A self-biased GaN LNA with 30 dB gain and 21 dBm for 5G communications
Yi Wang, Tongde Huang, Saisai Jin, Chong Wang, Dongdong Ma, Hongchang Shen, Chong Li, Yuehua Li, Wen Wu
We present a self-biased three-stage GaN-based monolithic microwave integrated circuit low-noise amplifier (LNA) operating between 26 and 29 GHz for 5G mobile communications. The self-biasing circuit, common-source topology with inductive source feedback, and RLC negative feedback loops between gate and drain of the third transistor were implemented to achieve low noise, good port match, high stab