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4-GHz Fully Monolithic SiGe HBT QVCO Using Superharmonic Coupling Topology
S.C. Tseng, C.C. Meng, Y.W. Chang, G.W. Huang
Proceedings of the 1st European Microwave Integrated Circuits Conference 4-GHz Fully Monolithic SiGe HBT QVCO Using Superharmonic Coupling Topology S. C. Tseng, C. C. Meng, Y. W. Chang and G. W. Huang* Department of Communication Engineering, National Chiao Tung University, Hsin-Chu, Taiwan, R.O.C. *National Nano Device Laboratories, Hsin-Chu, Taiwan, R.O.C. Abstract--This paper demonstrates a 4
Low-Voltage, Low-Power and High-Gain Mixer Based on Unbalanced Mixer Cell
No Gil Myoung, Ho Suk Kang, Seok Tae Kim, Byoung Gun Choi, Seong-Su Park, Chul Soon Park
Proceedings of the 1st European Microwave Integrated Circuits Conference Low-voltage, Low-power and High-gain Mixer Based on Unbalanced Mixer Cell No Gil Myoung1, Ho Suk Kang1, Seok Tae Kim1, Byoung Gun Choi2, Seong-Su Park2, and Chul Soon Park1 1 School of Engineering, Information and Communications University (ICU), 103-6 Munji, Yuseong, Daejeon 305-714, Korea 2 Electronics and Telecommunicat
A Novel Power Plane Topology for Suppressing Parallel-Plate-Resonance Modes in High Speed Printed Circuit Boards
Seung-Seok Oh, Jung-Min Kim, Jong-Gwan Yook
Proceedings of the 1st European Microwave Integrated Circuits Conference A Novel Power Plane Topology for Suppressing Parallel-Plate-Resonance Modes in High Speed Printed Circuit Boards Seung-Seok Oh, Jung-Min Kim, Jong-Gwan Yook Dept. of Electrical and Electronic Eng., Yonsei Univ., Korea. Tel: +82-2-2123-3565, E-mail: jgyook-yonsei.ac.kr Abstract-- This paper presents a new power plane design m
Electromagnetic-Thermal Analysis for Inductances and Eddy Current Losses of On-Chip Spiral Inductors on Lossy Silicon Substrate
Kai Kang, Le-Wei Li, Said Zouhdi, Jinglin Shi, Wen-Yan Yin
Proceedings of the 1st European Microwave Integrated Circuits Conference Electromagnetic-Thermal Analysis for Inductances and Eddy Current Losses of On-chip Spiral Inductors on Lossy Silicon Substrate Kai Kang1, 2, 3, Le-Wei Li1, Saïd Zouhdi2, Jinglin Shi3 and Wen-Yan Yin4 1 2 Department of Electrical & Computer Engineering, National University of Singapore, Singapore 119260; LGEP-Supélec, Gif-S
A Sub-1 V 1.6 GHz CMOS VCO with 29% Tuning Range
Wang-Chi Cheng, Cheong-Fat Chan, Kong-Pang Pun, Chiu-Sing Choy
Proceedings of the 1st European Microwave Integrated Circuits Conference A Sub-1 V 1.6 GHz CMOS VCO with 29 % Tuning Range Wang-Chi CHENG, Cheong-Fat CHAN, Kong-Pang PUN and Chiu-Sing CHOY Department of Electronic Engineering, The Chinese University of Hong Kong, Shatin, N.T., Hong Kong SAR Email: {wccheng, cfchan, kppun, cschoy} -ee.cuhk.edu.hk Abstract--This paper presents the design and measur
Design of a Fully Integrated Switchable Transistor CMOS LNA for 2.1 / 2.4 GHz Application
Wang-Chi Cheng, Jian-Guo Ma, Kiat-Seng Yeo, Manh-Anh Do
Proceedings of the 1st European Microwave Integrated Circuits Conference Design of a Fully Integrated Switchable Transistor CMOS LNA for 2.1 / 2.4 GHz Application Wang-Chi CHENG(1), Jian-Guo MA(2), Kiat-Seng YEO(2) and Manh-Anh DO(2) (1) Department of Electronic Engineering, The Chinese University of Hong Kong, Shatin, N.T., Hong Kong SAR (2) School of Electrical and Electronic Engineering, Nanya
A Non-Quasi-Static, Relaxation-Time Small-Signal HEMT Model Compatible with Large-Signal Modeling
Wolfram C. Stiebler
Proceedings of the 1st European Microwave Integrated Circuits Conference A Non-Quasi-Static, Relaxation-Time Small-Signal HEMT Model Compatible with Large-Signal Modeling Wolfram C. Stiebler Raytheon RF Components, Andover, MA, 01810, USA Abstract -- A non-quasi-static, relaxation-time small-signal HEMT model is proposed that is fully compatible with largesignal modeling. The small-signal model i
Compact RF Modeling of Multiple-Gate MOSFETs
B. Iniguez, A. Lazaro, O. Moldovan
Proceedings of the 1st European Microwave Integrated Circuits Conference Compact RF Modeling of Multiple-Gate MOSFETs B.Iñiguez, A. Lázaro, O. Moldovan Dept. of Electronics, Electrics, and Automatic Engineering, Universitat Rovira i Virgili, 43007Tarragona, Spain. Fax. 34-977558521 Phone. 34-977558668 e-mail: benjamin.iniguez-urv.net Abstract -- We present a compact modeling scheme for multiple-g
Simplified RF-MEMS Switches Using Implanted Conductors and Thermal Oxide
Christian Siegel, Volker Ziegler, Bernhard Schonlinner, Ulrich Prechtel, Hermann Schumacher
Proceedings of the 1st European Microwave Integrated Circuits Conference Simplified RF-MEMS Switches Using Implanted Conductors and Thermal Oxide Christian Siegel1, Volker Ziegler1, Bernhard Schönlinner1, Ulrich Prechtel1 and Hermann Schumacher2 2 EADS Germany, Corporate Research Centre, Munich, D81663, Germany, University of Ulm, Dept. of Electron Devices and Circuits, Albert Einstein Allee 45,
Compact Electro-Thermal Modelling and Simulation of InP HBT Based on the Local Reference Concept
J. Ding, D. Linton, Derek Smith, Michael B. Steer
Proceedings of the 1st European Microwave Integrated Circuits Conference Compact Electro-thermal Modelling and Simulation of InP HBT Based on the Local Reference Concept J. Ding ×+ , D. Linton × , D. Smith * , M. Steer × The Institute of ECIT, Queens University Belfast, Northern Ireland Science Park, Queen's Road, Queen's Island, Belfast, BT3 9DT, UK Department of Electrical and Computer Engine
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