Fully-integrated wideband TTD core chip with serial control F.E. van Vliet1, M. van Wanum1, A.W. Roodnat1, M. Alfredson2. 1: TNO Physics and Electronics Laboratory, P.O. Box 96864, 2509 JG, The Hague, The Netherlands, Email: vanvliet-fel.tno.nl 2: Swedish Defence Research Agency (FOI), P.O. Box 1165, 581 11 Linköping Sweden. The design and performance of a fully-integrated wideband TTD core chip i

A Fast AM/AM and AM/PM Characterization Technique Gianluca Acciari, Paolo Colantonio, Marco De Dominicis, Massimiliano Rossi Department of Electronic Engineering, University of Rome "Tor Vergata" Via del Politecnico 1 00133 Rome (Italy) tel. +390672597346 fax +390672597343 acciari-uniroma2.it Abstract ­ In this paper a novel AM/AM and AM/PM power amplifier characterization technique is presented,

Theoretical and Experimental Investigations on Nonlinear Capacitance and Loading Effects on Power PHEMT's Linearity S. Forestier, T. Gasseling*, P. Bouysse, D. Barataud*, R. Quere, J.M. Nebus* IRCOM, CNRS, Université de Limoges, IUT GEII, 7 rue Jules Vallès, 19100 BRIVE, France *IRCOM, CNRS, Université de Limoges, 123 Av. Albert Thomas, 87060 LIMOGES, France Abstract-- This paper presents a theor

Device-level Intermodulation Distortion Control on III-V FET's J. A. García, E. Malaver, L. Cabria, C. Gómez, A. Mediavilla, A. Tazón University of Cantabria, Dept. of Communication Engineering, Avda. Los Castros s/n, 39005, Santander, SPAIN, Phone: +34-942-200887, Email: jangel-ieee.org Abstract -- Highly linear and efficient amplification is currently a hot topic in the RF/microwave community.

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An Integrated View of Nonlinear Distortion Phenomena in Various Power Amplifier Technologies Pedro Miguel Cabral, Nuno Borges Carvalho and José Carlos Pedro Instituto de Telecomunicações - Universidade de Aveiro, Aveiro, Portugal, +351 234377900 Abstract - This paper presents an integrated view of nonlinear distortion in various power amplifier, PA, technologies. Using very weak assumptions, it sh

A non-linear equivalent circuit model for MOSFETs valid for DC, small and large-signal sim­ nlations of high freqnency circuit design is presented. The model is valid for a wide range of bias conditions and is globally continuons. Capacitances are derived from a single charge model and charge conservation is taken into acconnt. Simnlations of the model, following parameter extrac

RF and IF mixer optimum matching impedances extracted by large-signal vectorial measurements A. Cidronali1, G. Loglio1, J. Jargon3, K.A. Remley3, I. Magrini1, D.DeGroot3, D. Schreurs4, K.C. Gupta2, G. Manes1 Dept. Electronics and Telecommunications University of Florence, Florence 50139 Italy; acidronali-ing.unifi.it; fax: +39.055.494569 ; tel: +39.055.494569 2 University of Colorado at Boulder, D

An Improved GaAs FET Nonlinear Model Suitable for Intermodulation Analysis of Amplifiers, Switches and Resistive Mixers J.R. Loo-Yau, J. E. Zúñiga-Juárez, F. I. Hirata-Flores and J.A. Reynoso-Hernández Centro de Investigación Científica y de Educación Superior de Ensenada (CICESE) División de Física Aplicada, Km. 107 Carretera Tijuana-Ensenada, 22860 Ensenada, B.C. México; emails: rloo-cicese.mx,

Three-Dimensional Electromagnetic Approach to the Modeling of Linear Field Effect Transistors Marco Farina and Tullio Rozzi Dipartimento di Elettronica ed Automatica, University of Ancona, Ancona, 60131, Italy, m.farina-ee.unian.it Abstract -- In this contribution we introduce a 3D electromagnetic approach to the modeling of active devices under the small-signal hypothesis. The proposed technique