Proceedings of the 17th European Microwave Integrated Circuits Conference A Mixer-Like Nonlinear Analysis for GaN HEMT Supply-Modulated Power Amplifier at 3.8 GHz Lorenzo Pagnini, Giovanni Collodi, Alessandro Cidronali Department of Information Engineering, University of Florence, Italy {name.surname}-unifi.it Abstract ? A nonlinear analysis of a GaN HEMT supply-modulated power amplifier (SMPA) b

Proceedings of the 17th European Microwave Integrated Circuits Conference A 2.5-2.6 dB Noise Figure LNA for 39 GHz band in 22 nm FD-SOI with Back-Gate Bias Tunability L. Nyssens# , M. Rack#, S. Wane$, C. Schwan*, S. Lehmann*, Z. Zhao*, L. Lucci%, J. Lugo-Alvarez%, F. Gaillard%, J.-P. Raskin#, D. Lederer# # Université catholique de Louvain, Louvain-la-Neuve, Belgium $ eV-Technologies, Colombelles

Proceedings of the 17th European Microwave Integrated Circuits Conference A New Architecture of Broadband GaAs MMIC Balanced Mixer for Very High RF/IF Isolation for 0.5?18.5 GHz Signal Analysis Lorenzo Pagnini, Giovanni Collodi, Marco Passafiume, Alessandro Cidronali Department of Information Engineering, University of Florence, Italy {name.surname}-unifi.it Section IV we report the experimental

Proceedings of the 17th European Microwave Integrated Circuits Conference Structural Investigations on Leonardo da Vinci?s Mural Painting ?The Last Supper? with Terahertz FMCW and TDS Techniques Maris Bauer#1, Kaori Fukunaga?2, Andreas Keil#, Fabio Aramini*, M. Palazzo§, L. Dall?Aglio§, Fabian Friederich# # ? Fraunhofer Institute for Industrial Mathematics (ITWM), Germany National Institute of

Proceedings of the 17th European Microwave Integrated Circuits Conference Highly Integrated Real-time Imaging MIMO D-Band Radar for Industrial Applications S. Leuchs1, C. Krebs1, S. Gütgemann1, S. Wickmann1, J. Perske1, H. Cetinkaya1, N. Pohl1,2, B. Fischer3, E. Tolin4, M. Arias Campo4, S. Bruni4, J. Romstadt2, H. Papurcu2, T. Haschke5, T. Huge5 1 Fraunhofer Institute for High Frequency Physics

Proceedings of the 17th European Microwave Integrated Circuits Conference Ka-Band Wide Gain Control Range CMOS Variable Gain Amplifier Using PMOS for 5G Communications Dongin Min1, Jaeyong Lee2, Seonhye Jang3, Seongjin Jang4, Changkun Park5 IMS Lab, Soongsil University, Republic of Korea 1 dially98-soongsil.ac.kr, 2mirinae38-soongsil.ac.kr, 3seonhye5959-soongsil.ac.kr, 4jsj0613-soongsil.ac.kr, 5

Proceedings of the 17th European Microwave Integrated Circuits Conference A High-Power InP Resonant Tunnelling Diode Heterostructure for 300-GHz Oscillator Sources Davide Cimbri, Razvan Morariu, Afesomeh Ofiare, Edward Wasige High-Frequency Electronics group, Division of Electronics and Nanoscale Engineering, James Watt School of Engineering, University of Glasgow, UK davide.cimbri-glasgow.ac.uk

Proceedings of the 17th European Microwave Integrated Circuits Conference Broadband 8 W Ka-band MMIC Power Amplifier Using 100 nm GaN Technology Seifeddine Fakhfakh# , Samira Driad# , Philippe Fellon # , Manfred Madel* , Linh Trinh-Xuan* , Herv´e Blanck* , Marc Camiade# # United * United Monolithic Semiconductors SAS, France Monolithic Semiconductors GmbH, Germany Abstract ? The downsizing of t

Proceedings of the 17th European Microwave Integrated Circuits Conference Characterization of GaN Recovery Effects under High-Power Pulsed RF Stress M. van Heijningen, D.C.A. Ribeiro, A.P. de Hek, F.E. van Vliet TNO, The Netherlands Marc.vanHeijningen-tno.nl Abstract ? This paper discusses the characterization of GaN transistors or MMICs under pulsed high-power stress and their recovery behaviou

Proceedings of the 17th European Microwave Integrated Circuits Conference Polarisation Multiplex in 300 GHz Wireless Communication Link using Orthomode Transducer Simon Haussmann1, Dominik Wrana1, Benjamin Schoch1, Axel Tessmann2, Ralf Henneberger3, Ingmar Kallfass1 1 Institute of Robust Power Semiconductor Systems (ILH), University of Stuttgart, Germany 2 Fraunhofer Institute for Applied Solid