High Performance Elevated Thin Film Microstrip on Polyimide-loaded Silicon Sang-No Lee1, Ok-Guen Lim2, Jong-Gwan Yook1 and Yong-Jun Kim2 1 Dept. of Electrical and Electronic Eng., Yonsei Univ., 134, Shinchon-dong, Seodaemoon-ku, Seoul, Korea 2 Dept. of Mechanics Eng., Yonsei Univ., Seoul, Korea are located on the polyimide layer to achieve smaller effective electrical dimensions. Even further, th

A Very Compact RF MEMS Switch For Frequencies Up To 50 GHz Bernd Schauwecker, Karl M. Strohm, Winfried Simon#, Torsten Mack, and Johann-Friedrich Luy, Fellow IEEE DaimlerChrysler AG, Research & Technology, Wilhelm-Runge-Strasse 11, 89081 Ulm, Germany # IMST GmbH, Carl-Friedrich-Gauss-Str. 2, 47475 Kamp Lintfort, Germany Abstract - A scaled, smaller version of the recently published Toggle Switch,

RF MEMS Switches Based on the Buckle-beam Thermal Actuator D. Girbau1, A. Lázaro1, L. Pradell1 1 Universitat Politècnica de Catalunya (UPC), Dept. TSC, Campus Nord UPC ­ Mòdul D3, 08034 Barcelona ­ Spain, tel: +34-93-4016834, fax: +34-93-4017232 with CMOS-compatible voltages [3] and outstanding RF performance acceptable for millimeter-wave applications [4] after a flip-chip assembly to a high-res

EM Analysis of Shielding Strategies to reduce Substrate Noise in Silicon based Technology D. Bajon1 , S. Wane2, H. Baudrand2 and P. Gamand3 1 SUPAERO 10 av. Ed. Belin, 31055 Toulouse-France, 2ENSEEIHT 2 rue Camichel 31071 Toulouse-France wane-len7.enseeiht.fr , 3 Philips Semiconductors 2 rue de la girafe - 14079 Caen - France Abstract -- EM Fullwave Analysis intend to become an alternative to th

Mode Coupling in Coplanar Waveguide Bends: A Simple Four-Port Model Rajarajan Senguttuvan1, Leonard Hayden2, Andreas Weisshaar1 1 School of Electrical Engineering and Computer Science, Oregon State University, Corvallis, OR 97331-3211, USA Tel: +541-737-3153; Fax: +541-737-1300; E-mail: andreas-ece.orst.edu 2 Cascade Microtech Inc, Beaverton, Oregon, 97006, USA Abstract -- This paper presents a

Physical and Electrical Modelling of Bonding Wires up to 110 GHz C.Descharles1, C. Algani1, B. Mercier2, G.Alquié1 1 Université Pierre et Marie Curie, Laboratoire des Instruments et Systèmes d'Ile-de-France, 4 place Jussieu, BP-252 75252 PARIS CEDEX 05 - FRANCE 2 ESIEE ­ Cité Descartes, BP 99-2, BD Blaise Pascal, 93162 Noisy le Grand CEDEX ­ FRANCE Abstract -- This paper presents an electrical m

Full-wave Characterisation of RF Ceramic Packages Patrick Schuh1 , Horst Bilzer, Wolfgang Menzel, J¨ rgen Kiwitt2 and Maximilian Pitschi2 u Microwave Techniques, University of Ulm, D-89069 Ulm, Germany, wolfgang.menzel-ieee.org 1 now with EADS MicroWave Factory, D-89077 Ulm, Germany, patrick.schuh-ieee.org 2 EPCOS AG, Munich, Germany, juergen.kiwitt-epcos.com Abstract -- The characterization of sm

LTCC-Technology for Miniaturised Ka-Band Frontends Axel Brokmeier, EADS Deutschland GmbH, 89077 Ulm , Germany Phone +497313924276 , Fax +49731392204276 , E-Mail axel.brokmeier-sysde.eads.net Abstract ­ A modern state-of-the-art radar frontend for use in Ka-band radar applications like small seekers for missiles or drones has stringenst requirements to electrical, mechanical and thermal aspects. It

An InGaP-HBT IC Chipset for 40-Gbps Opticaltransmission Systems on the Basis of a Microwavecircuit Design Scheme K. Hosoya, Y. Suzuki, Y. Amamiya, Z. Yamazaki, M. Mamada, A. Fujihara, M. Kawanaka, S. Tanaka, S. Wada, and H. Hida NEC Corporation, Photonic and Wireless Device Research Laboratories, 34 Miyukigaoka, Tsukuba, 305-8501 Ibaraki, Japan, Phone: +81-29-850-1513 Abstract -- An InGaP-HBT IC c

An Extremely Broadband Software Configurable Six-Port Receiver Platform Torsten Mack1, Alexander Honold1,2 , Johann-Friedrich Luy1 1 DaimlerChrysler AG, Research and Technology, REM/CM, Wilhelm-Runge-Str. 11, 89081 Ulm, Germany tel.: +49 731 505 2045, e-mail: torsten.mack-daimlerchrysler.com 2 Fachhochschule Ulm, Fachbereich Elektrotechnik, 89075 Ulm, Germany between a RF and LO signal is measure