Application of MMIC and ASIC technology to a new generation satellite repeater equipment A. Surlanl, II.C. COlllperlnl, II. Feudale Alenia Spazio S.p.A., Equipment and Technologies Directorate, via liburtina 1210,00131 Rome, Italy, phone 39-64151.3615 - fax 39-6-4151.3677 of Abstract This paper focuse on the application of state-of-theart technologies such as GaAs MMICand ASIC in the development

Multi-level digital modulation performed directly at carrier frequency S Lucyszyn*, . D Robertson** *Department of Electronic and Electrical Engineering University of Surrey Guildford, Surrey, GU2 SXH United Kingdom Tel: + 44 1483 300800 Fax: + 441483 34139 **Department of Electronic and Electrical Engineering King's College, University of London Strand, London, WC2R 2LS United Kingdom Abstract Di

A high linearity and wide band feedforward amplifier design Hal.Shueh Lee, Roger D Pollard and Christopher" Snowden Microwave and Terahertz Technology Group, Department of Electronic and Electrical Engineering, The University of Leeds, Leeds, LS2 9JT UK Abstract The design of high linearity,wide-bandfeedforward amplifiers isaddressed with particular emphasis on high quality linear-phase components

A 2GHZ PLL with injection VCO "Mato., A Gamelro*, "Perez** *Dep. Electronica e Telecomunicac;tOes I Universidade de Aveiro **ETSIde Telecomunicacion de Madrid! Universidad Politecnica de Madrid Abstract Conventional phase lock loops have typically poor acquisition properties. In this communication we consider the use of signal injection in the VCO to improve the acquisition and tracking performanc

First pass success Band glass modulation, consumption PHEMT and Christer Vaktna of a complex xreceiver optimising internoise and power by a combination of HBT technology Airborne Electronics, Ericsson Microwave Systems AS, 5-431 84 Molndal, Sweden Abstract A glass circuit receiver including a balanced limiter, a low noise PHEMTamplifier stage, two HBT amplifier stages, phase shifter and a step a

Characterization of a microwave siliconsingle-chip direct conversion RF transceiver Werner Simburger * **, Herbert Knapp * **, Peter Weger ** Abstract This paper presents the detailed microwave characterization of a highly-integratedsiliconbipolar single-chip RF transceiver. The chip offers a direct conversion architecturewitha standard I/Q baseband interfaceforboth receive and transmit paths. Al

Time domain identification measurement of microwave and systems M.I. SObhy, E..A.Hosny, II.W.R. N. and EI-Sayed A. Bakkar The Electronic Engineering Laboratories, The University of Kent at Canterbury Canterbury, Kent, CT2 7NT, U.K. Abstract Models of non-linear subsystems are identified from time domain measurements. Each subsystem is identified separately and then the overall system is analyse

Efficient simulation of high-speed digital circuits using time' adaptive FD- TD technique P Ciampolini, P Mezzanotte, L Roselli and R Sorrentino Istituto di Elettronica, Universita di Perugia, Perugia, Italy Ph. +39-75-5852658 Fax +39-75-5852654 e-mail: urlo-ing.unipg.it Abstract A technique is proposed for increasing the computational efficiency of a mixed-mode FOTOcircuit simulator. The FOTO al

High power microwave nonlinear performance of high. temperature superconductor filters Mohamed A Megahed and Samir M EI-Ghazaly Department of Electrical Engineering Telecommunications Research Center Arizona State University, Tempe, AZ 85287-5706 Abstract In this paper, full-wave three-dimensional nonlinear High Temperature Superconductor (HTS) FiniteDifference Time-Domain (FDTD) electromagnetic

Accurate prediction of intermodulation distortion MESFETs F.Flllcorl, G.VannlnlO A.Santarelll, D. Torcolaccl, V.A.llonaco Dipartimento di Elettronica, Informatica e Sistemistica, Universita di Bologna, Viale Risorgimento 2 40136 Bologna, Italy. in GaAs - Abstract A previously proposed look-up-table based mathematical approach for the modelling of microwave active devices, the Nonlinear Integral