EuMC: RF Power Performance of GaAs MOSFETs with Al_2O_3 Gate Dielectric Grown by Atomic Layer Deposition
P.D. Ye, B. Yang, K.K. Ng, J. Bude, G.D. Wilk, S. Halder, Marvin N. Marbell, T. Hierl, James C.M. Hwang
RF Power Performance of GaAs MOSFETs with Al2O3 Gate Dielectric Grown by Atomic Layer Deposition
P.D. Ye, 1 B. Yang, 1 K.K. Ng, 1 J. Bude, 1 G.D. Wilk,2 S. Halder, 3 M. Marbell, 3 T. Hierl, 3 and J.C.M. Hwang3
Agere Systems, 555 Union Blvd., Allentown, PA 18109 USA ASM America, 3440 E. University Dr., Phoenix, AZ 85034 USA 3 Lehigh University, 5 E. Packer Ave., Bethlehem, PA 18105 USA
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