EuMIC: AlGaN/GaN HEMTs on (001) Oriented Silicon Substrate Based on 100nm SiN Recessed Gate Technology for Low Cost Device Fabrication
S. Boulay, Salim Touati, A. Sar, V. Hoel, C. Gaquiere, J.C. De Jaeger, S. Joblot, Y. Cordier, F. Semond, J. Massies
Proceedings of the 2nd European Microwave Integrated Circuits Conference
AlGaN/GaN HEMTs on (001) oriented Silicon substrate based on 100nm SiN recessed gate technology for low cost device fabrication.
S. Boulay , S. Touati , A. Sar#,2, V. Hoel , C. Gaquière , and J.C. De Jaeger , S. Joblot*,3, Y.Cordier*, F.Semond* and J.Massies*.
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I.E.M.N/TIGER, U.M.R.-C.N.R.S. 8520, U.S.T.L