The First 0.15um MHEMT 6"GaAs Foundry Service: Highly Reliable Process for 3 V Drain Bias Operations M. Chertouk, W. D. Chang, C. G. Yuan, C. H. Chen, D. W. Tu, WIN Semiconductors Corp. N 69 Technology 7th Rd, Hwaya Technology Park, Kuei Shan Hsiang, Tao Yuan Shien, Taiwan (333) Email: chertouk-winfoundry.com Lattice matched InAlAs/InGaAs/InP HEMTs have performance advantages over more commonly u

Microwave Circuits Based on Negative Refractive Index Material Structures Christophe Caloz, Atsushi Sanada, and Tatsuo Itoh University of California, Los Angeles, Department of Electrical Engineering, 405 Hilgard Avenue, CA 90095, Los Angeles, USA, 310-206-1710, caloz-ee.ucla.edu Abstract -- The paper presents the fundamentals of composite right/left-handed (CRLH) transmission lines and materials,

Spaceborne Synthetic Aperture Radar (SAR) Systems: State of the Art and Future Developments Alberto Moreira and Gerhard Krieger German Aerospace Center (DLR) Microwaves and Radar Institute, D-82230 Wessling, Germany Email: alberto.moreira-dlr.de ABSTRACT -- This paper first summarizes the state of the art in spaceborne SAR systems and applications. The second part of this paper gives an overview o

A SiGe HEMT Mixer IC with Low Conversion Loss I. Kallfass, F. Gruson, P. Abele, K. Michelakis*, T. Hackbarth**, K.-H. Hieber**, J. Müller**, H. Schumacher Department of Electron Devices and Circuits, University of Ulm Albert-Einstein-Allee 45, 89081 Ulm, Germany ikall-ebs.e-technik.uni-ulm.de * Department of Electrical and Electronic Engineering, Imperial College London London SW7 2AZ, UK ** Daiml

A 5.8 GHz Mixer using SiGe HBT Process Sang-Heung Lee, Ja-Yol Lee, Seung-Yun Lee, Chan Woo Park, Sang Hoon Kim, Hyun-Chul Bae, Jin-Yeong Kang, and Kyoung-Ik Cho SiGe Devices Team, Electronics and Telecommunications Research Institute, Republic of Korea Abstract -- DSRC provides high speed radio link between Road Side Equipment and On-Board Equipment within the narrow communication area. In this p

Integrated receiver components for low-cost 26 GHz LMDS applications using an 0.8 m SiGe HBT technology E. S¨ nmez, A. Trasser, P. Abele, K. -B. Schad and H. Schumacher o Dept. of Electron Devices and Circuits, University of Ulm, D-89069 Ulm, Germany Email: esoenmez-ebs.e-technik.uni-ulm.de Phone: +49 731 50-31584 I. I NTRODUCTION The emergence of Local Multipoint Distribution Services will ope

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A 23 GHz Active Mixer with Integrated Diode Linearizer in SiGe BiCMOS Technology Mingquan Bao1, Yinggang Li1 and Andreia Cathelin2 1 Ericsson AB, Ericsson Research, MHSERC, Flöjelbergsgatan 2A, 43184 Mölndal, Sweden, Tel: +46 31 7472057 2 STMicroelectronics, Central R&D, 38926 Crolles, France degeneration are utilized to improve the linearity and the input impedance match. The resistors and induc

A Simplified Approach for Quasi-linear Power Amplifier Distortion Evaluation Alberto Santarelli1, Rudi Paolo Paganelli2, Alberto Costantini1, Giorgio Vannini3, Fabio Filicori1 1 University of Bologna, Department of Electronics, Viale Risorgimento 2, 40136 Bologna, Italy, +390512093039 2 IEIIT-CNR, Department of Bologna, Viale Risorgimento 2, 40136 Bologna, Italy, +390512093845 3 University of Fer

Flip-Chip Integration of Power HEMTs: A Step Towards a GaN MMIC Technology Kay Seemann , Suitbert Ramberger , Axel Tessmann , R¨ diger Quay , u Joachim Schneider , Markus Rießle , Herbert Walcher , Michael Kuri , Rudolf Kiefer , Michael Schlechtweg Kay Seemann formerly with the Fraunhofer IAF is now with the University of Erlangen, Department of Electrical Engineering, Cauerstrasse 9, 91058 Erla