of the transmit I receive module of advanced synthetic aperture radar (ASAR) for ENVISAT satellite A Cazal, A .Jude, .JL Cazaux, M Clement ALCATELESPACE, 26 Av J F Champollion 31037 Toulouse, France Tel (+) 3361 196229 Fax (+) 3361 195274 Abstract A major space-borne radar program is on-going in Europe: the Advanced Synthetic Aperture Radar supported by the European Space Agency. ASAR makes use of

Remote sensing of land and water with an airborne 94.GHZ synthetic aperture radar H. Essen, R. Makaruschka FGAN-Forschungsinstitut fOr Hochfrequenzphysik, Neuenahrer Str. 20 D53343 Wachtberg-Werthhoven, Germany Phone: 49 228 8521, Fax: 49 228 340951 Abstract For certain remote sensing applications millimetrewaves offer advantages over lower frequency radar bands and infrared systems. In comparison

High ESD burnout surface mount GaAs zero bias detector diodes for wireless RF tag applications Yoginder Anand* Roger J Malik** M/A-Com,lnc, 43 South Avenue, Burlington, MA 01803 AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974 Abstract This paper describes "High ESD (Electro-Static Discharge) Burnout Surface Mount GaAs Zero Bias Detector Diodes for Wireless RF TagApplications",

An iterative parasitic method for HEMT Byung-Sung Kim, Sangwook Nam extraction Dept. of Electronics Eng., Seoul National University San 56-1, Shinlim-dong, Kwanak-gu, Seoul, 151-742, Korea Abstract The parasitic elements for HEMTs are extracted using an iterative technique based on the exact solution of the channel transmission equation. The proposed method uses two-point S-parameter measurement

The determination of the transistor dynamic 1- V characteristic from large signal RF measurements M Demmle.,*, P .I Taske,*, Leckey**, M Schlechtw_g* .lG *Fraunhofer-Institut fOrAngewandte Festkorperphysik, TuliastraBe, 72,D-791 08 Freiburg, Germany Phone: +49-761-5159-576, Fax: +49-7615159-565 E-mail: md-iaf.fhg.de **High Frequency Electronics Laboratory, The Queen's University of Belfast, Asby

Novel non-linear equivalent circuit extraction scheme for microwave field-effect transistors G.Leuzzl, A.Serlno, F.Gianninl, S.Ciorciolinl Dept. Electronic Engineering, University of Roma 'Tor Vergata', Roma, Italy Abstract Non-linear equivalent circuits of microwave fieldeffect transistors (MESFET's, HEMT's) are now recognised to be of prime importanceforthe accurate design of microwavecircuits,

MOdelling and optimising the SOl MOSFET in view of MMIC applications R. Gillon., -I..P. Raskin., D. Vanhoenacker.'-I.-P. COlingeUniversite catholique de Louvain * Laboratoire d'Hyperfrequences, ** Laboratoire de Microelectronique, bAtiment Maxwell, place du Levant, 3 8-1348 Louvain-Ia-Neuve, Belgium Fax: +32-10-47.87.05 A smail-signal model based on technological parameters is validated by measur

A new configuration of dual-mode rect'angular waveguide filters R.Orta, P.Savl, R.Tascone, D.Trlnchero Dipartimento di Elettronica and CESPA (C,N.R.), Politecnico di Torino, Corso Duca degli Abruzzi 24, 10129 Torino (Italy) Fax: 39-11-5464089, e-mail: orta-polito.it Abstract A design technique for a new configuration of dualmode waveguide filters based on a distributed parameter model is presente

Coupling of dual modes in a dielectric waveguide resonator and its application to bandpass filters IkUG Awai and Takeharu Yamashita Yamaguchi University, Japan Abstract A high-permittivity ceramics ( r=93)is used to fabricate a rectangular waveguide resonator of square cross section. Two degenerate TE101 and TE011 like mode of the /4 resonator is coupled each other through various perturbations su

Low profile filter using open disk dual mode dielectric resonators for microcellular base station Youhel Ishikawa, dun Hattori SelJi Hidaka, Murata Manufacturing Company, Ltd., Kyoto, Japan Abstract This paper present a low profile bandpass filter using open disk dual mode dielectric resonators for microcellular base stations. The resonator consists of two dielectric disks in a cylindrical cavity