Generation and transmission of millimeter wave signals using a modelocked microchip laser. P. R. Herczfeld, A. J. C. Vieira, A. Rosen and W. D. Jemison§ Center for Microwave-Lightwave Engineering Drexel University 32nd & Chestnut Street Philadelphia, PA 19104 USA Phone: (215) 895-2914 Fax: (215) 895-4968 e-mail: herczfeld-cbis.ece.drexel.edu § Dept. of ECE, Lafayette College, Easton, PA 18042 USA

High Performance Optical Receiver Using a PIN Photodiode and Amplifier for Operation in the Millimeter-wave Region L.Gomez-Rojas, N.J.Gomes, X.Wang, P.A.Davies and D.Wake* Photonics Group, Electronic Engineering Laboratory, University of Kent, Canterbury, CT2 7LS, UK., Tel +44 1227 827993, Fax +44 1227 456084, email: leg-ukc.ac.uk *BT Adastral Park-Martlesham Heath, Ipswich, UK, IP5 3RE Abstract

A 82-GHz-Optical-Gain-Cutoff-Frequency InP/InGaAs Double-Heterostructure Phototransistor (DHPT) and Its Application to a 40-GHz-Band OEMMIC Photoreceiver * ** Hideki Kamitsuna, Yutaka Matsuoka, Shoji Yamahata, and Naoteru Shigekawa NTT Photonics Laboratories 3-1 Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-0198 JAPAN kamituna-aecl.ntt.co.jp Abstract - This paper presents an ultra-high-speed InP/

Microwave Optical Interaction Devices: From Concept to Applications D. Jäger, R. Heinzelmann, and A. Stöhr Gerhard-Mercator-Universität Duisburg, ZHO - Optoelektronik, Lotharstrasse 55, 47057 Duisburg, Germany Phone: +49 203 379 - 2340, Fax: +49 203 379 - 2409, E.mail: D.Jaeger-uni-duisburg.de Abstract - In this paper, we review our recent work on novel high-speed photonic InP components and their

An Effective Approach to Estimate Noise Parameters Sensitivities of Microwave Amplifiers with respect to Transistor Bias A. El-Mehdi, G. Vasilescu, IEEE Member, G. Alquié, V. Fouad-Hanna, Fellow IEEE Université P. & M. Curie, LIS., BC 252, 4 place Jussieu, 75252 Paris, France E-mail: abdelmalek.Elmehdi-lis.jussieu.fr Abstract- In this contribution the noise performance sensitivities of microwaves

Combination of Circuit and Full Wave Analysis for Pre-Matched Multifinger FET B. Cetiner*, R. Coccioli**, B. Housmand*, T. Itoh* * University of California, Los Angeles, USA, **Conexant System Inc., Irvine, USA bedri-uci.edu, roberto.coccioli-conexant.com, titoh-ucla.edu Abstract-- A scalable, lumped element equivalent circuit, of a pre-matched multifinger FET cell is proposed. The model is der

Small Signal Parameters Extraction for Silicon MOS Transistors A.Bracale #*, D.Pasquet #, J.L.Gautier #, V.Ferlet *, N.Fel *, J.L. Pelloie **. # ENSEA, équipe microonde, 6 avenue du Ponceau, 95014 Cergy-Pontoise, France. * CEA, Centre de Bruyères-Le-Châtel, BP 12, 91680 Bruyères-Le-Châtel, France. Tel : 33 1 69 26 50 88. Fax : 33 1 69 26 70 53. E-mail server address: http:\ bruyères.cea.fr. ** C

A Wavelet Based Self-Adaptive Mesh for Semiconductor Devices Simulation. S. Goasguen and S. M. El-Ghazaly Telecommunications Research Center Department of Electrical Engineering, Arizona State University Tempe, Arizona 85287-5706 USA Abstract-A MESFET is simulated using a nonuniform mesh generated by an interpolating wavelet scheme. The wavelet coefficient threshold controls the compression rati

APPLICATION OF A HYBRID METHOD TO MODEL ACTIVE MICROWAVE COMPONENTS AND CIRCUITS E.Larique, A.Laloue, D.Baillargeat, S.Verdeyme, M.Aubourg, R.Quere, P.Guillon* C.Zanchi, J.Sombrin** *IRCOM Faculté des Sciences de Limoges 87060 Limoges Cedex FRANCE **CNES 18 Avenue Edouard Belin 31055 Toulouse Cedex France larique-asu.edu ­ babs-ircom.unilim.fr Abstract: This paper presents an application of a gl

Low Cost Planar Filter for 60GHz Applications Yoshihisa AMANO, Atsushi YAMADA, Eiji SUEMATSU, Hiroya SAT0 Advanced Technology Research Laboratories, SHARP Corporation 2613-1, Ichinomoto-cho, Tenri, Nara, 632-8567 Japan Te1: 81-7436-5-2485, Fax: 81-7436-5-2487, E-mail: amano-mic.tnr.sharp.co.jp Abstract - A low-cost printed planar filter circuit on alumina ceramic substrates was developed at 60GHz