Biasing Circuits for Voltage Controlled GSM Power Amplifiers André van Bezooijen1 , Dima Prikhodko1 and A.H.M. van Roermund2 2 Philips Semiconductors, Gerstweg 2, 6534 AE Nijmegen, The Netherlands Eindhoven University of Technology, Den Dolech 2, 5600 MB Eindhoven, The Netherlands 1 Abstract -- In GSM phones voltage controlled power amplifiers are used to vary the output power. Inaccuracies in

10 W High Efficiency 14V HBT Power Amplifier for Space Applications N. LE GALLOU* , J.F.VILLEMAZET* ,B. COGO*, J.L CAZAUX*, A. MALLET**, L. LAPIERRE ** * ALCATEL SPACE, 26 Av. JF Champollion, 31037 Toulouse cedex, FRANCE ** CNES (French Space Agency), 18 Av. E. Belin 31401 Toulouse cedex 4, France e-mail : Nicolas.Le-Gallou-space.alcatel.fr / Fax : +33 5 3435 6947 http://www.alcatel.com/space Abst

Mobile Phone Power Amplifier Linearity and Efficiency Enhancement Using Digital Predistortion N. Ceylan1, J.E. Mueller1, T. Pittorino1, R. Weigel2 1 Infineon Technologies, Secure Mobile Solutions, Kastenbauerstr. 2, 81677 Munich, Germany, Phone:+498923420839 2 University of Erlangen, Department of Technical Electronics, Cauerstr. 9, 91058 Erlangen, Germany, Phone:+4991318527195 this purpose AM-AM

Reliability Overview of RF MEMS Devices and Circuits S.Melle , F.Flourens , D.Dubuc , K.Grenier , P.Pons , F.Pressecq , J.Kuchenbecker , 3 1 1 J.L.Muraro , L.Bary and R.Plana 2 1 1 1 1 1 2 2 LAAS-CNRS 7 avenue du Colonel Roche, 31077 Toulouse, France CNES Toulouse, 18 avenue Edouard Belin 31077 Toulouse, France 3 Alcatel Space Industries, 26 Av J.F Champollion, Toulouse, France A 1 3 - #

GaAs MEMS for Millimeter Wave Communications Alexandru Muller1, George Konstantinidis2, Dan Neculoiu1 and Robert Plana3 IMT Bucharest, 32B, Erou Iancu Nicolae Street, 72996, Bucharest, Romania, Phone: +40.21.4908581 2 FORTH-IESL-MRG, PO Box 1527, Heraklion, Greece, Phone: +30.2810.394103 3 LAAS-CNRS Toulouse, 7, Av Colonel Roche, 31077 Toulouse, Cedex 4, France, Phone: +33.5.61336371 Abstract -- T

Effects of a loop array layer on a micro-inductor for future RF MEMS Components Charles-Marie Tassetti, Gaëlle Lissorgues, *Jean-Paul Gilles Groupe ESIEE, Cité Descartes, 93162 Noisy-le-Grand, France Tel : +33 (0) 1 45 92 66 96, Email : tassettc-esiee.fr , g.lissorgues-esiee.fr *IEF, Université Paris Sud, 91405 Orsay, France Tel : +33 (0) 1 69 15 65 85, Email : jean-paul.gilles-ief.u-psud.fr Abst

Finite Ground Coplanar Lines on CMOS Grade Silicon with a Thick Embedded Silicon Oxide Layer Using Micromachining Techniques Guoan Wang, Andrew Bacon, Reza Abdolvand, Farrokh Ayazi, John Papapolymerou, and Emmanouil M. Tentzeris School of Electrical and Computer Engineering Georgia Institute of Technology, Atlanta, GA 30332-0250, USA Abstract--Finite Ground Coplanar (FGC) waveguide transmission li

High-Performance Integrated RF-MEMS: Part 1- The Process Arthur S. Morris, III, Shawn Cunningham, Dana Dereus, Gerold Schröpfer wiSpry Inc., 4001 Weston Parkway, Suite 200, Cary, NC 27513 wiSpry Inc., 7150 Campus Drive, Suite 255, Colorado Springs, CO 80920 Coventor, Inc., 3 avenue du Quebec, ZI de Courtaboeuf, 91140 Villebon sur Yvette, France Abstract -- RF MEMS have been pursued for more tha

Ka-band Coplanar Low-Noise Amplifier Design with Power PHEMTs Sabine Long1, Laurent Escotte1, Jacques Graffeuil1, Philippe Fellon2 and Daniel Roques3 1 LAAS CNRS et Université Paul Sabatier, 7 Av. du Colonel Roche, 31077 Toulouse cedex 4, France e-mail : escotte-laas.fr, phone : 33 (0)5 61 33 64 56, fax : 33 (0) 5 61 33 69 69 2 United Monolithic Semiconductors, 91041 Orsay cedex, France 3 Alcatel

A Low-Voltage Fully-Integrated 4.5-6-GHz CMOS Variable Gain Low Noise Amplifier Ming-Da Tsai+, Ren-Chieh Liu*, Chin-Shen Lin+ and Huei Wang*+ Graduate Institute of Communication and * Dept. of Electrical Engineering, National Taiwan University, Taipei, Taiwan, R.O.C. Phone: +886-2-23635251 ext.527 Fax:+886-2-23638247 e-mail:hueiwang-ew.ee.ntu.edu.tw GaAs-based chip is difficult to integrate with C