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Variable-Load Constant-Efficiency Power Amplifier for Mobile Communications Applications Giorgio Leuzzi, Claudio Micheli University of L'Aquila, Department of Electrical Engineering, Monteluco di Roio, 67040 L'Aquila, Italy, +39.0862.434444 Abstract -- A SiGe HBT Class-B power amplifier has been developed with a voltage-controlled variable loaf, for constant efficiency also a low power levels. The

Single Supply, High Linearity, High Efficient PHEMT Power Devices and Amplifier for 2 GHz & 5 GHz WLAN Applications Min Park, Hokyun Ahn, Dong Min Kang, Honggu Ji, Jaekyoung Mun, Haecheon Kim, and Kyoung Ik Cho Microwave Device Team, Wireless Communication Devices Department, Basic Research Laboratory, Electronics and Telecommunications Research Institute, 161 Gajeong-dong, Yuseong-gu, Daejeon 305

System-on-Package (SOP) Architectures for compact and low cost RF Front-end modules S. Pinel, K. Lim, R. G. DeJean, L. Li, C-H.Lee, M. Maeng, M.F. Davis, M. Tentzeris & J. Laskar. Packaging Research center, Yamacraw Design Center, School of Electrical and Computer Engineering Georgia Institute of Technology, Atlanta GA 30332-0269 USA Fax:(404) 894-5028, Email; pinel-ece.gatech.edu Abstract - This

Characterisation, Modelling and Design of Bond-Wire Interconnects for Chip-Package Co-Design Arun Chandrasekhar1, Serguei Stoukatch1, Steven Brebels1, Jayaprakash Balachandran1, Eric Beyne1, Walter De Raedt1, Bart Nauwelaers2 and Anindya Poddar3 MCP-MaRS, IMEC vzw, Kapeldreef 75, 3001, Leuven, Belgium. Phone: +32 16 288228 E-mail: achandra-imec.be 2 Dept. ESAT, K. U. Leuven, Kasteelpark Arenberg 1

Feedback Amplifier based on an Embedded HEMT in Thin-film Multilayer MCM-D Technology Raf Vandersmissen1, Dominique Schreurs2, Geert Carchon1, and Gustaaf Borghs1 1 IMEC, MCP, Kapeldreef 75, B-3001 Leuven, BELGIUM, +32-16-288056, raf.vandersmissen-imec.be 2 K.U.Leuven, ESAT/TELEMIC, Kasteelpark Arenberg 10, B-3001 Leuven, BELGIUM Abstract -- In this paper a feedback amplifier circuit integrated

Wafer Level Integration of a 24 GHz Differential SiGe-MMIC Oscillator with a Patch Antenna using BCB as a Dielectric Layer ¨ P. Abele1 , E. Ojefors2 , K.-B. Schad1 , E. S¨ nmez1 , A. Trasser1 , J. Konle3 , and H. Schumacher1 o Dept. of Electron Devices and Circuits, University of Ulm Albert-Einstein-Allee 45, D-89081 Ulm, Germany email: pabele-ebs.e-technik.uni-ulm.de Phone: +49 731 5031593 Fax: +

A Chip-Scale Packaged Amplifier MMIC using Broadband Hot-Via Transitions A. Bessemoulin1, Member, IEEE, C. Gaessler2, P. Marschall3, P. Quentin1 1 United Monolithic Semiconductors S.A.S, Route Départementale 128 ­ BP46, F-91401 Orsay Cedex, France 2 United Monolithic Semiconductors GmbH, Wilhelm-Runge-Strasse 11, D-89081 Ulm, Germany 3 Daimler Chrysler REM/CF, Wilhelm-Runge-Strasse 11, D-89081 Ul

An 1 GHz Class E LDMOS Power Amplifier Andreas Ådahl, Herbert Zirath Microwave Electronics Laboratory, Chalmers University of Technology, Sweden Phone: +46-(0)-31-772 50 48, Fax: +46-(0)-31-16 45 13 E-mail: adahl-ep.chalmers.se Abstract--A class E power amplifier working at 1 GHz and with an LDMOS transistor as switching element has been developed. The circuit is implemented with lumped and distr

A Simple Technique for Improving the IM3/C and PAE Performance of MESFET Amplifiers J N H Wong and C S Aitchison Microwave Systems Research Group, Advanced Technology Institute, University of Surrey, Guildford, Surrey GU2 7XH, UK Abstract -- This paper shows by simulation that a shunt short -circuited /4 line placed across the drain terminals of a microwave MESFET amplifier significantly improves