Proceedings of the 16th European Microwave Integrated Circuits Conference A Ka-Band 40 W Output Power and 30 % PAE GaN MMIC Power Amplifier for Satellite Communication Keigo Nakatani, Yutaro Yamaguchi, Masaomi Tsuru Information Technology R&D Center, Mitsubishi Electric Corporation Ofuna 5-1-1, 247-8501 Kamakura, Japan Nakatani.Keigo-cj.MitsubishiElectric.co.jp Abstract ? This paper presents a K

Proceedings of the 16th European Microwave Integrated Circuits Conference Mechanisms of Buffer and Surface Traps in GaN HEMTs for Low Frequency Y21 and Y22 parameters Tomohiro Otsuka#, Yutaro Yamaguchi #, Masaomi Tsuru #, Toshiyuki Oishi* # Mitsubishi Electric Corporation, Japan * Saga University, Japan Otsuka.Tomohiro-bp.MitsubishiElectric.co.jp output signal and includes variation of drain cu

Proceedings of the 16th European Microwave Integrated Circuits Conference Design Methodology of Wide Tuning Range DGSbased VCO for K-band Applications in 0.18-µm CMOS Technology Baichuan Chen# , Samundra K. Thapa#, Nusrat Jahan*, Adel Barakat#, Ramesh K. Pokharel# # Faculty of Information Science and Electrical Engineering, Kyushu University, Japan Department of Electrical and Electronic Enginee

Proceedings of the 16th European Microwave Integrated Circuits Conference Trap Characterization in InAlN/GaN and AlN/GaN based HEMTs with Fe- and C-doped Buffers Emmanuel Dupouy, P. Vigneshwara Raja, Florent Gaillard, Raphaël Sommet, Jean-Christophe Nallatamby XLIM Laboratory, CNRS UMR 7252, University of Limoges, France raphael.sommet-xlim.fr, jean-christophe.nallatamby-unilim.fr such high conce

Proceedings of the 16th European Microwave Integrated Circuits Conference A 14.6 GHz ? 19.2 GHz Digitally Controlled Injection Locked Frequency Doubler in 45 nm SOI CMOS Olli Kursu, Timo Rahkonen, Aarno Pärssinen University of Oulu, Faculty of Information Technology and Electrical Engineering (ITEE), Finland firstname.lastname-oulu.fi Abstract ? In this paper we present a wide locking range (14.

Proceedings of the 16th European Microwave Integrated Circuits Conference A 25-50 GHz Digitally Controlled Phase-Shifter Steeven Voisin #*, Vincent Knopik*, Eric Kerhervé# # IMS Laboratory, Univ. Bordeaux INP, France * STMicroelectronics, Crolles, France steeven.voisin-st.com Abstract ? This paper presents the design and the implementation of a phase shifter based on cascaded reflection type ph

Proceedings of the 16th European Microwave Integrated Circuits Conference Output Power Limited Rugged GaN LNA MMIC Evelyne Kaule#1 , Cristina Andrei# , Matthias Rudolph#* # Brandenburg University of Technology Cottbus-Senftenberg (BTU), Cottbus, Germany Ulrich-L.-Rohde Chair for RF and Microwave Techniques * Ferdinand-Braun-Institut gGmbH, Leibniz-Institut f¨ ur H¨ochstfrequenztechnik (FBH), Ber

Proceedings of the 16th European Microwave Integrated Circuits Conference A 27dBm Ku-Band SiGe Power Amplifier Working up to 90°C with High Robustness to the 2:1 SWR B. Coquillas1,2, E. Kerhervé1, S. Redois3, AC. Amiaud2, L. Roussel2, B. Louis3, E. Itcia3, T. Merlet2 1 IMS Laboratory, University of Bordeaux, CNRS UMR 5218, France 2 THALES LAS, France 3 THALES DMS, France benjamin.coquillas-ims-b

Proceedings of the 16th European Microwave Integrated Circuits Conference A 26 GHz to 34 GHz Active Phase Shifter with Tunable Polyphase Filter for 5G Wireless Systems Alok Sethi, Rehman Akbar, Mikko Hietanen, Timo Rahkonen, Aarno P¨arssinen University of Oulu, Finland {firstname.lastname}-oulu.fi Abstract ? This paper presents a vector summing Active Phase Shifter (APS) for 5G and 6G wireless s

Proceedings of the 16th European Microwave Integrated Circuits Conference 44 dBm Output Power and High Gain K-band GaN Power Amplifier for Satellite Communication Takuma Torii , Yoshifumi Kawamura, Eigo Kuwata, Masaomi Tsuru Information Technology R&D Center, Mitsubishi Electric Corporation Ofuna 5-1-1, 247-8501 Kamakura, Japan Torii.Takuma-dr.MitsubishiElectric.co.jp Abstract ? This paper presen