Proceedings of the 1st European Microwave Integrated Circuits Conference Enhanced Schottky Gate and Pulsed IV Characteristics of AlGaNGaN HEMT on Si with Gate-annealing and SiNX Passivation Jin-Cherl Her, Sung-Won Kim, Kyung-Chul Jang, Gyung-Seon Seol, Min-Koo Han, Jae-Eung Oh* and Kwang-Seok Seo Seoul National University, School of Electrical Engineering and Computer Science, San 56-1 Shillim-do

Proceedings of the 1st European Microwave Integrated Circuits Conference 40nm In0.7GaAs HEMTs with Novel HSQ Based T-gate Process Sung-Won Kim, Gyung-Seon Seol, Jin-Churl Her, Kyung-Chul Jang, and Kwang-Seok Seo Seoul National University, School of Electrical Engineering and Computer Science, San 56-1 Shillim-dong Kwanak-gu Seoul 151-742, Republic of Korea Tel: +82-2-877-0298, Fax: +82-2-887-6575

Proceedings of the 1st European Microwave Integrated Circuits Conference Broadband Active and Passive Balun Circuits: Functional Blocks for Modern Millimeter-Wave Radio Architectures Alberto Costantini, Ben Lawrence, Simon Mahon, James Harvey, Gerry McCulloch, Alexandre Bessemoulin Mimix Broadband Sydney Design Centre, Level 13, 80 Mount Street, North Sydney, NSW, Australia Abstract -- This paper

Proceedings of the 1st European Microwave Integrated Circuits Conference 4-8 GHz Low Noise Amplifiers using metamorphic HEMT Technology Matthew Kelly, Iltcho Angelov, J. Piotr Starski, Niklas Wadefalk, and Herbert Zirath Microwave Electronics Laboratory, Chalmers University of Technology, Gothenburg, SE-412 96, Sweden Abstract -- This paper describes two metamorphic high electron mobility transis

Proceedings of the 1st European Microwave Integrated Circuits Conference Advanced 3D Packaging using Novel Liquid Crystalline Polymer Based Substrates Camil-Daniel Ghiu, Sidharth Dalmia, Jack Vickers, Larry Carastro, Winston Czakon, Venky Sundaram*, George White Jacket Micro Devices, Atlanta, Georgia, 30308, USA * Packaging Research Center, Georgia Institute of Technology, Atlanta, Georgia, 30332

Proceedings of the 1st European Microwave Integrated Circuits Conference A 4.5-5.8 GHz Differential LC VCO using 0.35 m SiGe BiCMOS Technology Onur Esame, Ibrahim Tekin and Yasar Gurbuz Sabanci University, Faculty of Engineering and Natural Sciences, Tuzla, 34956, Istanbul, Turkey Tel: ++90(216) 483 9533, e-mail: yasar-sabanciuniv.edu Abstract -- In this paper, design and realization of a 4.55.8

Proceedings of the 1st European Microwave Integrated Circuits Conference Improved Modified Materka Model for Simulation of Pinch-Off Variation in PHEMT Devices. Paul M. White, Wolfram C. Stiebler and Philip C. Balas Raytheon RF Components, 362 Lowell Street, Andover, MA 01810 USA Abstract An improved Modified Materka I-V model for PHEMT devices is described which enables pinch-off variation to b

Proceedings of the 1st European Microwave Integrated Circuits Conference A Large-Signal Model of GaN HEMTs for Linear High Power Amplifier Design Endalkachew S. Mengistu and Günter Kompa Fachgebiet Hochfrequenztechnik, University of Kassel, Wilhelmshöhe Allee 73, D-34121 Kassel, Germany, Tel: +49-561-804-6528, Fax: +49-561-804-6529, E-Mail: mengistu.es-uni-kassel.de Abstract -- A nonlinear large-

Proceedings of the 1st European Microwave Integrated Circuits Conference Nonlinear and Memory Characterization of GaAs FET Devices and FET-Based Power Amplifier Circuits Jon Santiago1,*, Joaquín Portilla1, and Tomás Fernández2 1 Dept. of Electricity & Electronics, Univ. of the Basque Country, PO Box 644, 48080 Bilbao, Spain * lcbsafej-lg.ehu.es, Tel: +(34) 946013236, Fax: +(34) 946013071 2 Dept

Proceedings of the 1st European Microwave Integrated Circuits Conference A Novel 5-30GHz Voltage Controlled Variable Attenuator with High Linearity in a Low Cost SMD Compact Package N. Poitrenaud, B. Lefebvre, S. Tranchant, M. Camiade United Monolithic Semiconductors, route départementale 128 ­ BP46, 91401 Orsay Cedex, France email: nicolas.poitrenaud-ums-gaas.com ­ Ph. (33) 1 69 33 03 77 ­ Fax.