Non-Linear Statistical Modelling of GaAs FET Integrated Circuits Using Principal Component Analysis Marco Balsi, Francesco Centurelli, Alessandra Forte, Giuseppe Scotti, Pasquale Tommasino, Alessandro Trifiletti Dept. of Electronic Engineering, University of Rome "La Sapienza", Via Eudossiana 18, 00184, Rome, Italy. Phone: +3944585679 Abstract -- A statistical non-linear model of GaAs FET MMIC's

X-band AlGaN/GaN HEMT MMIC Voltage-Controlled Oscillator Val Kaper1 , Richard Thompson1, Tom Prunty1 , James R. Shealy1 1 Cornell University, School of Electrical and Computer Engineering, 112 Phillips Hall, Ithaca NY 14853, USA 1-607-257-3257, kaperv-ece.cornell.edu height and reduces gate leakage. It has also been observed [7] that the GaN cap helps to minimize current collapse and increases of

A Wideband Low Voltage Low Phase Noise 10-GHz SiGe Switchable VCO Damiana Morigi1, Leonardo Masini1, Massimo Pozzoni2 1 Laboratori Fondazione Guglielmo Marconi ­ Via Porrettana 123 ­ 40044- Sasso Marconi ­ Italy, Tel +39 051 6781911 Fax +39 051 846479 2 STMicroelectronics ­ Via Tolomeo 1- 20010 - Cornaredo ­ Milano ­ Italy, Tel +39 02 93519 Fax +39 02 93519473 Therefore it becomes crucial to choo

Devices selection for S to X bands low phase noise oscillator design G. Cibiel, O. Llopis, L. Escotte, G. Haquet* * LAAS-CNRS, 7 Avenue du Colonel Roche - 31077 Toulouse - France THALES-MICROELECTRONICS, ZI de Bellevue ­ 35221 Châteaubourg Cedex ­ France Contact: gcibiel-laas.fr, llopis-laas.fr Abstract In this paper, a comparative study of various transistors dedicated to low phase noise S to X

A novel noise model extraction technique for microwave and millimeter wave HEMT M. De Dominicis, F. Giannini, E. Limiti, A. Serino Department of Electronic Engineering, University of Rome "Tor Vergata" Via del Politecnico 1 00133 Rome (Italy) tel. +390672597341 fax +390672597343 marco.de.dominicis-uniroma2.it Abstract In this paper a novel method to extract the noise parameters of active devices

Large-signal compact diode noise modelling strategies for non-autonomous RF nonlinear applications F. Bonani, S. Donati Guerrieri, G. Ghione Politecnico di Torino, Dipartimento di Elettronica, Corso Duca degli Abruzzi 24, I-10129 Torino, Italy, Phone +39 011 564 4140 Abstract-- We discuss system-oriented approaches to identify large-signal, cyclostationary compact noise models of RF pn diodes bas

He+- and Fe+- ion bombardments in the electrical isolation of InP/InGaAs HBT Structures Suba C. Subramaniam, Ali A. Rezazadeh Centre for Electromagnetics Designs and Applications, Dept. of Electrical Engineering and Electronics, UMIST, Manchester, UK. M60 1QD Tel.: +44 (0)161 200 4823 E-mail: S.Subramaniam-student.umist.ac.uk Abstract -- We have investigated He+- and Fe+- ion bombardments in the e

Influence of carbon sources on thermal stability of Cdoped base InP/InGaAs heterojunction bipolar transistors Noriyuki Watanabe, Masahiro Uchida, Hideo Yokohama, Gako Araki NTT Advanced Technology Corporation, 3-1, Morinosato Wakamiya, Atsugi, Kanagawa 243-0124, Japan, Tel:+81 46 250 3344 Abstract -- We report effects of annealing on InP/InGaAs heterojunction bipolar transistors (HBTs) having an I

AlGaN/GaN -heterojunction FET with inverted 2DEG Channel V.G.Mokerov, L.E.Velikovskii, Z.T.Kanametova, V.E.Kaminskii, P.V.Sazonov, * J.Graul, * O.Semchinova Institute of UHF Semiconductor Electronics of RAS 117105, Moscow, Russia, Nagornii proezd, d.7, korp. 8/0 * Laboratories for Informationstechnologie, University Hanover, Schneiderberg 32, 30167 Hanover, Germany Abstract. Novel heterojunction

mm-wave Performance of 50nm T-Gate AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistors with fT of 200 GHz Xin Cao, Euan Boyd, Helen Mclelland, Stephen Thoms, Martin Holland, Colin Stanley, Iain Thayne Nanoelectronics Research Centre, University of Glasgow, Glasgow G12 8LT, Scotland UK. Tel +44(0)141 330 6678 Abstract -- By combining high resolution electron beam lithography, novel T-gat