A New Methodology to Enable Parameterized Cell Transfer between Microwave CADs Shinichi Fujimoto, Hiroaki Shuto, Mitsuhiro Matsuura, Kazuya Yamamoto, Takahide Ishikawa, Makio Komaru, Yoshio Matsuda High Frequency & Optical Semiconductor Division, Mitsubishi Electric Corporation 4-1 Mizuhara, Itami, Hyogo 664-8641, Japan Tel: +81-727-84-7385, Fax: +81-727-80-2694, E-mail: sfujimot-lsi.melco.co.jp

Transcapacitances and Bias Dependent Time Delay and Base Resistance Expressions for Accurate Large Signal Modeling of HBTs A. Issaoun1, D. Dousset2, A. B. Kouki1, F. M. Ghannouchi2 2 Ecole de Technologie Supérieure, 1100 Notre-Dame St. W., Montréal, Canada, H3C 1K3 Ecole Polytechnique de Montréal, P.O. Box 6090, su. Centre-ville, Montréal, Canada, H3C 3A7 Using these expressions along with the DC

Optimal Parameter Extraction Scheme of Current Sources and Bias Dependent Elements for HBT by searching the whole unknown Parameter Space Youngsuk SuH1, I. S. Kim2, and J. S. Song2 2 Yeungnam University, Department of EECS, Kyongsan, 712-749, South Korea, 82-53-810-2585 Korea Electrotechnology Research Institute, Electric & Magnetic Device Research Group, ChangWon, 641-600, South Korea, 82-55-280

Substrate Effects in SiGe HBT Modeling Tom K. Johansen , Jens Vidkj r , Viktor Krozer , Technical University of Denmark, Oersted-DTU, Department of Electromagnetic Systems, Oersteds Plads 348, 2800 Kgs. Lyngby, Denmark,Phone:+45-45253770, E-mail:tkj-oersted.dtu.dk ¡ ¢ Abstract-- This paper reports on a direct parameter extraction method for SiGe Heterojunction Bipolar Transistors (HBT's). U

Comparison of a New Modified Gummel-Poon Model and VBIC for AlGaAs/GaAs HBTs A. Issaoun1, D. Dousset2, A. B. Kouki1, F. M. Ghannouchi2 2 Ecole de Technologie Supérieure, 1100 Notre-Dame St. W., Montréal, Canada, H3C 1K3 Ecole Polytechnique de Montréal, P.O. Box 6090, su. Centre-ville, Montréal, Canada, H3C 3A7 1 -- A new modified Gummel-Poon (MGP) Abstract based model has been developed and tes

Large-Signal Modeling of SiGe HBTs Including a New Substrate Network Extraction Method Umut Basaran, Manfred Berroth Institute of Electrical and Optical Communication Engineering, University of Stuttgart, Pfaffenwaldring 47, 70327, Stuttgart, Germany Tel : 49 711 685 7918 / Fax : 49 711 685 7900 / E-mail : basaran-int.uni-stuttgart.de Abstract--Large-signal modeling results of SiGe HBTs with HICU

Characterizing the Linearity Sweet-Spot Evolution in FET Devices Emigdio Malaver1,2, Jos´ Angel Garc´a1, Antonio Taz´ n1, Angel Mediavilla1 e i o University of Cantabria, Department of Communication Engineering, Av de Los Castros, 39005 Santander, Spain, E-Mail: emalaver-unican.dicom.es 2 University of Los Andes, Department of Electronic and Communications, Av Tulio Febres Cordero, 5101 M´ rida,Ve

Harmonic Distortion Characterization of SOI MOSFETs B. Parvais1, A. Cerderia2 , D. Schreurs3 and J.-P. Raskin1 1 Universit´ catholique de Louvain, Microwave Laboratory, Place du Levant, 3 ­ B-1348 Louvain-la-Neuve, Belgium e Tel.: +32 (0)10 472310; fax : +32 (0)10 478705; e-mail : parvais-emic.ucl.ac.be 2 Dept. de Ingenieria Electrica, SEES, CINVESTAV - IPN, 07300 Mexico 3 Telecommunications and

Neural-Based Nonlinear Device Models for Intermodulation Analysis F.Giannini1, P.Colantonio1, G.Leuzzi2, G.Orengo1, A.Serino1 1 Dipartimento di Ingegneria Elettronica - Università "Tor Vergata" - via Politecnico 1 - 00133 Roma - Italy ­ tel. +390672597345 ­ fax 7343(53) - e_mail: orengo-ing.uniroma2.it 2 Dipartimento di Ingegneria Elettrica ­ Università di L'Aquila ­ Monteluco di Roio ­ L'Aquila

Influence of dispersive effects on large-signal models based on differential parameter integration G.Zucchelli1, A.Santarelli1, A.Raffo2, G.Vannini2, F.Filicori1 1 Department of Electronics, University of Bologna, Viale Risorgimento 2, 40136 Bologna, Italy, e-mail: gzucchelli-deis.unibo.it, asantarelli-deis.unibo.it, ffilicori-deis.unibo.it. 2 Department of Engineering, University of Ferrara, Via