Proceedings of the 19th European Microwave Integrated Circuits Conference Ka-Band Cascode CMOS Power Amplifier with Improved Linearity Using Bias Optimization Technique Hyunsoo Kim1, Jaeyong Lee2, Changkun Park3 IMS Lab, Department of Intelligent Semiconductors, Soongsil University, Republic of Korea {1wewe0827, 2mirinae38}-soongsil.ac.kr, 3pck77-ssu.ac.kr Abstract ? In this study, we presented a

Proceedings of the 19th European Microwave Integrated Circuits Conference Analysis of mm-Wave Detection with AlGaN/GaN HEMTs by means of Measurements and Physical and Equivalent Circuit Models *1 *2 *3 $4 *5 *6 I. Íñiguez-de-la-Torre , G. Paz-Martínez , S. García-Sánchez , P. Artillan , T. González , J. Mateos * $ Applied Physics Department, and USAL-NANOLAB, Universidad de Salamanca, Spa

Proceedings of the 19th European Microwave Integrated Circuits Conference The Impact of Nanoscale CMOS Devices Scaling and Variations on mm-Wave CMOS Performance Jyh-Chyurn Guo, Jyun-Rong Ou Institute of Electronics Engineering, National Yang-Ming Chiao Tung University, Taiwan jcguo-nycu.edu.tw, jr_ou.ee03g -g2.nycu.edu.tw Abstract ?The impact of nanoscale CMOS devices scaling and variations as w

Proceedings of the 19th European Microwave Integrated Circuits Conference A 22-nm FDSOI 35-41 GHz Frequency Synthesizer J-B. David, A. Siligaris, J. Prouvée, B. Martineau, M. Zarudniev, J.L. González-Jiménez Université Grenoble-Alpes, CEA-Leti, France jean-baptiste.david-cea.fr Abstract ? This paper proposes a 35 to 41 GHz frequency synthesizer based on programmable integer-N frequency multiplica

Proceedings of the 19th European Microwave Integrated Circuits Conference Switch Integrated Ka-Band Low Noise Amplifier in GaN/AlN HEMT Technology 1 1 2 2 Sanaul Haque , Cristina Andrei , Mihaela Wolf , Oliver Hilt , Matthias Rudolph 1 21 Ulrich L. Rohde Chair of RF & Microwave Techniques, Brandenburg University of Technology Cottbus-Senftenberg, Germany 2 Ferdinand-Braun-Institut (FBH), Ge

Proceedings of the 19th European Microwave Integrated Circuits Conference Proposing a Subharmonic Downconverting IQ-Mixer for mm-Wave 6G and Other D-Band Applications Jan Schoepfel#1 , Tobias T. Braun#2 , Nils Pohl#&3 # & Ruhr University Bochum, Germany Fraunhofer Institute for High Frequency Physics and Radar Techniques (FHR), Germany {1 jan.schoepfel, 2 tobias.t.braun, 3 nils.pohl}-rub.de Ab

Proceedings of the 19th European Microwave Integrated Circuits Conference Free-standing Lateral AlGaN/GaN Schottky Barrier Diode Based-on GaN-on-Si Technology for High Microwave Power Applications Abdalla Eblabla, Wesley Sampson, Arthur Collier, Khaled Elgaid School of Engineering, Cardiff University, UK {Eblablaa, Sampsonw, Colliera2, Elgaidk}-cardiff.ac.uk approach enables an enhancement in bre

Proceedings of the 19th European Microwave Integrated Circuits Conference 20W and 20% PAE 2-10 GHz High-Power Amplifier for Multifunction RF Systems Manufactured in Leonardo?s GaN pHEMT 0.25um Technology Alvaro Prieto# , Alfonso Ferreras# , Jos´e Luis Jim´enez-Mart´?n* , Javier Montero-de-Paz# , Eduardo Oreja-Gigorro# , Vicente Gonz´alez-Posadas* , Juan Jos´e S´anchez-Mart´?nez# # Indra * Univers

Proceedings of the 19th European Microwave Integrated Circuits Conference 230-GHz SPDT Switch with 60-GHz Bandwidth and 20 dB Dynamic Ratio Utilizing Double-Shunt Topology in SiGe BiCMOS Xun Chen, Jonas Winkelhake, Muh-Dey Wei, Renato Negra Chair of High Frequency Electronics, RWTH Aachen University, Germany xun.chen-hfe.rwth-aachen.de Abstract ? This paper presents the analysis and design of a

Proceedings of the 19th European Microwave Integrated Circuits Conference A Wideband Millimeter-wave Vector-Sum Phase shifter in 28-nm bulk CMOS Hui-Yang Li#1, Yi-Fan Peng #, Jin-Xu Xu*2, Xiu Yin Zhang#3 School of Electronic and Information Engineering, South China University of Technology, China * School of Microelectronics, South China University of Technology, China {1lihuiyang, 2xujinxu, 3eex