Proceedings of the 16th European Microwave Integrated Circuits Conference A highly rugged 39 GHz 19.3 dBm Power Amplifier for 5G Applications in 45nm SOI Technology Alice Bossuet#, Baudouin Martineau#, Cédric Dehos#, Benjamin Blampey#, Alexis Divay#, Yvan Morandini* # CEA-Leti, France * Soitec, France {alice.bossuet, baudouin.martineau}-cea.fr breakdown voltage of these technologies 0,9 ? 1 V. O

Proceedings of the 16th European Microwave Integrated Circuits Conference A 4 GBaud 5 Vpp Pre-Driver for GaN based Digital PAs in 22 nm FDSOI using LDMOS Frowin Buballa#, Sebastian Linnhoff#, Thomas Hoffmann*, Andreas Wentzel*, Wolfgang Heinrich*, Friedel Gerfers# # Mixed Signal Circuit Design, Technische Universität Berlin, Germany Ferdinand-Braun-Institut gGmbH (FBH), Leibniz-Institut für Höch

Proceedings of the 16th European Microwave Integrated Circuits Conference Probabilistic Poly Harmonic Distortion Model Anna Davis Manjaly, Justin King Department of Electronic and Electrical Engineering, Trinity College Dublin, Ireland {manjalya, justin.king}-tcd.ie The X-parameter approach generally assumes a single dominant tone behaves non-linearly and the remaining harmonics behave linearly

Proceedings of the 16th European Microwave Integrated Circuits Conference Compact GaN RF-Switches for Power Applications Samira Driad#, Charles Teyssandier#, Laurent Caille#, Christophe Chang#, Laurent Brunel#, Benoit Lambert#, Hermann Stieglauer*,Valeria Brunel# # UMS SAS, France UMS GmbH, Germany {samira.driad, charles.teyssandier, laurent.caille, christophe.chang, laurent.brunel, benoit.lambe

Proceedings of the 16th European Microwave Integrated Circuits Conference A 60 GHz Frequency Doubler with 3.4-dBm Output Power and 4.4% DC-to-RF-Efficiency in 130-nm SiGe BiCMOS Yu Zhu, Hatem Ghaleb, Vincent Rieß, Niko Joram, Frank Ellinger Chair of Circuit Design and Network Theory, Technische Universit¨at Dresden, Germany yu.zhu2-tu-dresden.de topology is more compact and consumes low power, b

Proceedings of the 16th European Microwave Integrated Circuits Conference A Ka-Band MMIC Single-Chip Frequency Converter for Telecom Satellite Applications Francesco Scappaviva#, Davide Resca#, Luca Cariani#, Andrea Biondi#, Francesco Vitulli*, François Deborgies° # MEC ? Microwave Electronics for Communications, Bologna, Italy * Thales Alenia Space, Roma, Italy ° ESA ESTEC, The Netherlands {fra

Proceedings of the 16th European Microwave Integrated Circuits Conference Compact Design of a L-Band 40W 40MHz Envelope Tracking GaN Power Amplifier for Small Cells Olivier Nonet#*, Wilfried Demenitroux#, Frederic Ploneis#, Denis Barataud*, Michel Campovecchio* # Thales SIX GTS, France XLIM, UMR CNRS-7252, Université de Limoges, France {olivier.nonet, denis.barataud, michel.campovecchio}-xlim.fr

Proceedings of the 16th European Microwave Integrated Circuits Conference A Millimeter-Wave Substrate Integrated Waveguide Filter in Si-BCB Technology Jordan Corsi1, Giuseppe Acri1, Maxime Moulin1, Nicolas Zerounian2, Anne-Sophie Grimault-Jacquin2, Loïc Vincent3, Guillaume Ducournau4, Frédéric Aniel2, Florence Podevin1, Philippe Ferrari1, Emmanuel Pistono1 1 2 Univ. Grenoble Alpes, Grenoble INP

Proceedings of the 16th European Microwave Integrated Circuits Conference A 270 ? 330 GHz Vector Modulator Phase Shifter in 130nm SiGe BiCMOS Mohammad Hassan Montaseri1, Sumit Pratap Singh1, Markku Jokinen1, Timo Rahkonen2, Marko E. Leinonen1, Aarno Pärssinen1 1 Center for Wireless Communications, University of Oulu, Finland 2 Circuits and Systems Lab, University of Oulu, Finland {firstname.last

Proceedings of the 16th European Microwave Integrated Circuits Conference The Effect of Surface Passivation for Sub-THz Silicon Gradient Refractive Index Lens Antti Lamminen1, Aleksi Tamminen2, Jaakko Saarilahti1, Vladimir Ermolov1, Pekka Pursula1 1 2 VTT Technical Research Centre of Finland, Espoo, Finland Department of Electronics and Nanoengineering, Aalto University, Espoo, Finland antti.la