Proceedings of the 1st European Microwave Integrated Circuits Conference Low-Frequency Noise Measurements of Bipolar Devices Under High DC Current Density: Whether Transimpedance or Voltage Amplifiers A. A. Lisboa de Souza, J. -C. Nallatamby and M. Prigent XLIM ­ Dep. C2S2 ­ UMR CNRS 6172, 7 rue Jules Vales - 19100 ­ Brive (France) Phone:+33 555 867 303 Fax:+33 555 861 426 Email: antonio.desouza-

Proceedings of the 1st European Microwave Integrated Circuits Conference A distributed approach for millimetre-wave electron device modelling D. Resca1, A. Santarelli1, A. Raffo2, R. Cignani1, G. Vannini2 F. Filicori1, A. Cidronali3 1 University of Bologna ­ DEIS ­ Viale Risorgimento, 1 ­ 40136 Bologna ­ Italy, dresca-deis.unibo.it 2 University of Ferrara ­ Dept. of Engineering ­ Via Saragat, 1

Proceedings of the 1st European Microwave Integrated Circuits Conference A C-Band Oscillator MMIC with High Output Power, Low Harmonics, and Low Phase Noise using Passive Buffer Sanghoon Sim, and Songcheol Hong Department of Electrical Engineering and Computer Science (EECS) Division of Electrical Engineering of Korea Advanced Institute of Science and Technology (KAIST) 373-1, Guseong-dong, Yuseo

Proceedings of the 1st European Microwave Integrated Circuits Conference Ar Implantation, a Passivation Technique for High-Resistivity Silicon within the MCM-D Technology G. Posada(1), G. Carchon(1), P. Soussan(1), G.Poesen(1,3), B. Nauwelaers(2), W. De Raedt(1) (1) IMEC, Div. MCP, Kapeldreef 75, B-3001 Heverlee, Belgium. (2) K.U.Leuven, Div. ESAT-TELEMIC, Kadr. Mercierlaan 94, B-3001 Heverlee, B

Proceedings of the 1st European Microwave Integrated Circuits Conference A Low Noise and Low Power, SiGe-BiCMOS LNA for IEEE 802.11a Applications Mehmet Kaynak, Ibrahim Tekin, Ayhan Bozkurt and Yasar Gurbuz Sabanci University, Faculty of Engineering and Natural Sciences, Tuzla, 34956, Istanbul, Turkey Tel: ++90(216) 483 9533, e-mail: yasar-sabanciuniv.edu Abstract -- This paper presents a design

Proceedings of the 1st European Microwave Integrated Circuits Conference Advanced Neural Network Techniques for GaN-HEMT Dynamic Behavior Characterization G. Orengo1, P. Colantonio1, F. Giannini1, M. Pirola2, V. Camarchia2, S. Donati Guerrieri2 1 Electronics Engineering Dpt., Tor Vergata Univ., via Politecnico 1, 00133 Roma, Italy, orengo-uniroma2.it 2 Electronics Dpt, Politecnico, Cso. Duca de

Proceedings of the 1st European Microwave Integrated Circuits Conference InP-Based InAlAs/InGaAs Double-Gate Transistors Beyond Conventional HEMT's Limitations N. Wichmann, S. Bollaert, B. G. Vasallo, X. Wallart, G. Dambrine, A. Cappy IEMN-DHS, UMR CNRS 8520 ­ Cité Scientifique, Av. Poincaré, BP 60069, 59652 Villeneuve d'Ascq France Abstract -- We report on the design, fabrication and characteriz

Proceedings of the 1st European Microwave Integrated Circuits Conference 77GHz Low Noise Sub Block MMICs with 120 nm In0.4AlAs/In0.35GaAs Metamorphic HEMTs Sung-Won Kim, Dong-Hwan Kim, Jin-Churl Her, Kyung-Chul Jang, Woo-Yeol Choi, Young-Woo Kwon and Kwang-Seok Seo Seoul National University, School of Electrical Engineering and Computer Science, San 56-1 Shillim-dong Kwanak-gu Seoul 151-742, Repu

Proceedings of the 1st European Microwave Integrated Circuits Conference A 3-10GHz Broadband CMOS T/R Switch for UWB Applications K.-H PAO, C.-Y. HSU, H.-R. CHUANG, C.-L LU AND C.-Y CHEN Institute of Computer and Communication Engineering, National Cheng Kung University,Tainan, Taiwan, R.O.C Tel: +886 6 2757575~62374 Fax: +886 6 2748690, E-mail: chuang_hr-ee.ncku.edu.tw, http://empc1.ee.ncku.edu.

Proceedings of the 1st European Microwave Integrated Circuits Conference Performance Assessment of Nanoscale Multiple Gate MOSFETs (MuGFETs) for RF Applications Tao Chuan Lim, Abhinav Kranti, G. Alastair Armstrong Northern Ireland Semiconductor Research Centre, School of Electrical and Electronics Engineering, Queen's University Belfast, Ashby Building, Stranmillis Road, Belfast, BT9 5AH Northern