From. the Diplom-Ingenieur to the Bachelor and Master Degrees -A German ProspectWerner Wiesbeck Institut fUr Hochstfrequenztechnik und Elektronik, University of Karlsruhe, KaiserstraBe 12, 76128 Karlsruhe, Germany e-mail: werner.wiesbeck-etec.uni-karlsruhe.de - Abstract - The Diplom-Ingenieur, the German degree for higher engineering education has served now for nearly 100 years with an excell

Power Amplifier Linearisation Using a Straightforward Technology Independent Method Based on Vectorial Large-Signal Measurements D. Schreurs, T. Visan*, S. Vandenberghe, H. van Meer**, K. van der Zanden***,B. Nauwelaers, and R. Bosisio* K.U.Leuven, div. ESAT-TELEMIC, Kard. Mercierlaan 94, B-3001 Heverlee, Belgium eMail: Dominique.Schreurs-esat.kuleuven.ac.be WWW: http://www.esat.kuleuven.ac.be/tel

Advanced Filter 'lUning using Time Domain Transforms Joel Dunsmore Hewlett-Packard Company, Santa Rosa, California, U.S.A. Abstract - The author has continued development on advanced techniques in tuning coupled-resonator fIlters based on the time domain response of a fIlter. This paper presents techniques to precisely tune fIlter coupling and resonators accounting for coupling masking, and effec

Electrooptic mapping of a MESFET interdigitated F. Rodriguez-Llorente, R. A. Dudley, A. G. Roddie structure Centre for Electromagnetic and Time Metrology. National Physical Laboratory. Teddington, Middlesex, TWII OLW, United Kingdom. Telph: +44 (0)20 8943 6672, Fax: +44 (0)20 8943 6890, email: fr-npl.co.uk. Abstract - The electric field above a MESFET has been measured using electrooptic sampli

X-BAND RESISTIVE SENSORS FOR SHORT HIGH-POWER MICROWAVE PULSE MONITORING M. Dagysl, Z. Kancleris1, R. Simniskis1, E. Schamiloglu2, FJ. Agee3 1 2 University of New Mexico, EECE Department, Albuquerque, NM 87131, USA e-mail: edl-eece.unm.edu 3 Air Force Office of Scientific Research, AFOSR/NE, 801 N. Randolph St., Arlington, VA 22203, USA e-maii: jack.agee-afosr.af.mil SemiconductorPhysicsInstitut

An Improved Method for Simultaneous Small-Signal and Noise Characterization of Two-Ports Using Multi-State Radiometer Marek Schmidt-Szalowski, Wojciech Wiatr Institute of Electronic Systems, Warsaw University of Technology Nowowiejska 15/19,00-665 Warsaw, Poland Phone: (48 22) 6607877, Fax: (4822) 8252300, eMail: mschmidt-elka.pw.edu.pl Abstract - A new noise method for accurate smallsignal and no

A SMART K-BAND 4-PORT RESONANT SWITCH BASED ON PHOTONIC BAND GAP ENGINEERING o. Vanbesien, J. Danglot and D. Lippens Institut d'Electronique et de Microelectronique du Nord, U.M.R C.N.R.S 8520 Departement Hyperfrequences et Serniconducteurs Universite des Sciences et Technologies de Lille Avenue Poincare - BP 69 F-59652 VILLENEUVE D' ASCQ Cedex, France Tel :(33) 3 20 197876 Fax: (33) 3 20 1978 92

Coplanar W -Band SPDT and SPTT Resonated PIN Diode Switches F. Steinhagen, H. MassIer,W. H. HaydI,A. Hiilsmann,K. Kohler Fraunhofer Institute for Applied Solid State Physics (lAF) Tullastr. 72, D-79108 Freiburg, Germany Tel: +49-761-5159-539, Fax: +49-761-5159-565, e-mail: stein-iaf.thg.de Abstract - High performance single pole double throw (SPDT) and single pole triple throw (SPT'T) switches op

Design of Micromachined RF Switch Shuguang Chen*, Kenichiro Suzuki**, TsunehisaMarumoto*, Youichi Ara* and Ryuichi Iwata* *Microwave and Satellite Communications Division, NEC Corporation 4035, Ikebe-Cho, Tsuzuki-ku, Yokohama 224-8555, Japan **LSI Basic Research Lab., Silicon Systems Research Labs., NEC Corporation 34 Miyukigaoka, Tsukuba, Ibaraki 305-8501, Japan Abstract: The switch contact desi

MICROELECTROMECHANICAL K-BAND SWITCHING CIRCUITS Sergio P. Pacheco, and Linda P. B. Katehi Radiation Laboratory Department of Electrical Engineering and Computer Science University of Michigan Ann Arbor, Michigan 48109-2122 USA Abstract Two single-pole single-throw (SPST) K-band circuit designs incorporating low-loss microelectromechanical systems (MEMS) microwave shunt switches are reported. DC