Home » Knowledge Centre

Knowledge Centre

Find a document written by the best international scientists in our secure database.

24787 documents
A Novel Approach for LTCC Packaging Using a PBG Structure for Shielding and Package Mode Suppression
A. Ziroff, M. Nalezinski, W. Menzel
A Novel Approach for LTCC Packaging Using a PBG Structure for Shielding and Package Mode Suppression Andreas Ziroff1, Martin Nalezinski2, Wolfgang Menzel3 1 Siemens AG, CT PS 7, 81730 Munich, Germany, Phone +49 89 636 52191, andreas.ziroff.external-mchp.siemens.de 2 Siemens AG, CT PS 7, 81730 Munich, Germany, Phone +49 89 636 43828, martin.nalezinski-siemens.com 3 Universität Ulm, menzel-mwtc.e-t
An LTCC Design Technique Based on Accurate Component Models and EM Simulations
V. Napijalo, T. Young, J. Costello, K. Conway, D. Kerney, D. Humphrey, B. Verner
An LTCC Design Technique Based on Accurate Component Models and EM Simulations Veljko Napijalo, Thomas Young, John Costello, Kieran Conway, David Kearney, Denver Humphrey and Billy Verner TDK Electronics Ireland Ltd, 3022 Lake Drive, City West Business Park, Dublin 24, Ireland, Phone +353 1 4133 235 Abstract -- This paper describes the LTCC design methodology adopted by TDK. The main aim of the ne
Vertical Feedthroughs for Millimeter-Wave LTCC Modules
J. Heyen, A. Gordiyenko, P. Heide, A.F. Jacob
Vertical Feedthroughs for Millimeter-Wave LTCC Modules Johann Heyen, Andriy Gordiyenko *, Patric Heide *, and Arne F. Jacob Institut für Hochfrequenztechnik, Technische Universität Braunschweig, P/O 3329, 38023 Braunschweig, Germany; Email: j.heyen-tu-braunschweig.de * EPCOS AG, Product Development Modules, Anzinger Straße 13, 81617 Munich, Germany Abstract -- This paper reports on novel types of
A SiGe HEMT Mixer IC with Low Conversion Loss
I. Kallfass, F. Gruson, P. Abele, K. Michelakis, T. Hackbarth, K.-H. Hieber, J. Müller, H. Schumacher
A SiGe HEMT Mixer IC with Low Conversion Loss I. Kallfass, F. Gruson, P. Abele, K. Michelakis*, T. Hackbarth**, K.-H. Hieber**, J. Müller**, H. Schumacher Department of Electron Devices and Circuits, University of Ulm Albert-Einstein-Allee 45, 89081 Ulm, Germany ikall-ebs.e-technik.uni-ulm.de * Department of Electrical and Electronic Engineering, Imperial College London London SW7 2AZ, UK ** Daiml
A 5.8 GHz Mixer using SiGe HBT Process
S.-H. Lee, J.-Y. Lee, S.-Y. Lee, C.W.Park, S.H. Kim, H.-C. Bae, J.-Y. Kang, K.-I. Cho
A 5.8 GHz Mixer using SiGe HBT Process Sang-Heung Lee, Ja-Yol Lee, Seung-Yun Lee, Chan Woo Park, Sang Hoon Kim, Hyun-Chul Bae, Jin-Yeong Kang, and Kyoung-Ik Cho SiGe Devices Team, Electronics and Telecommunications Research Institute, Republic of Korea Abstract -- DSRC provides high speed radio link between Road Side Equipment and On-Board Equipment within the narrow communication area. In this p
Integrated receiver components for low-cost 26 GHz LMDS applications using an 0.8 m SiGe HBT technology
E. Sönmez, A. Trasser, P. Abele, K.-B. Schad, H. Schumacher
Integrated receiver components for low-cost 26 GHz LMDS applications using an 0.8 m SiGe HBT technology E. S¨ nmez, A. Trasser, P. Abele, K. -B. Schad and H. Schumacher o Dept. of Electron Devices and Circuits, University of Ulm, D-89069 Ulm, Germany Email: esoenmez-ebs.e-technik.uni-ulm.de Phone: +49 731 50-31584 I. I NTRODUCTION The emergence of Local Multipoint Distribution Services will ope
Frequency synthesis from 2 to 30 GHz using a 0.35 m BiCMOS SiGe technology
A. Coustou, M. Sie, D. Dubuc, J. Graffeuil, E. Tournier, O. Llopis, R. Plana, C. Boulanger
(TGSWGPE[U[PVJGUKUHTQOVQ)*\WUKPIC zO$K%/155K)GVGEJPQNQI[ #%QWUVQW/5KG&&WDWE,)TCHHGWKN'6QWTPKGT1.NQRKU42NCPC%$QWNCPIGT .##5 %045 #X FW %QNQPGN 4QEJG 6QWNQWUG %GFGZ (TCPEG 56/KETQGNGEVTQPKEU TWG ,GCP /QPPGV %TQNNGU %GFGZ ZZZ %0'5 #X 'FQWCTF $GNKP 6QWNQWUG %GFGZ (TCPEG 7PKXGTUKVÃ 2 5CDCVKGT 4QWVG FG 0CTDQPPG 6QWNQWUG %GFGZ (TCPEG Abstract -- +P VJKU RCRGT YG RTGUGPV C )*\ //+
A 23 GHz Active Mixer with Integrated Diode Linearizer in SiGe BiCMOS Technology
M. Bao, Y. Li, A. Cathelin
A 23 GHz Active Mixer with Integrated Diode Linearizer in SiGe BiCMOS Technology Mingquan Bao1, Yinggang Li1 and Andreia Cathelin2 1 Ericsson AB, Ericsson Research, MHSERC, Flöjelbergsgatan 2A, 43184 Mölndal, Sweden, Tel: +46 31 7472057 2 STMicroelectronics, Central R&D, 38926 Crolles, France degeneration are utilized to improve the linearity and the input impedance match. The resistors and induc
A Simplified Approach for Quasi-linear Power Amplifier Distortion Evaluation
A. Santarelli, R.P. Paganelli, A. Costantini, G. Vannini, F. Filicori
A Simplified Approach for Quasi-linear Power Amplifier Distortion Evaluation Alberto Santarelli1, Rudi Paolo Paganelli2, Alberto Costantini1, Giorgio Vannini3, Fabio Filicori1 1 University of Bologna, Department of Electronics, Viale Risorgimento 2, 40136 Bologna, Italy, +390512093039 2 IEIIT-CNR, Department of Bologna, Viale Risorgimento 2, 40136 Bologna, Italy, +390512093845 3 University of Fer
Flip-Chip Integration of Power HEMTs: A Step Towards a GaN MMIC Technology
K. Seemann, S. Ramberger, A. Tessmann, R. Quay, R. Kiefer, M. Schlechtweg
Flip-Chip Integration of Power HEMTs: A Step Towards a GaN MMIC Technology Kay Seemann , Suitbert Ramberger , Axel Tessmann , R¨ diger Quay , u Joachim Schneider , Markus Rießle , Herbert Walcher , Michael Kuri , Rudolf Kiefer , Michael Schlechtweg Kay Seemann formerly with the Fraunhofer IAF is now with the University of Erlangen, Department of Electrical Engineering, Cauerstrasse 9, 91058 Erla
0 document

ArtWhere Création de site Internet