0 Port1 Port2 -10 35.4 S11/S21[dB] -20 -30 46.8 Figure 1(a) -40 Spec S11[dB] S21[dB] -50 1 2 3 4 5 6 7 Freq[GHz] Figure1(b) 0 Port1 Port2 -10 49.2 -20 S11/S21[dB] -30 -40 Spec S11[dB] S21[dB] -50 1 2 3 4 5 6 7 40.5 Figure 2(a) Freq[GHz] Figure2(b) 0 S12 S32 S31 -5 -2 0 Port1 14 Port2 S12,S32,S31[dB] -10 S22[dB] -4 Port3 -15 -6 24.3 -20 S22 -25 2.5 2.7 2.9 3.1 3.3

A Novel 3D BEM Approach for Efficient Analysis of Microwave Passive Components Paolo Burghignoli, Carlo Di Nallo, Fabrizio Frezza, and Alessandro Galli "La Sapienza" University of Rome, Electronic Engineering Dept. - Via Eudossiana 18, 00184 Roma, Italy Phone: +39 06 44585840; Fax: +39 06 4742647; E-mail: burghignoli-die.ing.uniroma1.it Abstract - This work proposes a novel numerical approach base

Advanced Subgrid FD Technique for Modeling Waveguide Structures with Curved Conducting and Dielectric Boundaries Ralf Lotz, and Fritz Arndt Microwave Department, University of Bremen, P.O. Box 330 440, Kufsteiner Str. NW1, D-28359, Bremen, Germany, Fax +49 (421) 218-7330, fritz.arndt-physik.uni-bremen.de A b s t r a c t - An efficient generalized finite difference (FD) algorithm is presented whic

On the Use of Wavelets for the Implementation of High Order Mesh Refinement in Time Domain Simulations Costas D. Sarris and Linda P. B. Katehi Radiation Laboratory, Department of Electrical Engineering and Computer Science University of Michigan, Ann Arbor, MI 48109-2122, U.S.A. E-mail : f ksarris, katehi g-umich.edu Abstract - Employing high order wavelets for the formulation of time domain schem

Temperature Noise Model for MOSFET Noise Characterization A. Pascht, D. Wiegner and M. Berroth Institute for Electrical and Optical Communication Engineering, University of Stuttgart Pfaffenwaldring 47, D-70550 Stuttgart a.pascht-int.uni-stuttgart.de berroth-int.uni-stuttgart.de Abstract ­ The present CMOS technology produces n-channel MOSFET's with a transit frequency beyond 30 GHz which are at

SMALL-SIGNAL MODEL AND MICROWAVE NOISE PERFORMANCE OF THE 0.35 µm n AND p TYPE MOSFETs, SCALING DOWN Paulius Sakalaso*, Herbert Zirath*-, Andrej Litwin+ Semiconductor Physics Institute, 2600 Vilnius, Lithuania, sakalas-uj.pfi.lt, sakalas-ep.chalmers.se *Chalmers University of Technology, Department of Microelectronics, Sweden, zirath-ep.chalmers.se - Ericsson Microwave System, Mölndal, Sweden + Er

An Accurate Determination of Thermal Resistance of HBT Based on Pulsed Current I-V Measurement Hyun-Min Park, Sang-Woong Yoon, Sang-Hoon Cheon and Songcheol Hong Dept. EECS, Korea Advanced Institute of Science and Technology (KAIST) 373-1, Kusong-dong, Yusong-gu, Taejon, 305-701, Korea hmpark-eeinfo.kaist.ac.kr Abstract - A method to determine the thermal resistance (Rth) of HBT's is proposed and

Influence of Advanced GaAs MMICs on Structure and Cost of High Frequency TR-Modules for Communication and Radar Systems for Volume Markets H. Daembkes, P. Quentin, M. Camiade, K. Beilenhoff, B. Adelseck*, O. Schickl*, J. Schroth*, J.P. Viaud**, M. Lajugie**, P. Chapelle**, M. Turin** United Monolithic Semiconductors, Orsay, France and Ulm, Germany * DaimlerChrysler Aerospace, Ulm, Germany ** Thoms

Application of the Photoelectronic Mixing Device to Optical Measurement of Presence, Distance and Velocity Peter Gulden1,2, Martin Vossiek1, Patric Heide1, Rudolf Schwarte2 2 Siemens AG Corporate Technology Dep. ZT MS 1, Munich, Germany University of Siegen, Institut für Nachrichtenverarbeitung (INV), Siegen, Germany e-mail: peter.gulden-mchp.siemens.de II. PRINCIPLE OF OPERATION The PMD combines

Microwave Breast Imaging with a Non-Contacting, Monopole Antenna Array Paul M. Meaney+, Keith D. Paulsen+o, Margaret W. Fanning+, Steven P. Poplack*, Tor D. Tostesono, Dun Li+, Navin K. V. Yagnamurthy+ * Thayer School of Engineering, Dartmouth College, Hanover, NH USA Department of Diagnostic Radiology, Dartmouth-Hitchcock Medical Center, Lebanon, NH 03756 USA o Norris Cotton Cancer Center, Leban