High Efficiency Multi-Layer Parasitic Microstrip Array Antenna on TEFLON Substrate Tomohiro Seki, Naoki Honma, Kenjiro Nishikawa, and Kouichi Tsunekawa NTT Corporation, NTT Network Innovation Laboratories, 1-1 Hikari-no-oka, Yokosuka-shi, Kanagawa 239-0847, Japan TEL: +81 46 859 5070, FAX: +81 46 855 1497, E-mail: t.seki-ieee.org Abstract This paper proposes a high efficiency multi-layer parasitic

A 5.5GHz, 25W GaAs Power-FET chip at 26V operation T.Yamamoto1, K.Inoue1, T.Igarashi1, S.Sano1, and S.Takase2 1 2 Eudyna Devices Inc., 1000 Kamisukiawara, Nakakoma-gun, Yamanashi, 409-3883, Japan Eudyna Engineering Inc., 1000 Kamisukiawara, Nakakoma-gun, Yamanashi, 409-3883, Japan channel layer, AlGaAs Schottky layer and a WSi/Au gate were employed. The asymmetrical (gamma-shaped) gate electrode

Low Voltage Operated Piezoelectric RF MEMS Switches for Advanced Handset Applications Jae Y. Park, Hee C. Lee, and Jong U. Bu Microsystem Group Materials and Devices Laboratory LG Electronics Institute of Technology 16 Woomyeon-Dong Seocho-Gu, Seoul 137-724, Korea Tel.: +82-2-526-4550, Fax: +82-2-3461-3508, e-mail: jpark41-lge.com Abstract-In this paper, fully integrated piezoelectrically actuated

Low-cost, Active Frequency-Doubler MMIC in SMT Package for 6-20GHz Commercial Applications Sushil Kumar, Lik-Khai Chia and Henrik Morkner Agilent Technologies, Inc. 350 W. Trimble Road, San Jose, California, 95131 USA, Phone: (408) 435-6513, FAX: (408)435-4801 Email: henrik_morkner-agilent.com Abstract ­ This paper describes the development of a SMT-packaged 6-20GHz frequency-doubler MMIC. The fre

Ultra-Wideband Monolithic Microwave Integrated Circuit Solutions in SiGe and GaAs Technology Viktor Krozer, Tom K. Johansen, Torsten Djurhuus, and Jens Vidkjær Technical University of Denmark, Oersted·DTU, Department of Electromagnetic Systems, Oersteds Plads 348, 2800 Kgs. Lyngby, Denmark, Phone:+45-45253769, E-mail:vk-oersted.dtu.dk Abstract-- Ultra-wideband analog monolithic microwave integrat

A Broadband Active Harmonic Load-Pull Setup with a Modulated Generator as Active Load Holger Arthaber, Markus L. Mayer and Gottfried Magerl Vienna University of Technology, Institute of Electrical Measurements and Circuit Design Gußhausstraße 25/354, A-1040 Vienna, Austria, +43 1 58801 35420, holger.arthaber-tuwien.ac.at Abstract-- This paper proposes an active harmonic load-pull setup which allo

An Array-Based Design Methodology for the Realisation of 94GHz MMMIC Amplifiers K. Elgaid, H. McLelland, S.Ferguson, X. Cao, E. Boyd, D. Moran, S. Thoms, H. Zhou, C.D.W. Wilkinson, C.R. Stanley, I. G. Thayne Nanoelectronics Research Centre, Department of Electronics and Electrical Engineering University of Glasgow, Glasgow, G12 8LT, Scotland, United Kingdom Phone: + 44 141 330 6678, Fax: + 44 141

Analysis of High-Speed Traveling Wave Photodetectors Using Time-Domain TLM Method Damir Pasalic and Rüdiger Vahldieck Swiss Federal Institute of Technology, IFH, Gloriastrasse 35, CH-8092 Zurich, Switzerland Tel: +41-1-632 4860, Fax: +41-1-632 1198, E-mail: dpasalic-ifh.ee.ethz.ch Abstract -- The time-domain TLM method was used for rigorous analysis of low-temperature-grown GaAs based TWPDs. The a

Multi­Finger RF MEMS Variable Capacitors for RF Applications Hariharasudhan Kannan, Balaji Lakshminarayanan and Thomas Weller Center for Wireless and Microwave Information Systems Department of Electrical Engineering, University of South Florida, Tampa, FL E­mail: kannan-eng.usf.edu Abstract ­ This paper presents a digital type RF MEMS variable capacitor with a tuning range on the order of 10:1. T

MEMS Tunable Planar Inductors Using DC-Contact Switches S. Balachandran1, B. Lakshminarayanan1, T. Weller1, and Matthew Smith2 1 Electrical Engineering Department, University of South Florida, Tampa 33620, USA 2 Raytheon Systems, St. Petersburg, FL, USA Abstract -- This paper presents a tunable MEMS inductor that is designed to operate from 5-30GHz on a 500µm thick quartz substrate. Series cantil