A new nonlinear HEMT model for AlGaN/GaN switch applications
Guillaume Callet, Jad Faraj, Olivier Jardel, Christophe Charbonniaud, Jean-Claude Jacquet, Tibault Reveyrand, Erwan Morvan, Stéphane Piotrowicz, Jean-Pierre Teyssier, R. Quéré
We present here a new set of equations for modeling the I?V characteristics of Field Effects Transistors (FETs), particularly optimized for AlGaN/GaN HEMTs. These equations describe the whole characteristics from negative to positive breakdown loci, and reproduce the current saturation at high level. Using this model enables to decrease the modeling process duration when a same transistor topology