Proceedings of the 1st European Microwave Integrated Circuits Conference A Very Low Cost Ku-Band 2W Power Amplifier MMIC using a Plastic-Molded QFN Package Akira Akiyama, Tadayuki Shimura, Tomio Sato and Yuichi Hasegawa Eudyna Devices Inc., 1000 Kamisukiahara, Showa-cho, Nakakomagun, Yamanashi 409-3883, Japan Abstract -- A low cost molded MMIC in a QFN package is designed and fabricated for a Ku-

Proceedings of the 1st European Microwave Integrated Circuits Conference A Multi Channel Down-converter Module Exploiting Recent Advances in Multi layer RF Packaging Techniques S Rumer & M Thornber EADS Astrium Ltd, Anchorage Road, Portsmouth, PO3 5PU, England Tel: +44 02392 705064, E-mail: simon.rumer-astrium.eads.net Tel: +44 02392 708315, E-mail: martin.thornber-astrium.eads.net Abstract -- Re

Proceedings of the 1st European Microwave Integrated Circuits Conference An Electrothermal Model for GaInP/GaAs Power HBTs with Enhanced Convergence Capabilities O. Jardel+, R. Quéré+, S. Heckmann*, H. Bousbia+, D. Barataud+, E. Chartier**, D. Floriot** + XLIM MITIC, CNRS UMR 6615, Université de Limoges, 7, rue Jules Vallès, 19100 Brive, France *United Monolithic Semiconductor, domaine de Corbev

Proceedings of the 1st European Microwave Integrated Circuits Conference Advances in GaN-based discrete power devices for L- and X-band applications Joachim Würfl1, Reza Behtash1, Richard Lossy1, Armin Liero1, Wolfgang Heinrich1 and Günther Tränkle1 Klaus Hirche2, G. Fischer3 Ferdinand-Braun-Institut für Höchstfrequenztechnik (FBH), Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany, e-mail: Joachi

Proceedings of the 1st European Microwave Integrated Circuits Conference A Physics-Based Nonlinear Model of Microwave P-I-N Diode for CAD Emmanuel Gatard1 , Philippe Bouysse1, Rapha¨ l Sommet1 , Raymond Qu´ r´ 1 e ee Jean-Marc Bureau2, Pascal Ledieu2, Michel Stanislawiak3, Cl´ ment Tolant3 e 1 XLIM CNRS IUT GEII, 7 rue Jules Valles, 19100 Brive la Gaillarde, FRANCE, +33 555 867 301. emmanuel.gat

Proceedings of the 1st European Microwave Integrated Circuits Conference A High Performance 20-42 GHz MMIC Frequency Multiplier with Low Input Drive Power and High Output Power Sushil Kumar and Henrik Morkner Avago Technologies, 350 W. Trimble Road, San Jose, CA 95131, USA Abstract A 20-42GHz output frequency GaAs MMIC frequency doubler chip has been developed that requires low input drive power

Proceedings of the 1st European Microwave Integrated Circuits Conference An Ultra Compact C-Band 5-Bit MMIC Phase Shifter Based on All-Pass Network Kenichi Miyaguchi, Morishige Hieda, Masatake Hangai, Tamotsu Nishino, Norihiro Yunoue, Yoshinobu Sasaki, and Moriyasu Miyazaki Mitsubishi Electric Corporation 5-1-1 Ofuna, Kamakura-shi, Kanagawa 247-8501, Japan E-mail: Miyaguchi.Kenichi-aj.MitsubishiE

Proceedings of the 1st European Microwave Integrated Circuits Conference On-chip active gate bias circuit for MMIC amplifier applications with 100% threshold voltage variation compensation A.P. de Hek, E.B. Busking TNO Defence, Security and Safety, Oude Waalsdorperweg 63, 2509 JG The Hague, The Netherlands, Phone: 31.70.374.0409, Email: peter.dehek-tno.nl Abstract -- In this paper the design and

Proceedings of the 1st European Microwave Integrated Circuits Conference A novel high purity, highly efficient, broadband MMIC frequency multiplier implemented in metamorphic HEMT technology Andreas Ådahl and Herbert Zirath Department of Microtechnology and Nanoscience, Chalmers University of Technology, Sweden Phone: +46-(0)-31-772 50 49, Fax: +46-(0)-31-16 45 13 E-mail: andreas.adahl-mc2.chalme

Proceedings of the 1st European Microwave Integrated Circuits Conference GaAs Power pHEMT Characterization for Extracting Nonlinear Parameters of Drain Current by Harmonic Measurement Kuan-Yu Chen and Chien-Chang Huang Department of Electrical Engineering, Yuan Ze University 135, Yuan-Tung Rd., Chung-Li, Taoyuan 320, Taiwan TEL: 886-3-4638800 ext 2432 FAX: 886-3-4554264 E-mail: cch-saturn.yzu.edu