Proceedings of the 21st European Microwave Integrated Circuits Conference A K-Band 4-Element Phased-Array Receiver IC for 6G LEO SATCOM with an Interstage-Matched Cascode Gm-Boosted LNA #1* #* # # $ $ $ Jungro Lee , Eunchae Jo , Taehyeon Kim , Subin Lim , Sunwoo Kong , Seunghyun Jang , Hui-Dong Lee , $ ^ #2 Bonghyuk Park , Jinseok Park , Seungchan Lee # Department of Intelligent Electroni

Proceedings of the 21st European Microwave Integrated Circuits Conference An Open-Source Design Flow for Sub-THz RFICs: 207 GHz Low Noise Amplifier and 180 GHz Power Amplifier # # # # & $ Atif Ali , Md. Shafin Hossain , Rupok Das , Sultan Mohammad Ikram , Tanjil M. Shivan , Farabi Ibne Jamal # Neural Semiconductor Limited, Bangladesh Ferdinand-Braun-Institut GmbH, Germany $ IHP - Leibniz I

Proceedings of the 21st European Microwave Integrated Circuits Conference D-Band Phase Shifter Using a Modified Translinear Loop for Linearized Gain and Phase Control Stefan Schönhärl, Albert-Marcel Schrotz, Manuel Koch, Sascha Breun, Robert Weigel, Norman Franchi Institute of Smart Electronics and Systems, Friedrich-Alexander-Universität Erlangen-Nürnberg, Germany Abstract ? This paper reports a

Proceedings of the 21st European Microwave Integrated Circuits Conference 250-nm InP/GaAsSb DHBT Technology for W- and D-Band Power Ampli?ers S. Hamzeloui, M. Ebrahimi, A. Cercaci, F. Ciabattini, A. M. Arabhavi, O. Ostinelli, C. R. Bolognesi Millimeter-Wave Electronics (MWE) Group, ETH Zurich, Switzerland hasara-ethz.ch, colombo-ieee.org Abstract ? This paper demonstrates the potential of the In

Proceedings of the 21st European Microwave Integrated Circuits Conference A 3.6?57.5-GHz Variable Gain Distributed Amplifier in 65-nm CMOS Process for High-Speed and 6G Multi-Band Receiver Applications Jun-Han Lin1, Yunshan Wang2, Huei Wang3 Dept. of Electrical Engineering and Graduate Institute of Communication Engineering, National Taiwan University, Taiwan {1r12942037, 2d01942017, 3hueiwang}-n

Proceedings of the 21st European Microwave Integrated Circuits Conference Enhanced Performance of Low-Voltage (5 V) FR3 GaN-on-Si HEMTs via In-situ SiN Epitaxy Tuning Yihao Zhuang1234, Qingyun Xie23, Siyu Liu1, Marianne Germain5, Jan Strate5, Kathia Harrouche5, Carsten Beckmann5, Xavier Seah6, Geok Ing Ng1234* 1 Energy Research Institute, Nanyang Technological University, Republic of Singapore N

Proceedings of the 21st European Microwave Integrated Circuits Conference CMOS Gate Spacer Process Optimisation to Boost SOI Device RF/mmWave Performance Y. Zhang-Fu#$ , T. Mota-Frutuoso# , L. Lucci# , B. Mohamad# , L. Nyssens# , M. Dartois# , M. Ribotta# , V. Lapras# , K. Romanjek# , J.-P. Raskin#$ , C. Fenouillet-Beranger# # Univ. Grenoble Alpes, CEA, Leti, France ? Université catholique de Lo

Proceedings of the 21st European Microwave Integrated Circuits Conference A 39 GHz Load-Insensitive Power Amplifier in 22nm CMOS-SOI with 23 dBm Output Power using a Compact Quadrature Hybrid Coupler Jonas Fritzin, Fabien Mesquita, Mustafa Özen, Magnus Nilsson, Olov Haapalahti, Hans Nyström Ericsson, Sweden {jonas.fritzin, fabien.mesquita, mustafa.ozen, magnus.b.nilsson, olov.haapalahti}-ericsson

Proceedings of the 21st European Microwave Integrated Circuits Conference High Linearity E-Band SPDT Switch with 1.6 dB Insertion Loss in 16 nm FinFET CMOS Technology Roee Ben Yishay Mobileye, Israel roee.benyishay-mobileye.com mm-Wave switches is critical to maximize system efficiency and output power. However, designing SPDT switches that simultaneously achieve low insertion loss, and high line

Proceedings of the 21st European Microwave Integrated Circuits Conference A Study of Schottky Gate Diode Noise in 10 GHz GaN HEMT Oscillators Franjo Miki´c#$ , Pratap Tumkur Renukaswamy# , Sriram Balamurali# , Giovanni Mangraviti# , Jan Craninckx# , Piet Wambacq#$ # $ imec, Belgium Department of Electronics and Informatics, Vrije Universiteit Brussel, Belgium franjo.mikic-imec.be II. D ESIGN P