Patch Antenna Adjustable in Frequency Using Liquid Crystal Noham Martin, Paul Laurent, Christian Person, Philippe Gelin and Fabrice Huret LEST ­ UBO/ENST-Br ­ UMR CNRS 6165, CS 93837, 29238 BREST Cedex 3, France Noham.Martin-univ-brest.fr Abstract : The topic considered here is the design, achievement and test of a liquid crystal­based patch antenna. This device was realised in planar technology w

Installed Performance Analysis of a Direction Finding System on Board of a Large Aircraft Platform Rainer Bunger1, Franz Demmel2, Jan Ritter1 1 EADS-Germany GmbH, Military Aircraft, Signature Technology, Hünefeldstrasse 1-5, 28199 Bremen, Germany Phone +49 (0) 421 538 -2654 , Fax: -3449 1 Rohde & Schwarz, Mühldorfstrasse 15, 81671 Munich, Germany Phone +49 (0) 89 4129 -0, Fax: -12164 created. The

Stacked Common Mode Power Combining Patch Antenna For LINC Transmitter Ser Tar Chiw1, Peter Gardner1 1 University of Birmingham, Department of Electronic, Electrical and Computer Engineering, Edgbaston, Birmingham B15 2TT, United Kingdom. Tel: +44 0121 414 4334 Email:chiwst-eee-fs7.bham.ac.uk Abstract -- A new stacked antenna that enhances the operating frequency bandwidth of an integrated power

Wide Band Slot Antenna Aleksandr V. Sulima Institute of Radio Physics and Electronics, NASU Kharkov, 61085 Ukraine alex_sulima-yahoo.com Abstract A cavity-backed slot antenna is proposed. The antenna is theoretically and experimentally studied. The antenna consists of a slot cut in a ground plane and backed by shorting strips, forming a backing cavity. Experimental studies of the antenna show a 2

0.13 µm Low Voltage Logic Based RF CMOS Technology with 115GHz fT and 80GHz fMAX J. C. Guo1, C. H. Huang1, K. T. Chan1, W. Y. Lien2, C.M. Wu2, and Y.C. Sun2 Department of Electronics Engineering, National Chiao Tung University, Hsinchu, Taiwan Phone: +886-3-5712121 ext.54158, fax: +886-3-5724361, email : jcguo-ee.nctu.edu.tw 2 Research Development Center, Taiwan Semiconductor Manufacturing Corp.,

High Q Switchable Planar Resonator Loaded with a MEMS Digital Capacitance. A Pothier1, P. Blondy1, D. Cros1, S Verdeyme1, P. Guillon1, J C. Orlianges2, C. Champeaux2, A. Catherinot2 1 IRCOM, 2 SPCTS, Faculté des sciences, 123 av. A. Thomas 87060 LIMOGES ­ FRANCE ­TEL 33 555 457 731 capacitance must be high compared to the capacitance value Ci in order to preserve the Ci influence. S1 C1 Abstract

A Micromachined Tunable Cavity Resonator D. Mercier1, M. Chatras1, J. C. Orlianges2, C. Champeaux2, A. Catherinot2, P. Blondy1, D. Cros1 and J. Papapolymerou3 1 IRCOM, 2SPCTS, Limoges cedex, 123 av. Albert Thomas 87060 , France. 3 Georgia Institute of Technology, Atlanta, Georgia, 30332-0250, USA. length of CPW line behaves like a low Q resonator that induces a perturbation in the high Q cavity a

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A Grounded Co-Planar Waveguide MEMS Switch Kenichi Miyaguchi1, Yukihisa Yoshida2, Tamotsu Nishino1, Masatake Hangai1, Yoshiyuki Suehiro2, Sang-Seok Lee2, Akio Iida1, and Osami Ishida1 Information Technology R&D Center, Mitsubishi Electric Corp. Advanced Technology R&D Center, Mitsubishi Electric Corp. 5-1-1 Ofuna, Kamakura-city, Kanagawa 247-8501, Japan Tel: +81-467-41-2685, Fax: +81-467-41-2519,

Influence of RF signal power on tunable MEMS capacitors. Aurélie Cruau1, Pierre Nicole1, Gaëlle Lissorgues2, Charles-Marie Tassetti2 Thales Airborne Systems, OHTA department, Centre Charles Nungesser, 78851, Elancourt cedex, France, +33(0)1348135 12, Email : cruaua-esiee.fr, pierre.nicole-fr.thalesgroup.com ESIEE, SIGTEL laboratory, Cité Descartes, 93162, Noisy-le-Grand, France, +33 (0) 1 45 92 66