Accurate Analysis of Polarization Coupling in Laminated Multilayered Thin Film Optical 3-D Waveguides A. Massaro, V. Mancini, A. Di Donato and T. Rozzi Departement of Electronics and Automatics, University of Ancona, Via Brecce Bianche, 60131, email: MassaroAle-libero.it, a.didonato-ee.unian.it The five-component solution for both LSE and LSM can be found according to: µ Ex = 0 h + x y e I

Future Trends in Si Technology/ICs for RF Applications Mario Paparo 1 , Pietro Erratico 2, Bruno Murari 2 1 2 STMicrolectronics , Stradale Primosole 50, 95121 Catania , Italy, +39 095 740 4101 STMicrolectronics , Via Tolomeo 1, 20010 Cornaredo ( Mi ) , Italy +39 02 93519 307 In the last year two additional factors characterized this market segment yielding in a renewed push for better and cheaper

Materials to Microsystems: Heterogeneous Integration Technologies April S. Brown1, Nan Marie Jokerst1, Martin A. Brooke1, Thomas Kuech2, T.S. Kuan3 2 Duke University, Department of ECE, Durham, NC, USA University of Wisconsin-Madison, Department of Chemical Engineering, Madison, WI, USA 3 SUNY-Albany, Department of Physics, Albany, NY, USA such as strained layers on InGaAs substrates. Examples of

CONFERENCE INFORMATION Welcome from the Chairman of the GAAS 2003 As the chairman of GAAS 2003, it is a great pleasure for me to express my welcome to all participants of the conference on behalf of the GAAS Technical Progamme Committee, and the GAAS Steering Committee. The conference will cover two full days (Monday, Oct. 6, and Tuesday, Oct. 7) plus one day (Wednesday Oct. 8) dedicated to worksh

InP Bipolar Transistors: High Speed Circuits and Manufacturable Submicron Fabrication Processes M. Rodwell1, D. Scott1, M. Urteaga1,2 , M. Dahlström1, Z. Griffith1, Y. Wei1, N. Parthasarathy1, YM Kim1, R. Pierson2 , P. Rowell2, B. Brar2 1 ECE Department, University of California, Santa Barbara, 93106, USA, 805 893 3244, rodwell-ece.ucsb.edu 2 Rockwell Scientific Company, Thousand Oaks, CA 91360,

PAPERS BY AUTHOR A I Q Y B J R Z C K S D L T E M U F N V G O W H P X Click to find author in index « Previous Main Index Continue » PAPERS BY AUTHOR A Abdolvand, R. Abele, P. Acciari, G. Accillaro, C. Ådahl, A. Aguilar, M. E. Ahn, H. Aitchison, C. S. Alfredson, M. Alonso, J. I. Anakabe, A. Angelov, I. Aniel, F. Antar, Y. M. M. Araki, G. Arena, M. Auxemery, P. Ayazi, F. B Bacon, A. B

An overview of low noise devices and associated circuits for 100-200 GHz space applications Gilles Dambrine1, Thierry Parenty1, Sylvain Bollaert1, Henri Happy1, A. Cappy1, Javier Mateos2, Tapani Nahri3, Jean Claude Orlhac4, Marc Trier4, Pierre Baudet5, Patrice Landry6. I.E.M.N., Avenue Poincaré, BP 69, F-59652, Villeneuve d'Ascq, France, 33 3 20 19 78 61. 2 Departamento de Física Aplicada Universi

InP HEMTs and HBVs for Low Noise and Ultra-High Speed: Device and Circuit Research at Chalmers University of Technology Herbert Zirath, Jan Grahn, Niklas Rorsman, Anders Mellberg, Jan Stake, Iltcho Angelov and Piotr Starski Chalmers University of Technology, Microwave Electronics Laboratory, MC2, SE-412 96, Göteborg, Sweden Abstract -- An overview is given of the Chalmers research activities in In

Integrated Circuits Based on 300 GHz fT Metamorphic HEMT Technology for Millimeter-Wave and Mixed-Signal Applications Michael Schlechtweg, Axel Tessmann, Arnulf Leuther, Christoph Schwörer, Manfred Lang, Ulrich Nowotny, Otmar Kappeler Fraunhofer Institute of Applied Solid-State Physics, Tullastrasse 72, 79108 Freiburg, Germany Phone: +49-761-5159-534, Fax:+49-761-5159-565, email: michael.schlechtw

Advanced III-V HEMT MMIC Technologies for Millimetre-Wave Applications Iain Thayne, Euan Boyd, Xin Cao, Khaled Elgaid, Martin Holland, Helen McLelland, Fiona McEwan, Douglas Macintyre, David Moran, Colin Stanley, Stephen Thoms Nanoelectronics Research Centre, Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow G12 8LT, Scotland, UK. Tel : +44 141 330 3859 e-mail :