Multiple RF-/DC-Line Crossovers in Multilayer Millimeter Wave Circuits Johann Heyen, Marc Brandes, and Arne F. Jacob Institut für Hochfrequenztechnik, Technische Universität Braunschweig, Postfach 3329, 38023 Braunschweig, Germany Phone: +49 531 391 2020, Fax: +49 531 391 2045, Email: J.Heyen-tu-bs.de, A.Jacob-tu-bs.de A recently proposed multilayer concept for low loss RF-/DC-line crossings is ex

Analysis of RF Flip-chip On-Chip Inductance Gye-An Lee*, Mohamed Megahed**, Francis M Rotella**, and Franco De Flaviis* * Department of Electrical and Computer Engineering University of California, Irvine Irvine, CA, 92697, USA E-mail: gyeanl-uci.edu ** Conexant Systems, Inc. 4311 Jamboree Road, Newport Beach, CA 92660-3007, USA Silicon based inductors in flip-chip (FC) configuration are studied

Low LO Power V-band CPW Mixer Using GaAs PHEMT Dan An, Bok Hyung Lee, Yeon Sik Chae, Hyung Moo Park, Hyun Chang Park, Jin Koo Rhee Millimeter-wave INnovation Technology research center (MINT), Dongguk University, Pil-dong, Joong- gu, Seoul, 100-715, Korea Tel : +82-2-2260-3335, Fax : +82-2-2277-4796, E-mail : jkrhee-dongguk.edu We have designed and fabricated a low LO power V-band CPW mixer using

A 76.5 GHz Transceiving Mixer Using Flip-Chip Mounted Silicon Schottky-Diodes for Automotive Radar Applications Alexander Grübl1, Arnold J. Herb1, Ralph H. Raßhofer2, Erwin M. Biebl1 1 Technische Universität München, Fachgebiet Höchstfrequenztechnik, 80290 München, Germany 2 Infineon Technologies AG, Balanstraße 73, 81541 München, Germany A novel low-cost transceiving mixer with excellent 1/f-no

77 GHz Si-Schottky Diode Harmonic Mixer Kai Schmidt von Behren, Dariusz Pienkowski and Georg Boeck Berlin University of Technology, Microwave Engineering, Sekr. HFT 5-1, Einsteinufer 25, 10587 Berlin, Germany Tel. (++49)30 314-26895, Fax (++49)30 314-26893 http://www-mwt.ee.tu-berlin.de, behren-mwt.ee.tu-berlin.de In this paper we present a 77 GHz 5th harmonic flip-chip Si-Schottky diode mixer de

High performance up-converters for millimetrewave radio systems Marco Piloni - Luigi Negri ­ Maurizio Motta Siemens Information and Communication Networks S.p.A. Strada Padana Superiore km 158 - 20060 Cassina De' Pecchi - Milano Telephone: +39 02 9526 6770 - Fax: +39 02 9526 6375 - e-mail: marco.piloni-icn.siemens.it INTRODUCTION According to the recent development of radio networks standards (ETS

A High Efficiency Power Amplifier System for CDMA Cynthia Y. Hang, Yuanxun Wang, Tatsuo Itoh University of California Los Angeles, 405 Hilgard Ave., Los Angeles, CA 90095, cynthiah-ee.ucla.edu In this paper, the study of a new power combining scheme which has either one or four amplifiers on depending upon the levels of input signal, is extended to a system with its RF carrier modulated by a IS-95

1 Power amplifier with integrated power control loop. D. Prikhodko, R. Burdenski, P. Lok, F. van Straten, U. Maurer, J. Cairo Introduction The GSM standard, as well as other digital wireless communications standards, requires accurate control of a mobile unit's transmitted power in a wide dynamic range. In such a way transmitted power from mobile station (MS) to base station (BS) has to be transm

Effect of Input Harmonic Termination on High Efficiency HBT Amplifiers for Mobile Communications Akira Ohta, Shingo Matsuda, Seiki Goto, Akira Inoue, Kenichiro Choumei, Satoshi Suzuki, Ryo Hattori, and Yoshio Matsuda High Frequency & Optical Semiconductor Division, Mitsubishi Electric Corporation 4-1 Mizuhara, Itami, Hyogo 664-8641, Japan Phone: +81-727-84-7375, Fax: +81-727-80-2694, Email: aohta-

Bandwidth and Efficiency Improvements in Cascaded Single-Stage Distributed Amplifier Bal S.Virdee, Avtar S.Virdee, Ben Banyamin* University of North London, School of Communications Technology & Mathematical Sciences, 166-220 Holloway Road, London N7 8DB, U.K., Email: b.virdee-unl.ac.uk Filtronic Components Limited, 8 Vincent Avenue, Crownhill, Milton Keynes, U.K.,Email: a.virdee-fcl.com *Now at N