InP based double heterojunction bipolar transistor with carbon doped GaAsSb:C base grown by LP-MOVPE S. Neumann, W. Prost, F.-J. Tegude Solid State Electronics Department, University Duisburg-Essen, Lotharstrasse 55, ZHO, 47048 Duisburg, Germany, email: neumann-hlt.uni-duisburg.de Phone: ++49 (0)208 379-3879, Fax: ++49 (0)208 379-3400 Abstract -- We present the growth of highly carbon doped GaAsSb

A Scalable PHEMT Model Taking Into Account Electromagnetic and Electro-Thermal Effects A. Cidronali, G. Collodi, C. Accillaro, C. Toccafondi, G. Vannini1, A. Santarelli2, G. Manes Dept. Electronics and Telecommunications, University of Florence, V.S.Marta,3 Florence 50139 Italy, 1 Department of Engineering, University of Ferrara, Via Saragat 2, 44100, Ferrara, Italy 2 DEIS, University of Bologna,

The Effects of Extended Depletion Region on Noise Modeling of HEMT's Meena Mishra, R.Muralidharan, Harsh, S.S. Islam*and Mukunda B. Das+ * Solid State Physics Laboratory, Timar Pur, Delhi-110054. Department of Applied Sciences and Humanities, Jamia Millia Islamia, New Delhi-110052 Mukunda B. Das is an Emeritus Professor of Electrical Engineering, The Pennsylvania State University, University Park

11th GAAS Symposium - Munich 2003 243 244 11th GAAS Symposium - Munich 2003 11th GAAS Symposium - Munich 2003 245 246 11th GAAS Symposium - Munich 2003 

A novel coupled physics-based electromagnetic model of semiconductor traveling-wave structures for RF and optoelectronic applications F. Bertazzi, F. Cappelluti, F. Bonani, M. Goano, G. Ghione Politecnico di Torino, Dipartimento di Elettronica and CERCOM, Corso Duca degli Abruzzi 24, I-10129 Torino, Italy, Phone +39 011 564 4140 Abstract-- The design of traveling-wave structures for highspeed ana

Physics-Based Device Simulation of Lag and Power Compression in GaAs FETs D. Kasai, Y. Kazami, Y. Mitani and K. Horio Faculty of Systems Engineering, Shibaura Institute of Technology 307 Fukasaku, Minuma-ku, Saitama 337-8570, Japan Abstract -- Two-dimensional transient simulation of GaAs FETs are performed in which substrate traps, surface states and impact ionization of carriers are considered. T

An SiGe/Si Heterojunction Phototransistor for Opto-Microwave Applications: Modeling and first Experimental Results J.L. Polleux1, F. Moutier1, A.L. Billabert1, C. Rumelhard1, E. Sönmez2, H. Schumacher2 1 2 ESYCOM, Cité Descartes, BP 99, 93162 Noisy-le-Grand Cedex, France, +33.1.45.92.67.68 Ulm University, Dept. of Electron Devices & Circuits, Germany, D-89069 Ulm, Germany then, the constraint eff

A Monolithically Integrated InP-Based HBT and p-i-n Photodiode Using New Stack-Shared Layer Scheme Moonjung Kim, Jung-Ho Cha, Seong-Ho Shin, Soo-Kun Jeon, Jaeho Kim, and Young-Se Kwon Korea Advanced Institute of Science and Technology (KAIST), Dept. of EECS, 373-1 Guseong-dong Yuseong-gu, 305-701 Daejeon, Republic of Korea, +82-42-869-8559 Abstract -- New stack-shared layer scheme has been develop

A 75 GHz Current Mode Logic Static Frequency Divider Realized in a Commercially Available InP Process Thomas E. Collins III1, Andrea Betti-Berutto2, Stephen I. Long1 1 University of California Santa Barbara, ECE Department, Engineering I, Santa Barbara, CA 93117, (805) 893-4353 2 iTerra Communications, 1585 Reliance Way, Fremont, CA 94539, (510) 657-1751 Abstract -- This work presents the fastes

20 Gbit/s Decision Feedback Loop for Optical Communications Zheng Gu1, Andreas Thiede1, Lothar Möller2 University of Paderborn, Dept. of High-Frequency Electronics, Warburger Str. 100, 33098 Paderborn, Germany, +49 5251 60 3039, zhenggu-hrz.upb.de 2 Lucent Technologies, 791 Holmdel-Keyport RD, Holmdel, NJ 07733-0400, United States, +1 732 888 7237 Abstract -- A new concept for a high-speed data de