32th European Microwave Conference / GAAS 2002, Session JGM2 W-Band GaAs HEMT MMIC Subharmonically Pumped Diode Mixers with 20 GHz IF Bandwidth Yuh-Jing Hwang(1)(2), Huei Wang(1), and Tah-Hsiung Chu(1)(2) (1) Department of Communication Engineering and Department of Electrical Engineering, National Taiwan University, 1 Roosevelt Rd., Sec. 4, Taipei, 106, Taiwan, R.O.C. (2) Academia Sinica Instit

A Miniaturized 0.5-Watt Q-band 0.25-µm GaAs PHEMT High Power Amplifier MMIC A. Bessemoulin, Member, IEEE, P. Quentin, H. Thomas, and D. Geiger United Monolithic Semiconductors, route départementale 128 ­ BP46, F-91401 Orsay Cedex, France Ph. (+33) 1 69 33 05 46 ­ Fax. (+33) 1 69 33 05 52 email: alexandre.bessemoulin-ums-gaas.com The performance of a very compact power amplifier MMIC for Q-band app

Influence of backside metallization on a coplanar X-band LNA R. Follmann, G. Langgartner, J. Borkes and I. Wolff IMST GmbH, D­47475 Kamp-Lintfort, Germany, e-mail follmann-imst.de H.-P. Feldle EADS Deutschland GmbH, D­89070 Ulm, Germany Abstract --In this paper the influence of the backside metallization current matrix is given by on a coplanar X-band low noise amplifier MMIC is described. First,

Broadband Active Phase Shifter GaAs MMIC Ph. Duême ­ Th. Dequen ­ R. Funck ­ B. Caillon ­ G. Guerbeur THALES AIRBORNE SYSTEMS 2, avenue Gay-Lussac 78851 Elancourt Cedex, France, philippe.dueme-fr.thalesgroup.com A broadband multifunction MMIC, achieving combined amplification and phase shift, has been developed on 2 (3.2 x 4) mm² chips using the UMS PH25 process. The frequency range is as large as

A 6-18 GHz 5-Bit Phase Shifter MMIC Using Series/Parallel LC Circuit Kenichi MIYAGUCHI, Morishige HIEDA, Yukinobu TARUI*, Mikio HATAMOTO*, Koh KANAYA**, Michiaki KASAHARA and Tadashi TAKAGI Information Technology R&D Center, Mitsubishi Electric Corp. 5-1-1 Ofuna, Kamakura-city, Kanagawa 247-8501, Japan E-mail: k-miya-isl.melco.co.jp * Kamakura Works, Mitsubishi Electric Corp. ** High Frequency & O

Evolution of LTCC technology for industrial applications Michel Massiot CMAC Microtechnology, 44 Av de la Glacière, Argenteuil, michelmassiot-cmac.com The LTCC (Low Temperature Cofired Ceramic) technology has been used for years in various applications like automotive (under the hood), data-processing, telecoms, datacoms, military and space, industrial, packaging. The evolution of the materials, p

Characteristics of GaAs HEMTs with Flip-Chip Interconnections Naoko Ono, Fumio Sasaki*, Kazuhiro Arai*, and Yuji Iseki Corporate Research & Development Center, Toshiba Corporation *Komukai Operations, Toshiba Corporation 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan E-mail: nao.ono-toshiba.co.jp A GaAs HEMT with flip-chip interconnections has been developed. There are various ground

RF System-on-Package (SOP) Development for compact low cost Wireless Front-end systems S. Pinel, K. Lim, M. Maeng, M.F. Davis, R. Li, M. Tentzeris, and J. Laskar. School of ECE, Georgia Institute of Technology, Atlanta, GA 30332, U.S.A. e-mail: pinel-ece.gatech.edu Abstract: This paper presents the development of RF System-on-Package (SOP) architectures for compact and low cost wireless radio fron

HTCC based Ku/IF/BB Down Converter for satellite on board processing applications M.C.Comparini*, C.Leone*, P.Montanucci*, M.Tursini** *Alenia Spazio S.p.A., Equipment Engineering Unit Via Saccomuro 24, 00131 Roma, Italy **Alenia Spazio S.p.A., Microelectronic Technology Unit V. Pile 60, 67100 L'Aquila, Italy Phone: +39 06 41512488 Fax: +39 06 41512507 Email: c.leone-roma.alespazio.it Abstract: T

Broadband Multi-State Electronic Impedance Tuner for On-Wafer Noise Parameter Measurement D. Pienkowski*, W. Wiatr** ´ * ** Technical University of Berlin, Einsteinufer 25, 10587 Berlin, Germany, pienkows-mwt.ee.tu-berlin.de Warsaw University of Technology, Nowowiejska 15/19, 00-665 Warszawa, Poland, wiatr-ise.pw.edu.pl Novel multi-state impedance tuner for use in on-wafer noise-parameter measur