LOW-COST, LOW-MASS LTCC DOWN CONVERTER FOR COMMUNICATION SATELLITE PAYLOADS M. C. Comparini, J. R. Linkowski, P. Montanucci, E. Pizzuti, A.Suriani, F. Vasarelli Alenia Spazio S.p.A. ­ Via Saccomuro 24, 00131 Rome, Italy Phone +39 06 41512583 ­ fax +39 06 41512507 email j.linkowski-roma.alespazio.it $EVWUDFW 7KLV SDSHU GHVFULEHV D ORZ FRVW ORZ PDVV GRZQ FRQYHUWHU IRU FRPPXQLFDWLRQ VDWHOOLWH SD\OR

Multifunction MMIC For Miniaturized Solid State Switch Matrix T. Cavanna, M. Feudale, P. Ranieri, A. Suriani. Alenia Spazio S. p. A. Via Saccomuro 24, 00131 Rome Italy Phone: 39-6-4151-2515. Fax: 39-6-4151-2507. refer. e-mail: m.feudale-roma.alespazio.it Abstract - This paper describes a new multifunction MMIC expressly designed for a reconfiguration matrix equipment. This MMIC has been developed

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Micromachined Strip Line with SU-8 as the Dielectric Ricardo Osorio, Mona Klein, H. Massler*, Jan G. Korvink Albert-Ludwigs-Univ., IMTEK, Georges-Koehler-Allee 103, D-79085 Freiburg, Germany, Tel.: +49 761 203-7486 * Fraunhofer IAF, Tullastrasse 72, 79108 Freiburg, Germany, Tel.: +49 761 51590 For the first time this paper presents strip Abstract lines fabricated using SU-8 as the dielectric mate

L-Band MMICs for Space-based SAR system M.W. van der Graaf1, M. van Wanum1, A.P.M. Maas1, E.M. Suijker1, A.Knight2, M. Ludwig3 1: TNO Physics and Electronics Laboratory, P.O. Box 96864, 2509 JG, The Hague, The Netherlands, Email: vandergraaf-fel.tno.nl 2: EADS Astrium Ltd, Anchorage Road, Portsmouth PO3 5PU, UK 3: The European Space Research and Technology Centre P.O. Box 299, 2200 AG, Noordwijk,

A Variable gain MMIC amplifier Anowar Masud*, Mattias Ferndahl*, Herbert Zirath*,# * Chalmers University of Technology, Microwave Electronics Laboratory, 412 96 Gothenburg, Sweden # Ericsson AB, Microwave and High Speed Research Center, 431 84 Molndal, Sweden Abstract -- A variable gain MMIC amplifier block is demonstrated. A maximum gain of 13 dB with a control range of 13 dB is obtained at 2.5GH

Pd/In-based Ohmic Contacts to n-GaAs Jan Zlámal, Vladimír Myslík, Petr Machá Institute of Chemical-Technology in Prague, Department of Solid State Engineering, Technická 5, Prague 6, 166 28, Czech Republic, +420 2 2435 5157 Abstract -- The contribution deals with the performance of doping element/Pd/In contact structures on n+-GaAs wafers where Ge, Sn or Si were employed as doping elements. The c

Low Noise Metamorphic HEMTs with Reflowed Submicron T-Gate Y. C. Lien1, E. Y. Chang1*, H. C. Chang1, L. H. Chu1, K. W. Huang2, H. M. Lee1, C. S. Lee1, S. H. Chen1, P. T. Shen1 National Chiao Tung University, Department of Materials Science and Engineering, 1001 Ta-Hsueh Road, Hsinchu 300, Taiwan, R.O.C. 2 National Nano Device Laboratories, 1001-1 Ta-Hsueh Road, Hsinchu 30050, Taiwan, R.O.C. * Phon

fmax = 433GHz from 0.1 -gate InGaAs/InAlAs/GaAs Metamorphic HEMTs Bok-Hyung Lee, Byeong-Ok Lim, Mun-Kyo Lee and Jin-Koo Rhee Millimeter-wave INnovation Technology research center (MINT), Dongguk University, Pil-dong, Chung-gu, Seoul, 100-715, Korea, Abstract -- In this work, we present the characteristics of the 0.1 gate length InGaAs/InAlAs/GaAs metamorphic high electron mobility transistors (MH

Low noise amplifiers in SiGe hetero-junction bipolar process using reduced pressure chemical vapor deposition Bongki Mheen1,2, Chan Woo Park, Sang Hoon Kim, Jin-Yeong Kang, Songcheol Hong2 Basic Research Laboratory, Electronics and Telecommunications Research Institute, 161 Gajeong-Dong, Yuseong-Gu, Deajon, Republic of Korea Tel: +82-42-860-6217, Fax: +82-42-860-6183, Email: mheen-ieee.org 2 Dept.