Proceedings of the 19th European Microwave Integrated Circuits Conference Probing Plasmon Resonances in AlGaN/GaN Heterostructures with 300 K black-body radiation Maksym Dub#$ , Pavlo Sai#$, Dmytro But$, Sergey Rumyantsev$, Wojciech Knap#$ # CENTERA, CEZAMAT, Warsaw University of Technology, Poland $ Institute of High Pressure Physics PAS, Poland mdub-unipress.waw.pl Abstract ? Our study reveal

Proceedings of the 19th European Microwave Integrated Circuits Conference Low-Power Dual-Core Inductively Coupled 40 GHz Push-Push VCO in 22nm FDSOI CMOS S. Koop-Brinkmann$ ¶ , M. Ichikawa# ¶ , V. Lasserre$ , L. Bakhchova$ , F. Padovan* , H. Ishikuro# , V. Issakov$ $ Institute for CMOS Design, Technische Universität Braunschweig, Germany # Keio University, Japan * In?neon Technologies Austria AG

Proceedings of the 19th European Microwave Integrated Circuits Conference CMOS-integrated terahertz dielectric near-field sensor 1 1 12 3 Alexander V. Chernyadiev , Dmytro B. But , Cezary Ko?aci?ski , K?stutis Ikamas , 1 3 Wojciech Knap , Alvydas Lisauskas 1 CENTERA Laboratories, Institute of High Pressure Physics, PAS, Poland Institute of Microelectronics and Photonics, ?ukasiewicz Research

Proceedings of the 19th European Microwave Integrated Circuits Conference Navigating Challenges in Doherty Power Amplifier Design for Millimeter-Wave Frequencies Anna Piacibello, Vittorio Camarchia Department of Electronics and Telecommunications (DET), Politecnico di Torino, Italy {anna.piacibello, vittorio.camarchia}-polito.it Abstract ? The paper addresses some of the challenges associated wi

Proceedings of the 19th European Microwave Integrated Circuits Conference Integrated high speed graphene photodetectors for sub-THz links in the D-Band Alberto Montanaro12 , Alex Boschi3 , Guillaume Ducournau4 , Vaidotas Mi?eikis35 , Stefano Soresi6 , Mario G.L. Frecassetti7 , Pascal Szriftgiser8 , Paola Galli9 , Henri Happy4 , Sergio Pezzini0 , Camilla Coletti35 , Marco Romagnoli1 , Vito Soriane

Proceedings of the 19th European Microwave Integrated Circuits Conference A High Integrated 13 W & 36 % PAE Ka band GaN MMIC Power Amplifier for SatCom Applications Seifeddine Fakhfakh# , Thibaut Huet# , Laurent Caille# , Veronique Serru# Mohammed Ayad# , Philippe Fellon# , Jean-Jacques Fontecave# , Jan Gruenenpuett$ # $ United Monolithic Semiconductors SAS, France United Monolithic Semiconduct

Proceedings of the 19th European Microwave Integrated Circuits Conference Optimum Biasing of SiGe-HBTs to Maximize the Gain Per Current for Power Efficient Amplification Tobias T. Braun#1 , Jan Schöpfel#2 , Klaus Aufinger$3 , Nils Pohl#*4 # Ruhr University Bochum, Germany Infineon Technologies AG, Germany * Fraunhofer Institute for High Frequency Physics and Radar Techniques (FHR), Germany {1 To

Proceedings of the 19th European Microwave Integrated Circuits Conference Wideband fully integrated GaN Doherty Power Amplifier Module for 5G massive MIMO applications Pierre. Ferris, Stephan Maroldt, Nelsy Monsauret, Kaisseh Houssein, Christophe Quindroit, Xavier Moronval Ampleon, France pierre.ferris-ampleon.com Abstract ? This paper presents the design and performances of a power amplifier mod

Proceedings of the 19th European Microwave Integrated Circuits Conference A Low-Power 42 to 67 GHz Variable-Gain LNA in 22FDX® on Standard- and High-Resistivity Substrates with 3.4 dB Noise Figure M. Rack#, L. Nyssens#, S. Wane$, D. Bajon$, J.-P. Raskin#, D. Lederer# # Université catholique de Louvain, ICTEAM, Belgium $ eV-Technologies, France martin.rack-uclouvain.be Abstract ? This paper desc

Proceedings of the 19th European Microwave Integrated Circuits Conference A High-Pass Distributed Amplifier Operating from 215 GHz ? 315 GHz in a 35 nm InGaAs mHEMT Technology # # # # # $ Lukas Gebert , Benjamin Schoch , Dominik Wrana , Thomas Ufschlag , Simon Haußmann , Axel Tessmann , $ # Sandrine Wagner , Ingmar Kallfass # Institute of Robust Power Semiconductor Systems (ILH), Universit