Proceedings of the 2nd European Microwave Integrated Circuits Conference Electrostatic Capacitances of High-Speed SiGe HBT Nicolas Zerounian#1, Eloy Ramirez Garcia#, Frédéric Aniel#, Benoît Barbalat#,*, Pascal Chevalier*2, Alain Chantre* # Institut d'Electronique Fondamentale, Univ Paris-Sud, CNRS, UMR 8622, Bt. 220, F-91405 Orsay, France 1 nicolas.zerounian-ief.u-psud.fr * STMicroelectronics,

Proceedings of the 2nd European Microwave Integrated Circuits Conference Reduction of Buffer Leakage Current in AlGaN/GaN High-Electron-Mobility-Transistor Structure on Si Substrate by Reducing the Dislocation Density in AlN Buffer Layer Yasuhiro Oda#1, Noriyuki Watanabe#2, Masanobu Hiroki#3, Takuma Yagi*4, Takashi Kobayashi#5 #High-Speed Devices and Technology Laboratory, NTT Photonics Laborator

Proceedings of the 2nd European Microwave Integrated Circuits Conference A Novel Hybrid Analysis Approach for Subharmonic Self-Oscillating Mixers Combining Volterra Series and Conversion Matrix Methods Simone A. Winkler#,*1, Ke Wu#2, Andreas Stelzer*3 # Poly-Grames Research Center, École Polytechnique Montréal 2500, ch. de Polytechnique, Montréal, QC H3T 1J4, Canada 1 simone.winkler-polymtl.ca

Proceedings of the 2nd European Microwave Integrated Circuits Conference Transport Shot Noise Models and NFmin Comparison for SiGe HBTs under Different Operation Configurations Hui Li #1, Zhenqiang Ma #2, Guofu Niu *3 # Department of Electrical and Computer Engineering, University of Wisconsin-Madison 1415 Engineering Drive, Madison, WI53706, USA 2 mazq-engr.wisc.edu * Department of Electrica

Proceedings of the 2nd European Microwave Integrated Circuits Conference Design Guidelines for Tunable Coplanar and Microstrip Patch Antennas Aparna Sankarasubramaniam1, Prasad. N. Shastry2, and Krishna Katragadda3 1 Validus Technologies, Peoria, Illinois, USA, Phone: 1-309-868-6264 aparna-pervalidus.com 2 Department of Electrical and Computer Engineering, Bradley University, Peoria, Illinois,

Proceedings of the 2nd European Microwave Integrated Circuits Conference A 9.5-10.5GHz 60W AlGaN/GaN HEMT for X-band High Power Application T.Yamamoto, E.Mitani, K.Inoue, M.Nishi and S.Sano Eudyna devices Inc. Yamanashi Plant 1000 Kamisukiawara, Showa-cho, Nakakoma-gun, Yamanashi, 409-3883, JAPAN t.yamamoto-eudyna.com e.mitani-eudyna.com k.inoue-eudyna.com m.nishi-eudyna.com s.sano-eudyna.com Ab

Proceedings of the 2nd European Microwave Integrated Circuits Conference High-efficiency GaN class-E power amplifier with compact harmonic-suppression network Han Gil Bae, Renato Negra, Slim Boumaiza, Fadhel M. Ghannouchi iRadio Laboratory, Electrical and Computer Engineering Department, Schulich School of Engineering, University of Calgary ICT 402, 2500 University Drive NW, Calgary, AB, Canada T

Proceedings of the 2nd European Microwave Integrated Circuits Conference Low-voltage and high-tunability inter-digital capacitors using lead zinc niobate (PbO-ZnO-Nb2O5) thin films Young Chul Lee#1, Young Pyo Hong*, Kyung Hyun Ko*2 # Division of Marine Electronics and Communication Engineering, Mokpo National Maritime University (MMU) 571-2 Jhukgyo-dong, Mokpo, Jeonnam 530-729, Korea 1 leeyc-mm

Proceedings of the 2nd European Microwave Integrated Circuits Conference High Performance K-Band MEMS Switches John S. McKillop and David A. Goins TeraVicta Technologies, Inc. 2535 Brockton Drive, Austin, TX 78758, USA jmckillop-teravicta.com dgoins-teravicta.com Abstract -- This paper presents a comparison of the design, construction, and performance of broadband RF MEMS switches operating in t

Proceedings of the 2nd European Microwave Integrated Circuits Conference A Simplified, Empirical Large-Signal Model for SiC MESFETs Kelvin Yuk1, G. R. Branner2 Dept. Of Electrical and Computer Engineering, University of California, Davis One Shields Ave., Davis, CA 95616, USA 2 ksyuk-ucdavis.edu branner-ece.ucdavis.edu 1 Abstract-- A new, simplified empirical large-signal model for high power