A 10 Gb/s CMU in SiGe BiCMOS commercial technology with multistandard capability Francesco Centurelli *, Alessandro Golfarelli §, Jesus Guinea, Leonardo Masini §, Damiana Morigi §, Massimo Pozzoni, Giuseppe Scotti *, Alessandro Trifiletti * STMicroelectronics, I-20010 Cornaredo (MI), ITALY * Dipartimento di Ingegneria Elettronica, Università "La Sapienza" di Roma, I-00184 Roma, ITALY § Laboratori

Cryogenic Investigation of Current Collapse in AlGaN/GaN HFETS S. Nuttinck1, S. Pinel1, E. Gebara2, J. Laskar1, and M. Harris3 1 Georgia Institute of Technology, School of Electrical Engineering, 791 Atlantic Drive Atlanta, GA, 30332 USA E-mail: sn46-prism.gatech.edu, Phone: 404 894 9924, Fax: 404 894-5028 2 Quellan Inc., 250 14th Street, Atlanta, GA 3 GeorgiaTech Research Institute, Electro-O

Large Signal Properties of AlGaN/GaN HEMTs on High Resistivity Silicon Substrates Grown by MBE William E. Sutton, 1Dimitris Pavlidis, 2 Hacène Lahrèche, 2Benjamin Damilano and 2Robert Langer Department of Electrical Engineering and Computer Science, University of Michigan Ann Arbor, Michigan 48109-2122, USA 2 PICOGIGA INC., Place Marcel Rebuffat, Parc de Villejust, 91971 Courtaboeuf 7 Cedex Villej

A Hybrid Self-Oscillating Mixer Based on InP Heterojunction Interband Tunnel HEMT for Wireless Applications Matteo Camprini1, Iacopo Magrini1, Giovanni Collodi1, Alessandro Cidronali1, Vijay Nair2, Gianfranco Manes1 1 University of Florence, Department of Electronics and Telecommunications, Via S. Marta 3, 50139 Firenze, Italy, +39.0554796369 2 PSRL Motorola Labs, 7700 S. River Parkway, M.D. ML34

Electrothermal and trapping effects characterisation of AlGaN/GaN HEMTs C. Charbonniaud, S. De Meyer, R. Quéré, JP. Teyssier IRCOM, CNRS UMR 6615, University of Limoges, 19100 Brive, France Abstract -- This paper presents a systematic analysis of the two kinds of traps encountered in AlGaN/GaN HEMTs. It is shown that passivation is very efficient to minimize the surface trap effects but has little

High Performance 50nm T-Gate In0.52A10.48As/In0.53Ga0.47As Metamorphic High Electron Mobility Transistors Xin Cao, Iain Thayne, Stephen Thoms, Martin Holland, Colin Stanley Nanoelectronics Research Centre, University of Glasgow, Glasgow G12 8LT, Scotland UK. Tel +44(0)141 330 6678 ABSTRACT -- We report the performance of 50 nm gate length metamorphic GaAs HEMTs with maximum transconductance(gm) of

A Balanced Sub-Harmonic Cold FET Mixer for 40GHz Communication Systems Peter Butterworth 1, Christophe Charbonniaud 1, Michel Campovecchio 1, Jean-Christophe Nallatamby 1, Marc Monnier 2 and Monique Lajugie 2 1 IRCOM, 123 Av. A. Thomas, 87060 Limoges Cedex, France, Phone: (33) 555 457 734 2 TMW, 29 Av. Carnot, 91349 Massy Cedex, France Abstract -- This paper reports a novel MMIC balanced sub-har

A 5GHz-Band On-Chip Matching CMOS MMIC Front-End Hiro-omi Ueda1, Shintaro Shinjo1, Yasuhiro Nabeno1, Masayoshi Ono1, Takahiro Ohnakado2, Takaaki Murakami2, Akihiko Furukawa2, Yasushi Hashizume2, Kazuyasu Nishikawa2, Takeshi Mori2, Satoshi Yamakawa2, Tatsuo Oomori2 and Noriharu Suematsu1 Information Technology R&D Center, Mitsubishi Electric Corp., Kamakura, Kanagawa, 247-8501, Japan Tel:+81-467-41

Six-Port Receiver Front-End MMIC for V-Band MBS Applications Thorsten Brabetz, Vincent F. Fusco Queen's University Belfast, Electrical & Electronic Eng., Ashby Building, Stranmillis Road, Belfast, BT9 5AH, United Kingdom, Phone: +44.2890.27-4089, Fax: +44.2890.667023, E-mail: V.Fusco-ee.qub.ac.uk Abstract-- A V-band six-port receiver front-end MMIC for 65.5 GHz has been designed, manufactured, and

E/D pHEMT Multi Frequency Generator GaAs MMIC for Aerospace Applications Marco Detratti1, Jeffrey Chuan1, Juan Pablo Pascual1, José Luis García1, Javier Cabo2 1 University of Cantabria, Dpto. Ing. De Comunicaciones, Av. De Los Castros s/n, 39005 Santander, Spain Phone: +34-942201391 Fax: +34-942201488 2 Alcatel Espacio, C/ Einstein 7, 28060 Tres Cantos, Madrid, Spain -- This paper presents the d