits Conference A 0.6 - 3.6 GHz CMOS Wideband Demodulator for 4G Mobile Handsets Antoine Khy and Bernard Huyart Département d'Electronique et Communications (COMELEC) TELECOM ParisTech 46 rue Barrault 75013 Paris, France antoine.khy-telecom-paristech.fr bernard.huyart-telecom-paristech.fr Abstract-- This paper presents a 0.6 ­ 3.6 GHz CMOS

Proceedings of the 7th European Microwave Integrated Circuits Conference A Low Noise Ka-Band Amplifier for Radio Astronomy Mark McCulloch 1 , Edward Blackhurst 1 , Richard Davis 1 , Adrian Galtress 1 , Danielle George 2 , Simon Melhuish 1 , Lucio Piccirillo 1 1 School of Physics and Astronomy, The University of Manchester Manchester, UK 1 http://www.jb.man.ac.uk/contact/people.html 2 School o

Proceedings of the 7th European Microwave Integrated Circuits Conference Study of Dependence of HEMT Noise Parameters on Gate Periphery in Microwave LNA Design Mousumi Roy and Danielle George Saswata Bhaumik1 School of Electrical and Electronic Engineering ASTRON University of Manchester, Oxford Road, Manchester, M13 9PL, UK The Netherlands Institute for Radio Astronomy Email: Mousumi.Roy-manches

Proceedings of the 7th European Microwave Integrated Circuits Conference An E-band Very Low Noise Amplifier with Variable Gain Control on 100 nm GaAs pHEMT Technology Estelle Byk1, Anne Marie Couturier1, Marc Camiade1, Charles Teyssandier1, Michael Hosch2, Hermann Stieglauer2, Philippe Fellon1 United Monolithic Semiconductors SAS 10 avenue du Québec, 91140 Villebon-sur-Yvette, France 2 United Mon

Proceedings of the 7th European Microwave Integrated Circuits Conference Investigations on Noise Processes in Optical Resonator Based Microwave Oscillators Khaldoun Saleh1,2,3, Pierre-Henri Merrer1,2, Olivier Llopis1,2 and Gilles Cibiel3 1 CNRS; LAAS, 7 Avenue du Colonel Roche, F-31077 2 Université de Toulouse; UPS, F-31077 3 CNES, 18 Avenue Edouard Belin, F-31401 Toulouse, France ksaleh-laas.fr

Proceedings of the 7th European Microwave Integrated Circuits Conference Broadband 65nm CMOS SOI LNA for a 100Gbit/s fiber-optic SCM transceiver Duncan Platt, Lars Pettersson, Michael Salter Acreo AB Norrköping, Sweden duncan.platt-acreo.se Abstract -- The suitability of the ST Microelectronics 65nm CMOS LP SOI process on HR substrate for a 100Gbit/s fiberoptic SCM transceiver LNA is examined in

Proceedings of the 7th European Microwave Integrated Circuits Conference A 30W, 46% PAE S-Band GaN HEMT MMIC Power Amplifier for Radar Applications O. Jardel1, M. Olivier2, D. Lancereau1, R. Aubry1, E. Chartier1, N. Sarazin1, M.-A. Di Forte Poisson1, S. Piotrowicz1, M. Stanislawiak2, D. Rimbert2, S.L. Delage1, P. Eudeline2 III-V Lab Marcoussis, France olivier.jardel-3-5lab.fr 1 Thales Air System