A simple condition for maximum bandwidth of a chip packaged in an mm-wave waveguide Adam K. Jastrzebski Department of Electronics, University of Kent, Canterbury, Kent, CT2 7NT, UK Phone +44 1227 823704; Fax +44 1227 456084; E-mail A.K.Jastrzebski-ukc.ac.uk Abstract- Waveguides can be used as both packaging cases and interconnection media between chips. No bond wires are needed in this packaging t

A broadband microstrip to waveguide transition for FR4 multilayer PCBs up to 50 GHz. Carlo Buoli, Vito Marco Gadaleta, Tommaso Turillo, Alessandro Zingirian Siemens Information and Communication Networks S.p.A Strada Padana Superiore Km158 20060 Cassina de' Pecchi (MI) - ITALY Telephone: +390295266340 Fax: +390295266375 e-mail: Carlo.Buoli-icn.siemens.it A broadband microstrip-to-waveguide transi

Vertical Silicon K-Band CPW Through-Wafer Interconnects M. Reimann, M. Ulm, T. Buck, R. Müller-Fiedler, W. Heinrich* Robert Bosch GmbH, Corporate Research Microsystems, D-70049 Stuttgart, Germany, mathias.reimann-de.bosch.com * Ferdinand-Braun-Institut für Höchstfrequenztechnik (FBH), D-12489 Berlin, Germany With the increase in production volume of RF devices (e.g. for automotive applications), p

RF MEMS Switch with Wafer Level Package Utilizing Frit Glass Bonding M. Fujii, I. Kimura, T. Satoh and K. Imanaka Micromachining Lab., Central R&D Lab., OMRON Corporation Wadai 45, Tsukuba-city, Ibaraki, 300-4247, JAPAN Tel: +81-(0)298-64-4106, Fax: +81-(0)298-64-3380, Email: fujii-ant.trc.omron.co.jp This paper reports experimental results of RF characteristics up to 20 GHz of a RF MEMS switch ap

)XOO *+] 00,& &KLSVHW IRU 7HOHFRP $SSOLFDWLRQV LQ 60'7\SH 3DFNDJHV Klaus Beilenhoff, Pierre Quentin, Sylvie Tranchant, Olivier Vaudescal, Marc Parisot, and Heinrich Daembkes 8QLWHG 0RQROLWKLF 6HPLFRQGXFWRUV 6$6 5RXWH 'HSDUWHPHQWDOH ± %3 2UVD\ &HGH[ )UDQFH (PDLO NEHLOHQKRII#LHHHRUJ ,Q WKLV SDSHU D IXOO *+] PRQROLWKLF PLFURZDYH LQWHJUDWHG FLUFXLW 00,& FKLS VHW IRU WHOHFRP DSSOLFDWLRQ DVVHPEOHG L

2.5 GHz Wide Band Linear Amplifier with Feedforward Lineariser on a Board Hiroyuki Kayano , Satoru Iwata*, Hiroaki Sato*, and Yuji Iseki Corporate Research & Development Center, *Hino Works, Toshiba Corporation 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan kayano-csl.rdc.toshiba.co.jp A wide band feedforward lineariser amplifier we have developed is described. In particular, we repor

32nd European Microwave Conference - Milan 2002 103 104 32nd European Microwave Conference - Milan 2002 HPA & Postdistortion Linearizer vi(t) HPA v c(t) | |2 ESG3 AUX AGC & E[| |2 ] | |2 | |2 90o Hybrid e am (t) | |2 AGC & E[| |2] epm (t) | |2 Amplitude & Phase Error Estimator Figure 1: Block diagram of the proposed estimator vy(t) E[ . ] y xy w= u x u vw (t) E[{w-E[w]} 2 ]

Analysis of the Doherty technique and application to a 900MHz power amplifier Nicolas DUBUC1,2, Claude DUVANAUD2, Philippe BOUYSSE1 IRCOM, CNRS, Université de Limoges, IUT GEII, 7 rue Jules Vallès, 19100 Brive, France, dubuc-brive.unilim.fr 2 LAII-UPRES-EA 1219, Université de Poitiers, IUT, 4, Avenue de Varsovie, 16021 Angoulême, France, cduvanaud-iutang.univ-poitiers.fr In this paper, we present

Power Amplifier Linearisation Through Generation and Injection of Low-Frequency Second-Order Nonlinear Products William Jenkins and Ahmad Khanifar* Nokia Networks, Camberley, Surrey, GU15 3BW, UK, william.jenkins-nokia.com *Powerwave Technologies Inc, 1801 E. St. Andrew Place, Santa Ana, CA 92705, USA, akhanifar-pwav.com This paper reports on a novel linearisation technique that is applicable to h

Baseband Predistortion Lineariser Using Direct Spline Computation G. Acciari, F. Giannini, E. Limiti, M. Rossi Department of Electronic Engineering, University of Roma "Tor Vergata" - Roma - Italy A baseband predistorter is presented. Key features of the predistorter resides in the use of cubic splines interpolation to generate predistorted input data to the power amplifier, resulting in a reduct