A NEW DOUBLE MATCHING REAL FREQUENCY TECHNIQUE APPLIED TO MULTISTAGE AMPLIFIER DESIGN tAlan C. Bannon, *Thomas J. Brazil tMotorola SPS, Mahon Industrial Estate, Blackrock, Cork, Ireland. Ph: +353 21 511589, Fax: +353 21 358991 alan bannon-email.mot.com *Department of Electronic and Electrical Engineering, University College Dublin, Belfield, Dublin 4, Ireland. Ph: +353 1 7061929, Fax: +353 1 23809

Simulation, Measurement and Structure Improvement of Quasi-Optical Multipliers M. Cryan, S. Helbing, F. Alimenti, P. Mezzanotte, L. Roselli and R. Sorrentino Department of Electronic and Information Engineering University of Perugia, Via G. Duranti 93, 1-06131 Perugia, Italy. e-mail: cryan-diei.unipg.it Abstract - The LE-FDTD method is used to investigate optimisation of slot antenna based quasi-o

SIMULATION . OF AUTONOMOUS NONLINEAR MICROWAVE CIRCUITS BY KRYLOV-SUBSPACE METHODS Vittorio RIZZOLI ( I), Franco MASTRI (2), and Alessandra COSTANZO (I) (I) DEIS, University of Bologna, Villa Griffone, 40044 Pontecchio Marconi, Bologna, Italy email: vrizzoli-deis.unibo.it (2) DIE, University of Bologna, Viale Risorgimento 2, 40136 Bologna, Italy The paper discusses a novel approach to autono

System Level Simulation Benefits from Frequency Domain Behavioral Models of Mixers and Amplifiers Jan Verspecht, Frans Verbeyst, Marc Vanden Bossche and Patrick Van Esch Hewlett-Packard EEsof. VUB-ELEC. Pleinlaan 2. 1050 Brussels. Belgium. tel. 32-2-629.2886. fax 32-2-629.2850. emailjan.verspecht-belgium.hp.com Abstract - Novel generic frequency domain behavioural models are constructed for

A High Power and Low Distortion AJGaAs Hetero MESFET with a Graded Pulsedoped Channel for Base Station Applications K. Nakata, R. Sakamoto, T. Hashinaga, N. Kuwata, and S. Nakajima Optoelectronics R&D Lahoratories, Sumitomo ElectJic IndustJ"ies,LID E-mail:knakala(iVopde.seicnjp Ab.ftract This paper reports on high power GaAs MESFET for base station applications, which has been improved over conv

A CMOS Compatible Power MOSFET for Low Voltage GHz Operation Lars Vestling, Lars Bengtsson* and Jorgen Olsson. Uppsala University, The Angstrom Laboratory, Solid State Electronics, P.O. Box 534, SE-751 21 Uppsala, Sweden e-mail: Lars.Vestling-angstrom.uu.se *Chalmers University of Technology, The Microwave Electronics Laboratory, Goteborg, Sweden Abstract This paper presents a high performance mi

FULLY-DEPLETED 0.25 MICRON SILICON-ON-INSULA TOR MOSFET TRANSISTORS FOR MICROWAVE APPLICATIONS D. Vanhoenacker-Janvier*, R. Oillono, C. Raynaud+, F. Martin+ * Microwave Laboratory, Universite catholique de Louvain Batiment Maxwell, place du Levant, 3 B-1348 Louvain-Ia-Neuve, Belgium vanhoenacker-emic.ucl.ac.be 0 Formerly at MicrowaveLaboratory,UCL, presently at A1catelMicroelectronics,Oudenaarde,

Multistatic FMCW radar for collision avoidance applications, optimization of the antenna configuration and improvement of the data processing H.T. Steenstra, F.L. Muller, P.J.F. Swart Delft University of Technology, department of Information Technology and Systems International Research Centre for Telecommunications-transmission and Radar (IRCTR) Mekelweg 4, 2628 CD, Delft, The Netherlands Tel:3

MINIATURE FRONT-END MMIC'S FOR 76-GHz-BAND AUTOMOTIVE RADAR APPLICATIONS K. Maruhashi, N. Shida*, H. Mizutani**, T. Eda**, K. Nagai**, T. Saryo***, K. Ohata and T. Matsumura* Kansai Electronics Research Laboratories, NEC Corporation *Automotive Electronics Division, NEC Corporation **C&C LSI Development Division, NEC Corporation ***Microwave and Satellite Communications Division, NEC Corporation e

Novel 77 GHz Low-Cost Automotive Radar Module with Fractional-PLL Frequency Linearizer T. v. Kerssenbrock1, T. Musch2, B. Schiek2, P. Heide1 1SIEMENSAG, CorporateTechnology,D-81730Munich, Gennany, email:kerss-ieee.org 2Ruhr-Universitlit Bochum, Institut fUr Hochftequenztechnik, D-44780 Bochum, Gennany ABSTRACT Radar is the key technology for future automotive distance warning systems. This paper