Proceedings of the 1st European Microwave Integrated Circuits Conference Advanced Process Modules for (sub-) 45nm Analog/RF CMOS - Technology Description and Modeling Challenges S. Decoutere, V. Subramanian1) , J. Loo, C. Gustin, B. Parvais, M. Dehan and A. Mercha IMEC, Kapeldreef 75, B-3001 Leuven, Belgium 1) K.U.Leuven, Department ESAT-INSYS, 3001, Leuven, Belgium Tel: +32 16 281503, Fax: +32 1

Proceedings of the 1st European Microwave Integrated Circuits Conference A Single-Chip 5GHz WLAN Transmitter in 0.35m Si/SiGe BiCMOS Technology F. Alimenti(1), M. Borgarino(2), R. Codeluppi(2), V. Palazzari(1), M. Pifferi(2), L Roselli(1), A. Scorzoni(1), F. Fantini(2) (1) (2) Dept. of Electronic and Information Engineering, University of Perugia, via G. Duranti 93, 06125 Perugia, Italy, email

Proceedings of the 1st European Microwave Integrated Circuits Conference High Performance 94 GHz Resistive Mixer Using GaAs Metamorphic HEMT Technology Dan An, Bok-Hyung Lee, Byeong-Ok Lim, Mun-Kyo Lee, Sung-Chan Kim, Hyun-Chang Park, and Jin-Koo Rhee Millimeter-wave INnovation Technology research center (MINT), Dongguk University, 3 Ga 26, Pil-dong, Joong-gu, Seoul, 100-715, Korea Tel : +82-2-2

Proceedings of the 1st European Microwave Integrated Circuits Conference Wideband and High Gain Cascode Amplifier using Metamorphic HEMT for Millimeter-wave Applications Sung-Chan Kim, Dan An, Bok-Hyung Lee, Mun-Kyo Lee, Dong-Hoon Shin, and Jin-Koo Rhee Millimeter-wave INnovation Technology research center (MINT), Dongguk University 3-26 Pil-dong, Jung-gu, Seoul 100-715, Korea Abstract -- In this

Proceedings of the 1st European Microwave Integrated Circuits Conference Charge Effects and Transient Simulation of p-HEMT Meander Gate Switches M.A. Holm, N.I. Cameron, and D.M. Brookbanks Filtronic Compound Semiconductor Ltd., Heighington Lane Business Park, Newton Aycliffe, Co. Durham, United Kingdom DL5 6JW Abstract -- This paper presents a simulation of the transient behavior of a Filtronic

Proceedings of the 1st European Microwave Integrated Circuits Conference Study of Field Plate AlGaN/GaN HEMTs by Means of a 2DHydrodynamic Model for Power Applications B. Benbakhti, M. Rousseau, J.C. De Jaeger Institut d'Electronique, de Microélectronique et de Nanotechnologie UMR CNRS 8520 Université des Sciences et Technologies de Lille Avenue Poincaré, 59652 Villeneuve d'Ascq Cedex, France +(3

Proceedings of the 1st European Microwave Integrated Circuits Conference A Miniature YIG Tuned Oscillator/Frequency Divider Achieves Octave Tuning Bandwidth with Ultra Low Phase Noise in S, C, X and Ku Bands Allen A. Sweet1, 2 (Ph 1 510-305-6900, allensweet-aol.com) Ron Parrott1 (Ph 1 707-541-7000, Fax 1 707-541-7030, rparrott-vidaproducts.com) 1 Vida Products Inc., 3579 Westwind Blvd., Santa Ro

Proceedings of the 1st European Microwave Integrated Circuits Conference Studies of InGaAs layers growth by metalorganic chemical vapor deposition for InP-HEMTs; Effects of trimethylindium and triethylindium Ryuta Sakai, Masahiro Uchida and Gako Araki NTT Advanced Technology Corporation 3-1, Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-0124, Japan Abstract -- We studied an InGaAs epitaxial layer

Proceedings of the 1st European Microwave Integrated Circuits Conference Mixed-Mode Modeling and Parameter Extraction of Advanced InGaAs HBTs in RFIC Systems Hsien-Cheng Tseng RFIC Lab, Department of Electronic Engineering, Kun Shan University, Tainan 71003, Taiwan, R.O.C. Abstract -- Mixed-mode modeling is originally demonstrated for parameter extraction of advanced InGaAs HBTs in RFIC systems.

Proceedings of the 1st European Microwave Integrated Circuits Conference The Role and Mechanism of Fe-ion Bombardment in creating highly resistive InGaAs layers S.C. Subramaniam, A.A. Rezazadeh The Electromagnetics Research Centre, School of Electrical and Electronic Engineering, University of Manchester, Manchester, UK. M60 1QD. Tel: +44(0) 161 306 4823 Email: suba.subramaniam-gmail.com, ali.rez