Proceedings of the 6th European Microwave Integrated Circuits Conference 24 GHz Transceiver Front-End with Integrated Ramp Generator Wojciech Debski, Wolfgang Winkler Silicon Radar GmbH, Im Technologiepark 25 Frankfurt (Oder), Germany debski/winkler-siliconradar.com Dieter Genschow, Rolf Kraemer IHP GmbH, Im Technologiepark 25, Frankfurt (Oder), Germany genschow/kraemer-ihp-microelectronics.com

Proceedings of the 6th European Microwave Integrated Circuits Conference A 60 GHz Four Channel Beamforming Transmitter in 0.25 µm SiGe BiCMOS Technology M. Elkhouly1, S. Glisic 1, F. Ellinger2, J.C.Schyett 1 Circuit Design Department, IHP Microelectronics, Frankfurt (Oder), Germany 2 Chair for Circuit Design and Network Theory, Dresden University of Technology, Dresden, Germany elkhouly-ihp-micro

Proceedings of the 6th European Microwave Integrated Circuits Conference InAlGaN/GaN MMICs in Microstrip Transmission Line Technology for Wideband Applications P. Schuh, H. Sledzik, M. Oppermann CASSIDIAN, Cassidian Electronics W¨ rthstr. 85 o D-89077 Ulm, Germany patrick.schuh-ieee.org Fraunhofer Institute for Applied Solid-State Physics D-79108 Freiburg, Germany R. Quay, J. K¨ hn, T. Lim, u P

Proceedings of the 6th European Microwave Integrated Circuits Conference Experimental Verification of Analytical Design Equations based on X-parameters® for predicting role of Series Feedback A. M. Pelaez-Perez and J. I. Alonso Departamento de Señales, Sistemas y Radiocomunicaciones Universidad Politécnica de Madrid Madrid, Spain apelaez-gmr.ssr.upm.es M. Fernandez-Barciela and A. Rodriguez-Test

Proceedings of the 6th European Microwave Integrated Circuits Conference A Scalable X-Parameter Model for GaAs and GaN FETs Leckey, J.G M/A-COM Technology Solutions, Belfast, N. Ireland. BT9 5NW jonathan.leckey-macomtech.com Abstract -- A new nonlinear FET model formulation is proposed which comprises an X-parameter (S-function or Poly Harmonic Distortion) intrinsic model combined with lumped ext

Proceedings of the 6th European Microwave Integrated Circuits Conference A New Type of SiGe 3D Coplanar Strip and Its Application to the Design of Low Loss ECPW and TFMS Series/Shunt stubs K. Hettak^1,T. Ross#2, J. Wight#3, G.A. Morin*4 ^ Communications Research Centre Canada, 3701 Carling Ave, Ottawa, Ontario, Canada, K2H 8S2 1 khelifa.hettak-crc.gc.ca 2 # Department of Electronics, Carleton

Proceedings of the 6th European Microwave Integrated Circuits Conference I-DLTS, Electrical Lag and Low Frequency Noise Measurements of Trapping Effects in AlGaN/GaN HEMT for Reliability Studies J.G. Tartarin#^1, S. Karboyan#^2, F. Olivié#^3, G. Astre#^, L. Bary^4, B. Lambert*5 Universite de Toulouse ^ LAAS-CNRS 7 avenue du Colonel Roche, 31.077 Toulouse cedex 4, France tartarin-laas.fr skarboya-

Proceedings of the 6th European Microwave Integrated Circuits Conference Thermal Behavior of AlGaN/GaN HEMT on Silicon Microstrip Technology Alessio Pantellini, Antonio Nanni, Claudio Lanzieri SELEX Sistemi Integrati Via Tiburtina km12.400, 00131 Rome, Italy apantellini-selex-si.com Abstract--High-resistivity Silicon substrates, thanks to their low cost and large wafer diameter, could represent

Proceedings of the 6th European Microwave Integrated Circuits Conference Harmonic Control In Package of Power GaN Transistors for High Efficiency and Wideband Performances in S-Band J.Chéron, M.Campovecchio, D.Barataud, T.Reveyrand XLIM ­ UMR 6172, Université de Limoges/CNRS, Limoges, France. jerome.cheron-xlim.fr M.Stanislawiak, P.Eudeline THALES AIR SYSTEM, Boos, France. D.Floriot UMS, Orsay,

Proceedings of the 6th European Microwave Integrated Circuits Conference RF­MEMS Tunable Evanescent Mode Cavity Filter in LTCC Technology at Ku­Band Benedikt Schulte 1, Volker Ziegler , Bernhard Schoenlinner , Ulrich Prechtel , Hermann Schumacher Deutschland GmbH, Innovation Works Willy­Messerschmitt­Str. 1, D-85521 Ottobrunn, Germany 1 EADS benedikt.schulte-eads.net University of Ul