Proceedings of the 1st European Microwave Integrated Circuits Conference Systematic Evaluation of Non-Linear Microwave Device and Amplifier Models Dominique Schreurs K.U.Leuven, Div. ESAT-TELEMIC, Kasteelpark Arenberg 10, B-3001 Leuven, Belgium Abstract -- Modelling accuracy has a direct impact on the prediction quality of a circuit or system's performance. However, there is no standard way to ev

Proceedings of the 1st European Microwave Integrated Circuits Conference High Efficiency HBV Multipliers Jan Stake, Tomas Bryllert, T. Arezoo Emadi, Mahdad Sadeghi, and Josip Vukusic Chalmers University of Technology, Department of Microtechnology and Nanoscience, SE-412 96 Göteborg, Sweden Abstract -- We report on the design and MBE-growth of heterostructure barrier varactor (HBV) diode material

Proceedings of the 1st European Microwave Integrated Circuits Conference CMOS LARGE SIGNAL and RF Noise MODEL FOR CAD I. Angelov1, M. Ferndahl1, F. Ingvarson1, H. Zirath12, H.O. Vickes3 1 Microwave Electronics Laboratory, Chalmers University of Technology, S-41296 Göteborg, Sweden, 23- Ericsson AB, Microwave and High Speed Electronics Center, SE ­ 431 84 Mölndal, Sweden Ericsson Microwave Syst

Proceedings of the 1st European Microwave Integrated Circuits Conference 1 Millimeter-Wave Front-End Components in Metamorphic HEMT Technology M. Schlechtweg1 , I. Kallfass1 , A. Tessmann1 , C. Schw¨rer2 , A. Leuther1 o 1 Fraunhofer Institute for Applied Solid-State Physics (IAF) Tullastrasse 72, 79108 Freiburg, Germany email: ingmar.kallfass-iaf.fraunhofer.de 2 Siemens VDO Automotive AG Peter-D

Proceedings of the 1st European Microwave Integrated Circuits Conference S-BAND SIGE PHASE AND AMPLITUDE CONTROL MMIC F.E. van Vliet, A. de Boer and G.C. Visser TNO Defence, Security and Safety, P.O. Box 96864, 2509 JG, The Hague, The Netherlands Phone: 31.70.374.07.40, Fax: 31.70.374.06.54, Email: frank.vanvliet-tno.nl Abstract ­ This paper presents very recent achievements in the Silicon implem

Proceedings of the 1st European Microwave Integrated Circuits Conference Trends in Microwave/Millimeter-Wave Front-End Technology Gailon E. Brehm TriQuint Semiconductor, Richardson, Texas, 75080, USA Abstract -- Unique, high-performance components are utilized between the air or fiber-optic media interface and baseband/digital signal processing functions. TriQuint and other suppliers have develop

Proceedings of the 1st European Microwave Integrated Circuits Conference A Low Cost Packaging Solution for Microwave Applications R.Wormald1, S.David1, G.Panaghiston2, R.Jeffries2 1 Filtronic, Salts Mill Road, Saltaire, Shipley, West Yorkshire, BD18 3TT 2 BAE SYSTEMS Advanced Technology Centre, Great Baddow, Chelmsford, Essex CM2 8HN enable fusion bonding when producing multi-layer circuits. I

Proceedings of the 1st European Microwave Integrated Circuits Conference Noise and Dynamic Cryogenic performance of Metamorphic Transistors from 20 to 42 GHz Sébastien Delcourt1,3, Gilles Dambrine1, Nour Eddine Bourzgui1, Sylvie Lepilliet1, Christophe Laporte2, Derek Smith3, Jean-Philippe Fraysse4 IEMN, UMR CNRS 8520, Villeneuve d'Ascq, 59652, France 2 CNES, Toulouse centre, Toulouse, 31401, Fran

Proceedings of the 1st European Microwave Integrated Circuits Conference Operation of RF Power MOSFETs under Proton Radiation Ningyue Jiang1, Zhenqiang Ma1,* and Larry B. Li2 1 University of Wisconsin-Madison, Department of Electrical and Computer Engineering, 1415 Engineering Drive, Madison, WI 53706, USA * Tel/Fax: (608) 261-1095 Email: mazq-engr.wisc.edu 2 UWAVE Technology Inc., Irvine, CA 92

Proceedings of the 1st European Microwave Integrated Circuits Conference PCS Power Amplifier Module Package Using Selectively Anodized Aluminum Substrate Seong-Ho Shin1, Ju-Hyang Lee2, Bo-In Sohn1, Seung-Han Ryu1, and Young-Se Kwon1 2 Dept. of EECS, KAIST, 373-1 Guseong-dong, Yuseong-gu, Daejeon, 305-701, Korea Telecommunication Network Business, Samsung Electronics Co., LTD. Suwon, Kyungki-do,