Proceedings of the 6th European Microwave Integrated Circuits Conference Characterization of GaN and GaAs FETs Through a New Pulsed Measurement System Alberto Santarelli, Rafael Cignani, Daniel Niessen, Sara D'Angelo, Pier Andrea Traverso, Fabio Filicori Department of Electronics (DEIS), University of Bologna Viale Risorgimento 2, 40136 Bologna, Italy Email: alberto.santarelli-unibo.it Abstract-

Proceedings of the 6th European Microwave Integrated Circuits Conference 75-nm-T-shaped-gate InAlN/AlN/GaN HEMT on Sapphire With 100 GHz Cutoff Frequency F. Lecourt, N. Defrance, V. Hoel, J-C. De Jaeger Microwave Power Devices Group IEMN, UMR CNRS 8520 Villeneuve d'Ascq, France francois.lecourt-ed.univ-lille.fr N. Ketteniss, H. Behmenburg, M. Eickelkamp, A. Vescan Chair of Electromagnetic Theory

Proceedings of the 6th European Microwave Integrated Circuits Conference Broadband, highly integrated receiver frontend up to 67 GHz Michael Sterns 1 , Robert Rehner, Dirk Schneiderbanger, Siegfried Martius and Lorenz-Peter Schmidt Chair for High Frequency Technology, University of Erlangen-Nuremberg, Cauerstr. 9, D-91058 Erlangen, Germany 1 michael-lhft.eei.uni-erlangen.de Abstract-- In this p

Proceedings of the 6th European Microwave Integrated Circuits Conference Small Signal and Pulse Characteristics of AlN/GaN MOS-HEMTs D. MacFarlane#1, S. Taking#, S.K. Murad*2, E. Wasige#3 # High Frequency Electronics Research Group, University of Glasgow, UK 1 d.macfarlane.2-research.gla.ac.uk 3 edward.wasige-glasgow.ac.uk 2 * NXP Semiconductors, Gerstweg 2, 6534 AE, Nigmegen, The Netherlands

Proceedings of the 6th European Microwave Integrated Circuits Conference Design, Fabrication and Measurements of Reliable Low Voltage RF-MEMS Switched Varactors J. Gauvin, F. Barrière, D. Mardivirin, A. Pothier, A. Crunteanu, P. Blondy XLIM ­ UMR 6172, Université de Limoges/CNRS, Limoges, France. jonathan.gauvin-xlim.fr Abstract--A reliable low actuation voltage RF-MEMS switch is fabricated follo

Proceedings of the 6th European Microwave Integrated Circuits Conference A High-Power Ka-Band RF-MEMS 2-Bit Phase Shifter on Sapphire Substrate B. Bélenger#1, B. Espana#2, S. Courrèges*, P. Blondy*, O. Vendier#, D. Langrez#, J.-L. Cazaux# # Thales Alenia Space, 26 av. JF Champollion, 31037 Toulouse Cedex1, France 1 2 benoit.belenger-thalesaleniaspace.com beatrice.espana-thalesaleniaspace.com *

Proceedings of the 6th European Microwave Integrated Circuits Conference DC (10 Hz) to RF (40 GHz) output conduction extraction by S-parameters measurements for in-depth characterization of AlInN/GaN HEMTS, focusing on low frequency dispersion effects A. El Rafei, G. Callet, G. Mouginot, J. Faraj, S. Laurent, M. Prigent, R. Quere C²S² department XLIM laboratory 7 rue Jules Valles 19100 Brive La G

Proceedings of the 6th European Microwave Integrated Circuits Conference A Silicon Platform With Through-Silicon Vias for Heterogeneous RF 3D Modules Pierre Bar, Sylvain Joblot, Perceval Coudrain, Jean-François Carpentier STMicroelectronics, 850 rue Jean Monnet, 38926 Crolles Cedex, France Bruno Reig, Christine Fuchs, Christine Ferrandon, Jean Charbonnier, Henri Sibuet CEA-LETI/Minatec, 17 rue d

Proceedings of the 6th European Microwave Integrated Circuits Conference An Enhanced Modulated Waveform Measurement System for the Robust Characterization of Microwave Devices under Modulated Excitation M. Akmal, J. Lees, S. Jiangtao, V. Carrubba, Z. Yusoff, S. Woodington, J. Benedikt, P. J. Tasker Centre for High Frequency Engineering Cardiff University Cardiff, United Kingdom AkmalM1-Cardiff.ac

Proceedings of the 6th European Microwave Integrated Circuits Conference Analysis of GaN HEMTs for Broadband High-Power Amplifier Design M. Mußer, R. Quay, F. van Raay, M. Mikulla and O. Ambacher Fraunhofer Institute of Applied Solid-State Physics, Tullastr. 72, 79108 Freiburg, Germany markus.musser-iaf.fraunhofer.de Abstract-- In this paper we present the analysis of GaN HEMT power cells for br